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    DSA2IH0062202.pdf

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    • 2} H a rris August 1991 RFL1N18 RFL1N20 N-Channel Enhancem ent-M ode Power Field-Effect Transistors F eatures · 1A, 180V and 200V · rQs(on) = 3.65ft · S O A is Power-Dissipation Limited · Nan
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