RF TRANSISTOR
Abstract: Z0-28F ZO-28 injector zo-28f Z0-28 ZO-28/F z0-28/f RF power transistors 3000 BIAS Power Technology
Text: ZO-28/F BIAS DEVICE Thermal Tracking CASE OUTLINE GENERAL DESCRIPTION 55GU The ZO-28/F is a bias device designed to work with very high power BiPolar transistors, operating Class A and AB. It has extremely low source impedance and high current handling capability. The package may be physically mounted
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ZO-28/F
ZO-28/F
Z0-28
Z0-28.
RF TRANSISTOR
Z0-28F
ZO-28
injector
zo-28f
z0-28/f
RF power transistors 3000
BIAS Power Technology
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injector
Abstract: zo28f ZO-28F power injector 55GU ZO-28
Text: ZO-28/F BIAS DEVICE Thermal Tracking CASE OUTLINE GENERAL DESCRIPTION 55GU The ZO-28/F is a bias device designed to work with very high power BiPolar transistors, operating Class A and AB. It has extremely low source impedance and high current handling capability. The package may be physically mounted
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ZO-28/F
ZO-28/F
injector
zo28f
ZO-28F
power injector
55GU
ZO-28
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DIODE NETWORKS
Abstract: schottky diode
Text: Application Notes Introduction to Schottky Diode Networks Zo ESD D Technical advances in the electronics industry, particularly in today’s hand-held and portable communication products, has resulted in faster and much more complex semiconductor devices and systems. In this rapidly changing environment,
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MURD310
Abstract: MURD305 MURD315 MURD320 motorola dpak 305
Text: IMOTOROLA m SEMICONDUCTOR TECHNICAL DATA Switehmode Power MURD305 MuRD3~o MURD345~?’t$ , MURQ~zO ,+,‘Q3 Z? Rectifiers DPAK Surface Mount Package .designed these for use in switching state-of-the-art @ Ultrafast devices 35 Nanosecond @ Low Forward
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MURD305
MURD345
81akelands
MK145BP,
MURD310
MURD315
MURD320
MURD310
MURD305
MURD315
MURD320
motorola dpak 305
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AN829 "cross reference"
Abstract: AN-829
Text: THE PHYSICS OF THE BACKPLANE BUS For high-speed bus signals where the signal rise and fall times are less than the round-trip delay, the bus acts as a transmission line with an associated characteristic impedance and propagation delay whose unloaded values, Zo and
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AN011457-1
an011457
AN829 "cross reference"
AN-829
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qml-38535
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 89-11-15 M. A. FRYE 92-12-08 M. A. FRYE 09-02-04 R. HEBER Table I: Exclude VIO and VIO / temp from PDA. Guarantee, if not tested, en and in at fO = 100 Hz. Delete subgroups 2 and 3 for IOS. Change ZO to RO
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5962-R321-92.
qml-38535
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Untitled
Abstract: No abstract text available
Text: SKNa 4 Stud Diode Avalanche Diode SKNa 4 7IPQN=1 ?OQB@ S 46 $ I=&T1=2= %&'2+ :3/ 3(,1(2320 3.+/&,13(N H=&T Q=1( 7 4W66 ?O$7 S C $ I01(M 4U6V 8& S WX YHN @DE& C¥4W ZO [ 4566 @DE& C¥45 Symbol Conditions Values Units ?O$7 01(M 4U6V 8& S CX IUXN YH WL5 I]L^N
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Military Linear Products Wideband high frequency amplifier 5205 DESCRIPTION FEATURES • 600MHz bandwidth • 20dB insertion gain • 4.8dB 6 dB noise figure Zo = 7 5 ÎÏ (Zo = 50£2) • No external components required
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600MHz
50/75Q
450MHz,
600MHz.
7110flS
DG6S23Û
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in4728
Abstract: in4764 bs9305 IN371 Z0B0.7 IN4628 IN4400 Z0B11 Z0B12 Z0B15
Text: Voltage Regulator Diodes Z4 Series ZO Series Electrical characteristics at 25°C Type Z0B0.7 Z0B1.4 Z0B2.0 Z0B2.2 Z0B2.4 Z0B2.7 Z0B3.0 Z0B3.3 Z0B3.6 Z0B3.9 Z0B4.3 Z0B4.7 Z0B5.1 Z0B5.6 Z0B6.2 Z0B6.8 Z0B7.5 Z0B8.2 Z0B9.1 Z0B10 Z0B11 Z0B12 Z0B13 Z0B15 Z0B16 Z0B18
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IN1875
IN1888
IN3016
IN3051
IN3537
IN3675
IN3710
IN3821
IN3830
IN4158
in4728
in4764
bs9305
IN371
Z0B0.7
IN4628
IN4400
Z0B11
Z0B12
Z0B15
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High-Frequency Wideband Power Transformers
Abstract: 130U noise diode
Text: Product specification Philips Semiconductors Military Linear Products Wideband high frequency amplifier 5205 DESCRIPTION FEATURES • 600MHz bandwidth • 20dB insertion gain • 4.8dB 6dB noise figure Zq = 75Q (Zo = 50£2) • No external components required
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600MHz
50/75Q
450MHz,
600MHz.
