DSAUD0071417.pdf by International Rectifier

Partial File Text PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features · Low VCE (on) Non Punch Through IGBT Technology. · Low Diode VF. · 10µs Short Cir
Datasheet Type Original
RoHS No
Pb Free Unknown
Lifecycle Transferred
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IRGB5B120KDPBF

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IRGB5B120KDPBF TO-220aB rr

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