E 102H transistor
Abstract: 2SC 3205 TRANSISTOR 2Sc 3205 ML100 SOP32 525mil CE-70
Text: I Ordering number : EN3K4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC33864 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized
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ENiX-4701
LC33864P,
ML-70/80/10
LC33864
32-pin
450mil)
li-11-
OP28D
E 102H transistor
2SC 3205
TRANSISTOR 2Sc 3205
ML100
SOP32 525mil
CE-70
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Untitled
Abstract: No abstract text available
Text: HM62D3232 Series 32768-word x 32-bit Synchronous Fast Static RAM with Burst Counter and Pipelined Data Output HITACHI ADE-203-491A Z Rev. 1.0 Jun. 24, 1996 Features • • • • • • • • • • • • • • Single 3.3 Y power supply (LYTTL)
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HM62D3232
32768-word
32-bit
ADE-203-491A
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N4990
Abstract: mz52 zener N4987 100S 1N4954 1N4996 IMZ5891 MZ5210 MZ5240 MZ5806
Text: ITTIHÌM 1 N 4 9 5 4 - 1N4996 M Z5806 - IMZ5891, MZ5210 - M Z5240 Microsemi Corp. 5-WATT GLASS ZENER DIODES FEATURES • • • • • • • M icrom iniature package. Voidless herm etically sealed glass package. Triple layer passivation. M etallurgically bonded.
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1N4954-1N4996
MZ5806
IMZ5891,
MZ5210
MZ5240
MIL-S-19500/356.
N4990*
MZ5222
1N4991*
MZ5224
N4990
mz52 zener
N4987
100S
1N4954
1N4996
IMZ5891
MZ5240
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MC9RS08KA2 serial communications
Abstract: MC9RS08KA2 MC9RS08KA2 serial communication c code DEMO9RS08KA2 AN3317 RS08 RS08 c code example freescale spc
Text: Freescale Semiconductor Application Note Document Number: AN3317 Rev. 0, 10/2006 IIC Master on the MC9RS08KA2 by: Inga Harris East Kilbride, Scotland 1 Introduction The IIC inter-integrated circuit protocol is a 2-wire serial communication interface implemented in
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AN3317
MC9RS08KA2
MC9RS08KA2 serial communications
MC9RS08KA2
MC9RS08KA2 serial communication c code
DEMO9RS08KA2
AN3317
RS08
RS08 c code example
freescale spc
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VM VTC 24-lead
Abstract: No abstract text available
Text: VM 71110 ^ ¿ ê é V T C In c. 4, 6, 8 OR 10-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER FE A T U R E S CO N N ECTIO N DIAGRAMS Va/ue the C ustom er August, 1995 • High Performance - Read Gain = 200 or 300 V/V - Input Noise = 0.5nV/VHz Typical
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10-CHANNEL,
VM VTC 24-lead
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in5349b
Abstract: IN5339B IN5378B IN5343b in5364B in5378b ZENER DIODE IN5358B IN5378 IN5339B diode IN5357B
Text: ITTIMK-J 1N5333B Microsemi Corp. 1N5388B th ru SILICON 5 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT C A P A B IL IT Y • AVAILABLE IN ± 5, ± 10 or ± 2 0 % TOLERANCES Note 1 MAXIMUM RATINGS O perating T em perature: —65°C to + 2 0 0 °C
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1N5333B
1N5388B
in5349b
IN5339B
IN5378B
IN5343b
in5364B
in5378b ZENER DIODE
IN5358B
IN5378
IN5339B diode
IN5357B
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AC050
Abstract: NEC C141 c141 nec st c049 PB6310 123Ln AC044 ga01 AC041 C102 M 346
Text: N E C ELECTRONICS INC "?5 SEC DÌJ bME7SSS 000fi233 t. J"' T-42-11-13 //P B 6 3 0 0 100K S E R IES BIPO LA R E C L -2 GATE ARRAYS NEC Electronics Inc. M arch 1985 Revision 1 Description ¿fPB6301 Specifications_ T h e //PB6300 (100K) se rie s c o n sists of three ultrah igh -sp e e d E C L gate arrays, com patible with an E C L 10 0 K interface. Respectively, the ¿/PB6301, //PB6310,
