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    DSA00260182.pdf

    • Fujitsu
    • FLL410IK-3C L-Band High Power GaAs FET FEATURES High Output Power: Pout=46.0dBm(Typ.) High Gain: GL=13.0dB(Typ.) High PAE: add=52%(Typ.) Broad Band: 2.5~2.7GHz Hermetically Sealed Package DESC
    • Original
    • Part pricing, stock, data attributes from Findchips.com

    DSA00260182.pdf preview Download Datasheet

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    ED-4701 FLL410IK-3C fujitsu gaas fet fujitsu gaas fet L-band fujitsu GHz gaas fet Fujitsu Quantum Devices
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