DSA00372104.pdf by Hitachi Semiconductor

Partial File Text 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389 1st. Edition Application UHF / VHF RF amplifier Features · Low noise figure. NF = 1.0 dB typ. at f = 200 MHz · Capable of low volt
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Transferred
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3SK297

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