1SAM
Abstract: No abstract text available
Text: ZVP2120Z SOT89 P CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET * PARTMARKING DETAIL - P10 FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVP2120G DATASHEET ABSOLUTE M AXIM UM RATINGS PARAMETER SYM BOL » VALUE ' UNIT -200 -0.17 -1.2 Drain-Source Voltage Continuous Drain Current @ Tamb=25°C
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ZVP2120G
ZVP2120Z
TamtF25
-150mA,
-150mA
1SAM
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Diode Mark N10
Abstract: BZV49 diode GF M
Text: SOT89 NPN SWITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter V CE sa O Max h -E Type v CBO v CEO ^C(cont P lo t V V mA W FCX2369A 40 15 500 1.0 40/120 FCX2369 40 15 500 1.0 40/120 M in/M ax at lc / V ce m A / Volts Part Mark Code Volts at l c / Iß
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FCX2369A
FCX2369
BZV49
BAW79D
BAW79C
BAW79B
BAW79A
200mA,
BAW78D
BAW78C
Diode Mark N10
diode GF M
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BAW78C
Abstract: No abstract text available
Text: SOT89 NPN SW ITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter Type hFE VcBO V VCEO V lc cont mA P to t FCX2369A 40 15 500 FCX2369 40 15 500 Part Mark Code v CE(sat) M a x M in/M ax at lc / VCE m A / Volts Volts at lc / lB mA 1.0 40/120 10/1 0.2
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FCX2369A
FCX2369
BZV49
ZVN2120Z
ZVNL120Z
BST86
ZVN2106Z
ZVN4206Z
ZVP2120Z
ZVP2106Z
BAW78C
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