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Diodes Incorporated ZXMP3F35N8TA MOSFET P-CH 30V 9.3A 8SO
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ZXMP3F35N8 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ZXMP3F35N8		Diodes	30V SO8 P-channel enhancement mode MOSFET		Original	PDF
ZXMP3F35N8TA		Zetex Semiconductors	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 9.3A 8SO		Original	PDF

ZXMP3F35N8 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
design ideas Abstract: TS16949 ZXMP3F35N8 ZXMP3F35N8TA 3f35 PF6000 Text: ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for battery	Original	ZXMP3F35N8 ZXMP3F35N8TA D-81541 TX75248, design ideas TS16949 ZXMP3F35N8 ZXMP3F35N8TA 3f35 PF6000	PDF
Untitled Abstract: No abstract text available Text: ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for battery	Original	ZXMP3F35N8 ZXMP3F35N8TA D-81541 TX75248,	PDF
ZXMP3F35N8 Abstract: 3f35 TS16949 ZXMP3F35N8TA PF6000 Text: ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for battery	Original	ZXMP3F35N8 ZXMP3F35N8TA D-81541 TX75248, ZXMP3F35N8 3f35 TS16949 ZXMP3F35N8TA PF6000	PDF
Untitled Abstract: No abstract text available Text: DISCONTINUED ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for battery	Original	ZXMP3F35N8 ZXMP3F35N8TA D-81541 TX75248,	PDF
CAT7105CA Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A	Original	5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al	PDF
DMG1012 Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8 Text: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS	Original	A1103-04, DMG1012 ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8	PDF
Untitled Abstract: No abstract text available Text: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being	Original	ZXMN2B14FHÂ ZXMN2F30FHÂ ZXMN2F34FHÂ ZXMN3A01FÂ ZXMN3A02N8Â ZXMN3A04DN8Â ZXMN3A06DN8Â ZXMN3A14FÂ ZXMN3B01FÂ ZXMN3B04N8Â	PDF
GE1030 Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6 Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds	Original	DCS/PCN-1119 PCN-1119 OT223, OD323, OD523, OT323, OT23-6, OT23-5 GE1030MOT223 ZXTP2014GTC GE1030 FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6	PDF
AP3039AM Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)	Original	2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502	PDF
Untitled Abstract: No abstract text available Text: DATE: 25th April, 2013 PCN #: 2102 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.	Original	GBJ2508 DDTB123EKâ DDTB123ECâ DDTD123TKâ DDTD123TCâ GBPC2510* GBJ2510 DDTB123TKâ DDTB123TCâ DDTD123YKâ	PDF
zxczm800 Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)	Original	2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA	PDF