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    ZXMN6A09DN8TA Price and Stock

    Diodes Incorporated ZXMN6A09DN8TA

    MOSFET 2N-CH 60V 4.3A 8SO
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    ZXMN6A09DN8TA Cut Tape 7,942 1
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    ZXMN6A09DN8TA Reel 7,500 500
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    Avnet Americas ZXMN6A09DN8TA Reel 8 Weeks 500
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    Mouser Electronics ZXMN6A09DN8TA 1,106
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    Newark ZXMN6A09DN8TA Cut Tape 459 1
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    Future Electronics ZXMN6A09DN8TA Reel 8 Weeks 500
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    Avnet Asia ZXMN6A09DN8TA 16 Weeks 500
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    New Advantage Corporation ZXMN6A09DN8TA 1,000 1
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    Zetex / Diodes Inc ZXMN6A09DN8TA

    IN STOCK SHIP TODAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Component Electronics, Inc ZXMN6A09DN8TA 245
    • 1 $6.15
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    • 100 $4.62
    • 1000 $4
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    ZXMN6A09DN8TA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN6A09DN8TA Zetex Semiconductors DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

    ZXMN6A09DN8TA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TS16949

    Abstract: ZXMN6A09DN8 ZXMN6A09DN8TA
    Text: ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.040 @ VGS= 10V 5.6 0.060 @ VGS= 4.5V 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast


    Original     		PDF ZXMN6A09DN8 D-81541 TS16949 ZXMN6A09DN8 ZXMN6A09DN8TA

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.040 @ VGS= 10V 5.6 0.060 @ VGS= 4.5V 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast


    Original     		PDF ZXMN6A09DN8 D-81541

    d51a

    Abstract: No abstract text available
    Text: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC d51a

    ZXMN6A09DN8

    Abstract: ZXMN6A09DN8TA ZXMN6A09DN8TC
    Text: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC

    ZXMN6A09DN8

    Abstract: ZXMN6A09DN8TA ZXMN6A09DN8TC
    Text: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,


    Original     		PDF ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC

    GE1030

    Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
    Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds


    Original     		PDF DCS/PCN-1119 PCN-1119 OT223, OD323, OD523, OT323, OT23-6, OT23-5 GE1030MOT223 ZXTP2014GTC GE1030 FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6

    D51A

    Abstract: 51A SOIC ZXMN6A09DN8TA diode 1407
    Text: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC D51A 51A SOIC diode 1407

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    AEC-Q101

    Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
    Text: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC


    Original     		PDF AEC-Q100/AEC-Q101 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q AEC-Q101 AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA