DSAASSA0004580.pdf by Toshiba

Partial File Text TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Elect
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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P-TFBGA63-0911-0 TC58NVG0S3EBA TC58NYG0S TC58NYG0S3E TC58NYG0S3EBAI4

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