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    DSAUTAZ00292.pdf

    • Hewlett-Packard
    • Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low
    • Original
    • Part pricing, stock, data attributes from Findchips.com

    DSAUTAZ00292.pdf preview Download Datasheet

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    ATF SOT ATF-10136 ATF-21186 ATF-26884 ATF-34143 ATF-44101 ATF10236
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