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000fi233
T-42-11-13
uPB6300
ECL100K
/PB6301,
//PB6310,
//PB6320
83-0009MA
132-Pin
3-000743A
AC050
NEC C141
c141 nec
st c049
PB6310
123Ln
AC044
ga01
AC041
C102 M 346
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN6086 CMOS 1C LC75884E, LC75884W 1/4 Duty LCD Display Drivers with Key Input Function H H Overview Package Dimensions T he L C 75884E and L C 75884W are 1/4 duty LC D display unit: mm drivers that can directly drive up to 220 segments and can
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EN6086
LC75884E,
LC75884W
75884E
5884W
QFP80E
LC75884E]
711707b
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PDF
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Untitled
Abstract: No abstract text available
Text: r Z 7 S G S -T H O M S O N ^ 7 # 5MŒ HHi TT!FM0©S BD135 B D137-BD139 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD135, BD137, BD139 are silicon epitaxial pla nar NPN transistors in Jedec TO-126 plastic package, designed for audio amplifiers and drivers
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BD135
D137-BD139
BD135,
BD137,
BD139
O-126
BD136,
BD138
BD140
BD135Voltage
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m50740
Abstract: MELPS 740 "SERIES MELPS 740" SERIES MELPS 740 SOFTWARE USERS MANUAL M50734SP SERIES MELPS 740 USERS MANUAL m37450 SERIES MELPS 740 M50741 M50740A-XXXSP
Text: FOREWORD This software manual is for users of the MELPS 740 series. Register structure, addressing mode and instructions are introduced in each section. The enhanced instruction set with enhanced data and memory operations enable efficient programming. Please refer to the “USER'S MANUAL”
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M37450
m50740
MELPS 740
"SERIES MELPS 740"
SERIES MELPS 740 SOFTWARE USERS MANUAL
M50734SP
SERIES MELPS 740 USERS MANUAL
SERIES MELPS 740
M50741
M50740A-XXXSP
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IN2621
Abstract: IN4773 1N2621A Zener C212 IN4772 IN4773A IN537 1n764a 1N29B 1N2169A
Text: TEX/ SEflIT R O N IC S CORP^ 27E I> • MAbTEm, 0DD0314 4 ■ semitron hot iine -r-n - 01 - T ' H - II TOLL FREE NUMBER 800-777-3960 discrete devices silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt m T 1N42# 1N1735 Norn.
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OODD314
1N429
1N1735
1N430
1N430A
1N821
1N821A
1N823
1N823A
1N824
IN2621
IN4773
1N2621A
Zener C212
IN4772
IN4773A
IN537
1n764a
1N29B
1N2169A
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Transistor C 1279
Abstract: 2SC1279 2SC127 C1279 MA177
Text: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION 2S C 127 9 D The 2SC 1279 is designed fo r use high voltage switching ap plication. FEATURES • High Breakdown Voltage 2 B V cbo : 180 V ABSOLUTE M AXIM U M RATINGS Maximum Temperatures Storage Tem perature. -5 5 to +125 °C
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transistors BC 543
Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
Text: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,
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Q62702-D1303
Q62702-D13Q4
Q62702-D1179
Q62702-D1257
Q62702-D1307
Q62702-D1308
Q62702-D61
Q62702-D1312
Q62702-D1313
Q62702-D1238
transistors BC 543
BD 104 NPN
BC827
BD 104
transistors d 826
bc 734
82s83
BC 828
BD 541
bc825
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA TO DE § ÌCH7E5D DDltD7M 7 f~ <D I S C R E T E / O P T O 90D SEMICONDUCTOR 16074 U T - 3 3 -35' TOSHIBA GTR MODULE M G 7 5 M 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.
