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    DSAEDA000123608.pdf by IXYS

    • Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE(sat) ≤ 3.2V IXBH20N300 IXBT20N300 TO-247 (IXBH)
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