Untitled
Abstract: No abstract text available
Text: ZVP2106Z Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)390m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)-55
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ZVP2106Z
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Untitled
Abstract: No abstract text available
Text: ZVP2106Z SOT89 P CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * PARTMARKING DETAIL - ZVP2106Z - P16 FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVP2106G DATASHEET. ABSOLUTE M AXIM UM RATINGS PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current @ Tamb=25 C
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ZVP2106Z
ZVP2106G
ZVP2106Z
300us,
DS394
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Untitled
Abstract: No abstract text available
Text: SOT89 P CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106Z FEATU RES * PARTM ARKIN G D E T A IL -Z V P 2 1 0 6 Z -P 1 6 FOR T Y P IC A L C H A R A C T E R IS T IC S G R A P H S S E E ZVP2106G D A TA SH EET. ABSOLUTE MAXIMUM RATINGS SYM BOL PARAMETER Drain-Source Voltage
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ZVP2106G
ZVP2106Z
-500m
-500mA
-500mA
DS394
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Diode Mark N10
Abstract: BZV49 diode GF M
Text: SOT89 NPN SWITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter V CE sa O Max h -E Type v CBO v CEO ^C(cont P lo t V V mA W FCX2369A 40 15 500 1.0 40/120 FCX2369 40 15 500 1.0 40/120 M in/M ax at lc / V ce m A / Volts Part Mark Code Volts at l c / Iß
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FCX2369A
FCX2369
BZV49
BAW79D
BAW79C
BAW79B
BAW79A
200mA,
BAW78D
BAW78C
Diode Mark N10
diode GF M
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BAW78C
Abstract: No abstract text available
Text: SOT89 NPN SW ITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter Type hFE VcBO V VCEO V lc cont mA P to t FCX2369A 40 15 500 FCX2369 40 15 500 Part Mark Code v CE(sat) M a x M in/M ax at lc / VCE m A / Volts Volts at lc / lB mA 1.0 40/120 10/1 0.2
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FCX2369A
FCX2369
BZV49
ZVN2120Z
ZVNL120Z
BST86
ZVN2106Z
ZVN4206Z
ZVP2120Z
ZVP2106Z
BAW78C
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