ZUA15
Abstract: ZUA12
Text: HM62W1400H Series 4194304-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203-773 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W1400H is an asyncronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed circuit
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HM62W1400H
4194304-word
ADE-203-773
400-mil
32-pin
ns/12
ns/15
D-85622
ZUA15
ZUA12
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Untitled
Abstract: No abstract text available
Text: HM62W4100H Series 1048576-word X 4-bit High Speed CMOS Static RAM HITACHI ADE-203-774 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 )im CMOS process and high speed
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HM62W4100H
1048576-word
ADE-203-774
400-mil
32-pin
ns/12
ns/15
HM62W4X00H
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Untitled
Abstract: No abstract text available
Text: » H Y U N D A I H Y 2 9 F 0 4 0 S e r i e s ” 1 W 11 11 * 1 1 512K X 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory PRELIMINARY DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512K x 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1
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HY29F040
0G0b407
1FA02-01-MAY95
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Untitled
Abstract: No abstract text available
Text: HN58V1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-314F Z Rev. 6.0 Apr. 30,1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
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HN58V1001
131072-word
ADE-203-314F
128-byte
HN58V1001R
TFP-32DAR)
FP-32D,
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