DSA00504150.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM3742-4SL-341 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=36.5dBm at 3.3GHz to 3.6GHz
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RoHS Unknown
Pb Free Unknown
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TIM3742-4SL-341