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Abstract: No abstract text available
Text: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2106G ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS on =2Ω D S COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVP2106G ZVN2106 D G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e
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OT223
ZVN2106G
ZVP2106G
ZVN2106
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ZVN2106
Abstract: ZVN2106 equivalent zvn2106 sot223 ZVP2106G ZVN2106G DSA003735
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2106G ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS on =2Ω VGS= 10V 9V 3 8V 7V 2 6V 5V 1 4V 3V 1 2 3 4 VDD= 20V 30V 50V 16 VGS-Gate Source Voltage (Volts) ID(On) -On-State Drain Current (Amps)
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OT223
ZVN2106G
ZVP2106G
ZVN2106
ZVN2106
ZVN2106 equivalent
zvn2106 sot223
ZVP2106G
ZVN2106G
DSA003735
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ZVN2106
Abstract: ZVN2106G ZVP2106G DS360
Text: SOT223 N CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET FEATURES. 8A PU LSE DRAIN CURRENT. FAST SWITCHING SPEED. EXCELLENT TEM PERATURE STABILITY. HIGH INPUT IMPEDANCE. C O MPLEMENTARY TYPE - ZVP2106G. PARTMARKING DETAIL - ZVN2106 ABSOLUTE M A XIM U M RATINGS
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OT223
ZVP2106G.
ZVN2106
ZVN2106G
OS36T
ZVN2106G
ZVP2106G
DS360
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ZVN2106
Abstract: ZVN2106A ZVN2106B diode 2U 66 diode 2U 14 F-117 F-118 ZVN2106E ZVN2106G F117
Text: büE D • TÏ7D57Û I ZETEX N-channel enhancement mode vertical DMOS FET DDDVan 721 SEMICONDUCTORS ZVN 2106 FEATURES • C om pact geom etry • Fast s w itc h in g speeds • No secondary breakdow n • Excellent te m p e ra tu re sta b ility • High in p u t im pedance
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ZVN2106
ZVN2106A*
ZVN2106B*
ZVN2106E
F-122
n70S7fi
F-123
00078Eb
ZVN2106
ZVN2106A
ZVN2106B
diode 2U 66
diode 2U 14
F-117
F-118
ZVN2106G
F117
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