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16108 fp
Abstract: HA16107FP 16108 HA16108FP ha16107p HA16107F equivalent for ic ha16107p
Text: HA16107FP/P, HA16108FP/P 600kHz PWM Switching Regulator Controller Description HA16107P, HA16108P The HA 16107 and HA 16108 series are prim ary control sw itching regulator control IC ’s appropriate for d i rectly obtaining stable voltage from com m ercial and
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HA16107FP/P,
HA16108FP/P
600kHz
16108 fp
HA16107FP
16108
HA16108FP
ha16107p
HA16107F
equivalent for ic ha16107p
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SP0256-AL2
Abstract: SPO256 SPR016 gg2j Radio Shack spr016 sp0256al2 tandy spr016 SP0256 sound phase checker SPO-256
Text: r a ï b a c k D oc. # 17517 Catalog Number 276-1784 TECHNICAL DATA AN EXCLUSIVE RADIO SHACK SERVICE TO THE EXPERIMENTER SP0256 NARRATO R SPEECH PROCESSOR Features Tim • • * • * * • RÔM D VDD C 7 S&Y c 6 DS^C 9 w c ■0 A7 c I Stfl OUT c 12 AÔC l ì
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SP0256
SP0256
290MS
250MS
160MS
280MS
300MS
240MS
100MS
240M5
SP0256-AL2
SPO256
SPR016
gg2j
Radio Shack spr016
sp0256al2
tandy spr016
sound phase checker
SPO-256
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VM7200
Abstract: No abstract text available
Text: V T C Inc. Value the Customer VM7200 2, 4, 6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER TWO/THREE TERMINAL & SERVO PREAMPLIFIERS July, 1993 FEATURES • High Performance - Read Gain = 200 V /V Typical - Input Noise = 0.75nV/VHz max - Head Inductance Range = 0.2 -1 0 |j H
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VM7200
75nV/VHz
10OmV,
10MHz
100mV,
VM7200
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PDF
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LTE-3375
Abstract: No abstract text available
Text: - I I T P r à l^ l Ll 1 k1 GaAlAs T-l 3/4 STANDARD 5 <p HIGHSPEED INFRARED EMITTING DIODE LTE-3375/LTE-3376 FEATURE • LTE-3376 IrDA C om p atiable • Special for high current and low forw ard voltage •H igh power •A va ilable for pulse operating
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LTE-3375/LTE-3376
LTE-3376
-3375/LT
LTE-3375
LTE-3375
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SC4905-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz 1. Emitter
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2SC4905
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DE-150
Abstract: z diode 14a
Text: 2849995 DIRECTED ENERGY I NC ~~T7 97D 00006 D eT| 20 4=1^5 □□□ODOfc, 3 J “ DE-150 SERIES □ DATA SHEET DIRECTED ENERGY, INC. DE-150 10IN14 SPECIFICATIONS PULSED POWER COMPONENTS AND SYSTEMS The Centre for Advanced Technology 2301 Research Blvd., Suile 101
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DE-150
10IN14
-J-35TI
z diode 14a
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PDF
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BM11129
Abstract: TMP95CW64 TMP95PW64 TMP95PW64F toshiba psram
Text: TOSHIBA TOSHIBA O riginal CMOS 16-Bit M icro co n tro ller TLCS-900/H Series TMP95PW64 TO SHIBA CORPORATION Preface T h an k you very much fo r m aking use o f Toshiba m icrocom puter LSIs. Before use this LSI, refer th e s e c tio n ," Points o f N o te and Restrictions".
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16-Bit
TLCS-900/H
TMP95PW64
95PW64-25
95PW64-26
BM11129
TMP95CW64
TMP95PW64
TMP95PW64F
toshiba psram
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PDF
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mosfet 2sk
Abstract: 2SK962-01 SC-65 T151 nycor 2sk mosfet
Text: 2SK962-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II • Features S E R I E S lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V USS= ± 3 0V Guarantee • Avalanche-proof
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2SK962-01
SC-65
mosfet 2sk
2SK962-01
SC-65
T151
nycor
2sk mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50VSJ-2 HIGH-SPEED SWITCHING USE FS50VSJ-02 OUTLINE DRAWING Dimensions in mm .4.5 . 1.3 • 4V DRIVE • VDSS . •100V • rDS ON (MAX) .
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FS50VSJ-2
FS50VSJ-02
O-220S
50jiH
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PDF
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27l diode
Abstract: No abstract text available
Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER FEATURES PS2802-1 PS2802-4 DESCRIPTION PS2802-1 and PS2802-4 are optically coupled isolators con taining a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor in a plastic SOP Small
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PS2802-1
PS2802-4
PS2802-4
PS2802-1-F3,
PS2802-4-F3
PS2802-1,
27l diode
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