711002b
High-Frequency Wideband Power Transformers
130U
noise diode
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operational amplifier discrete schematic
Abstract: 1s21 diode ltls zo 103 ma 130U High-Frequency Wideband Power Transformers
Text: Product specification Philips Semiconductors Military Linear Products 5205 Wideband high frequency amplifier • 20dB insertion gain • 4.8dB 6dB noise figure Zq = 75Q (Zo = 50£2) • No external components required • Input and output impedances matched to
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600MHz
50/75Q
450MHz,
600MHz.
711002b
operational amplifier discrete schematic
1s21 diode
ltls
zo 103 ma
130U
High-Frequency Wideband Power Transformers
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in4728
Abstract: IN4158 in4764 IN4400 IN4193 104 Z4 z0b07 IN4358 Z0B11 Z0B12
Text: Z4 Series ZO Series 1W Voltage Regulator D iodes A range of medium power zener and avalanche diodes to BS 9305-F-078 in a hermetically sealed D029 glass package in both unipolar and bipolar con figurations. P max c o n t-
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9305-F-078
Psurge-400W;
IN1875
IN1888
IN3016
IN3051
IN3537
IN3675
IN3710
IN3821
in4728
IN4158
in4764
IN4400
IN4193
104 Z4
z0b07
IN4358
Z0B11
Z0B12
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in4728
Abstract: zener diode Z483 IN4158 zener diode Z487 104 Z4 Z4 13 Z4*13 z4810 Z4818 D029
Text: Z4 Series ZO Series 1W Voltage Regulator Diodes A range of medium power zener and avalanche diodes to BS 9305-F-078 in a hermetically sealed D029 glass package in both unipolar and bipolar con figurations. P max c o n t- 1W
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9305-F-078
Psurge-400W;
IN1875
IN1888
IN3016
IN3051
IN3537
IN3675
IN3710
IN3821
in4728
zener diode Z483
IN4158
zener diode Z487
104 Z4
Z4 13
Z4*13
z4810
Z4818
D029
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zener diode Z483
Abstract: IN3016 in4728 Z4818 Z4B10 Z4B11 Z4B12 Z4B13 Z4B15 Z4B16
Text: Z4 Series ZO Series Electrical characteristics at 25°C + 5% Voltage Toi Type Z4B3.0 Z4B3.3 Z4B3.6 Z4B3.9 Z4B4.3 Z4B4.7 Z4B5.1 Z4B5.6 Z4B6.2 Z4B6.8 Z4B7.5 Z4B8.2 Z4B9.1 Z4B10 Z4B11 Z4B12 Z4B13 Z4B15 Z4B16 Z4B18 Z4B20 Z4B22 Z4B24 Z4B27 Z4B30 Z4B33 Z4B36 Z4B39
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Z4B10
IN1875
IN1888
IN3016
IN3051
IN3537
IN3675
IN3710
IN3821
IN3830
zener diode Z483
in4728
Z4818
Z4B11
Z4B12
Z4B13
Z4B15
Z4B16
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Untitled
Abstract: No abstract text available
Text: ¿S — K/Diodes 1SR154-100/1SR154-200/1SR154-400 1SRI 54-100/1 SRI 54-200 1SRI 54-400 ->' a * - K Silicon Diffused Junction Rectifying Diodes • yWISVJSel/Dimensions Unit : mm) • & £ 1) 'mmnmz'fzfr’&z 2) (p s m )„ mmmn'&Zo n . CATHODE MARK • Features
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1SR154-100/1SR154-200/1SR154-400
1SR154-100
1SR154-200
1SR154-400
20154-200/1SR154-400
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Untitled
Abstract: No abstract text available
Text: ^ •i — K /D io d e s 1N4001 A/1 N4002A/1N4003A/1N4004A 1N4001A/1 N4002A/1N4003A/ 1N4004A -> < a <* - k Silicon Diffused Junction General Rectifying Diodes • W fi'+j& H l/D im en slo n s Unit : mm) 1) lL T '* S (JEDEC : DO- 41 )o 2) mmmx'&Zo 3) • Features
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1N4001
N4002A/1N4003A/1N4004A
1N4001A/1
N4002A/1N4003A/
1N4004A
1N4001A
1N4002A
1N4003A
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301L3
Abstract: max4290 FZJ 135
