DSAUD0071417.pdf
by International Rectifier
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PD - 95617
IRGB5B120KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
· Low VCE (on) Non Punch Through IGBT Technology.
· Low Diode VF.
· 10µs Short Cir
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Original
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Yes
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Yes
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Transferred
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