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    ZS102 DIODE Search Results

    ZS102 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ZS102 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZS106

    Abstract: ZS108 zs100 low leakage diodes ZS102 c643
    Text: A X I A L DIODES SILICON DIFFUSED JUNCTION DIODES The ZS100 and ZS120 series o f diffused junction D 07 glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 4 0 0 m A and 25 0m A respectively.


    OCR Scan     		PDF ZS100 ZS120 ZS120 ZS101 ZS121 ZS102 ZS122 ZS106 ZS108 low leakage diodes c643

    ZS106

    Abstract: zs102 diode ZS102 250mA ZS10B ZS100 ZS101 ZS103 ZS104 ZS108
    Text: GENERAL PURPOSE DIODES TABLE 3 - SILICO N DIFFUSED JUNCTION DIO DES The ZS100 and ZS120 series of diffused junction glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 400m A and 250m A


    OCR Scan     		PDF ZS100 ZS120 400mA 250mA ZS101 ZS102 ZS103 ZS104 ZS106 zs102 diode ZS10B ZS108

    ZS90

    Abstract: ZS92 2S150 KS78B diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131
    Text: SILICON DIODES Very Low Leakage Planar Epitaxial Characteristics M axim um Ratings Type No. Mean Rectified Current at 75°C V RWM 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 Surge C urrent fo r 5 mS. A Max. Reverse Current at V r ^ M at 25°C nA 250 250 250 250 250


    OCR Scan     		PDF 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 100mA. KS77B KS78B ZS90 ZS92 diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131

    ZS150

    Abstract: ZS102 C642 diode zs104 ZS100 ZS101 ZS103 ZS104 ZS106 ZS108
    Text: AXIAL DIODES SILICON DIFFUSED JUNCTION DIODES The ZS100 and ZS120 series of diffused junction D07 glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 400m A and 250m A respectively.


    OCR Scan     		PDF ZS100 ZS120 400mA 250mA ZS101 ZS102 ZS103 ZS104 ZS150 C642 diode zs104 ZS106 ZS108

    ZS150

    Abstract: CECC 50001-057 BS9300 ZS100 ZS102 ZS151 ZS104 ZS122 ZS101 ZS106
    Text: SbE D • 'HTOSTfl G 0 0 7 02 7 540 ■ Z E T B AXIAL DIODES ZETEX S E M I C O N D U C T O R S I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to


    OCR Scan     		PDF G007027 ZS100 ZS120 ZS101 ZS102 ZS103 ZS104 ZS106 ZS150 CECC 50001-057 BS9300 ZS151 ZS122

    diode zs104

    Abstract: zs102 diode ZS120
    Text: SbE D • 'HTOSTfl G007027 540 ■ Z E T B AXIAL DIODES ZETEX SEMICONDUCTORS I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to


    OCR Scan     		PDF G007027 ZS100 ZS101 ZS102 ZS103 ZS104 ZS106 ZS108 ZS120 ZS121 diode zs104 zs102 diode ZS120

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


    OCR Scan     		PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan     		PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d