DSAZIHA1000107222.pdf by Honeywell

Partial File Text HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features n F abricated on S150 Silicon On Insulator (SOI) CMOS Underlayer Technology n 1 50 nm Process n
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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