Text: FZJ SGS-THOMSON * 71 STV9378F VERTICAL DEFLECTION BOOSTER ADVANCE DATA • ■ ■ ■ ■ ■ POWER AMPLIFIER THERMAL PROTECTION OUTPUT CURRENTT U P TO ZO A pp FLYBACK VOLTAGE UP TO 90V on Pin 5 INTERNAL REFERENCE VOLTAGE EXTERNAL FLYBACK SUPPLY DESCRIPTION
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STV9378F
STV9378Fvertical
STV9378F
301L3
max4290
FZJ 135
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CLA864
Abstract: CLA864A CLA864B CLA864C
Text: CLAIREX ELECTRONICS 21427^ 11E I> DIV 0G0GÔ40 3 T-HI-%3 CLA864A CLA864B CLA864C A L L LEACH j ZO SOUAflc Transistor Output GENERAL DESCRIPTION — The Clairex CLA864 series of axial lead isolators are designed for those applications where high voltage isolation requirements apply. They consist
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CLA864A
CLA864B
CLA864C
CLA864
100mw
TA-25-C
CLA864C
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Untitled
Abstract: No abstract text available
Text: $ *f ^ — 1SR153-200 K /D io d e s 1 S R 1 53-200 §{!] cjq/Under Development v u □ -r * - k Silicon Diffused Junction Glass-Sealed High-Speed Rectifying Diode • T liilS /D im e n sio n s (Unit : mm) 1) "E-VU 2) ^-M-AVr 3) miwmfeT&Zo • Features •HA SO;SHU
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1SR153-200
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RLS245
Abstract: No abstract text available
Text: RLS245 K /D io d e s RLS245 '> y =1 > I fcf dr '>U < -y ^ > <7 lJ ~ K U ^ * - K Silicon Epitaxial Planar High-Voltage Switching Leadless Diodes • \H i@ /D im e n s io n s U n it: mm 1 ) m m m T'& Zo 2) ( LL -34 )0 • Features 1) High reliability. 2) Small surface mount type (LL-34).
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RLS245
LL-34)
200mA
RLS245
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Untitled
Abstract: No abstract text available
Text: 0 OPTEK Product Bulletin OPC226 June 1993 GaAIAs Infrared Emitter Chip Type OPC226 .01Z(.30 .OOB(.ZO) «OK. . 01 01 .2 5) : — N-SIDE I I . 0 1 2 .30) . 0 1 0 .25) I I • I ■ ■ ■ AMPHOTERIC | JUNCTION — I- / . 0 0 7 ( .1 8) . 00 51 .1 3) DIMENSIONS ARE
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OPC226
OPC226
10jiA
100mA
100mA<
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3160-FH
Abstract: LDR1101 2885 light emission diodes LR 3160 LDG5171 S53S E7500 GLB2885 OLB2685 YLB2785
Text: SIEMENS AKTIEN6ESELL SCHAF M7E D • S23SbDS 002710T b « S I E G SIEM EN S SUPER-RED YELLOW GREEN OLB 2685 YLB 2785 GLB 2885 UGHTBARS Package Dimensions in Inches mm r PiN FUNCTION 80 (ZO 32) MAX. Anode b 1 40 ( 1015 ) (8 89} MAX Canea*t> Gatoder UMIC ArodeS
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6235bOS
YLB2785
2685/YLB
2785/GLB
3160-FH
LDR1101
2885 light emission diodes
LR 3160
LDG5171
S53S
E7500
GLB2885
OLB2685
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Untitled
Abstract: No abstract text available
Text: $ 1 N4003A K /D io d e s -4 1N 4003A - > =i < * - k w ? t. -t -/ Silicon Diffused Junction Rectifying Diode Glass Sealed Type) • 1) ¿1^7 2) tw it\D £ 0 /D im e n s io n s (Unit : mm) 5o '¡'•WT&Zo 3) S i it f 4) 7 R S t iT '£ > 5 „ • Features
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N4003A
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Untitled
Abstract: No abstract text available
Text: K /D iod es RLS245 R LS245 Silicon Epitaxial Planar High-Voltage Switching Leadless Diode • £ f f2 \|-;£ |l/D im e n s io n s U n it: mm) ”1 ) r ^ j l M U T fo & o 2) mmmmz'&Zo 3) JS/J\5U Z $>&0 ^ S y 5l H t 0 ; —•it-AVt 4) • Features 1) High dielectric strength
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RLS245
LS245
TE-11
TE-12
TE-11A
TE-12A
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