DSA2IH0063817.pdf by Not Available

Partial File Text m a r r is A ugust 1995 Features · Radiation Hardened - Total Dose >105 RAD (Si) - Transient Upset > 108 RAD (Si)/s - Latch Up Free EPI-CMOS · Low Power Consumption - IDDSB = 50[iA Maximum - IDDOP
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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