nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D173 PRF949 UHF wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 Philips Semiconductors Product specification UHF wideband transistor PRF949 FEATURES PINNING SOT416 SC-75 • Small size PIN
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M3D173
PRF949
OT416
SC-75)
603508/03/pp16
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UHF transistor GHz
Abstract: MARKING CODE V0 PRF949 SC-75 transistor zo 109
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PRF949 UHF wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 Philips Semiconductors Product specification UHF wideband transistor PRF949 FEATURES PINNING SOT416 SC-75 • Small size
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M3D173
PRF949
OT416
SC-75)
603508/03/pp16
UHF transistor GHz
MARKING CODE V0
PRF949
SC-75
transistor zo 109
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MAR 745 TRANSISTOR
Abstract: marking code 10 sot23 BFR92A BFR92AT SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR92AT NPN 5 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 28 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT FEATURES DESCRIPTION • High power gain
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M3D173
BFR92AT
OT416
SC-75)
BFR92AT
BFR92A.
MBK090
MAR 745 TRANSISTOR
marking code 10 sot23
BFR92A
SC-75
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ATF-10100
Abstract: ATF-10100-GP3 ATF10100
Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS␣ =␣ 25 mA chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise
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ATF-10100
ATF-10100
ATF-10100-GP3
ATF10100
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nec 2401 831
Abstract: nec 2401 2SC5010 nec 2035 744 2SC5010-T1 3699 npn
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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SOT343N
Abstract: BFG540W DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 2000 May 23 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor
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BFG540W
BFG540W/X;
BFG540W/XR
BFG540W/X
613516/04/pp16
SOT343N
BFG540W
DIN45004B
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BFR540
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a
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BFR540
BFR540
125006/03/pp16
MSB003
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MSB003
Abstract: BFR540
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Aug 23 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 FEATURES DESCRIPTION
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M3D088
BFR540
613516/04/pp16
MSB003
BFR540
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BFG540 N43
Abstract: NPN N43 transistor n49 BFG540 n37 transistor MRA751 Code N43
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 03 2000 May 23 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor
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BFG540;
BFG540/X;
BFG540/XR
BFG540
613516/04/pp16
BFG540 N43
NPN N43
transistor n49
BFG540
n37 transistor
MRA751
Code N43
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BFR93A
Abstract: BFR93AT SC-75 MAR 745 TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR93AT NPN 5 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 09 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT FEATURES DESCRIPTION • High power gain
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M3D173
BFR93AT
OT416
SC-75)
BFR93AT
BFR93A.
MBK090
BFR93A
SC-75
MAR 745 TRANSISTOR
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3699 npn
Abstract: 2SC5010 P10389JJ2V0DSJ1
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SC5010
2SC5010-T1
3699 npn
2SC5010
P10389JJ2V0DSJ1
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uhf linear amplifier module
Abstract: GP 809 DIODE MMH3101 81348 MHW7185CL 33048 Power Amplifier MMIC 2.6 GHz 53368 Freescale Semiconductor hybrid amplifier modules MARKING T MMIC AMPLIFIER 32DB GAIN
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor Device Data. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 CATV Distribution Amplifier Modules. DL209 Rev. 2 2/2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 CATV Distribution Amplifier Modules
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DL209
uhf linear amplifier module
GP 809 DIODE
MMH3101
81348
MHW7185CL
33048
Power Amplifier MMIC 2.6 GHz
53368
Freescale Semiconductor hybrid amplifier modules
MARKING T MMIC AMPLIFIER 32DB GAIN
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BFG35
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
125006/03/pp16
BFG35
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ZO 150 74
Abstract: ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 Q62702-F788 VCE0518I siemens 800 169 O zo 107 Siemens S7 400
Text: SIEMENS NPN Silicon RF Transistor • For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.
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Q62702-F788
Bas-135
fi23SbOS
D0b717b
ZO 150 74
ZO 103 MA 75 522
zo 107 MA
10MHZ
BFQ74
VCE0518I
siemens 800 169 O
zo 107
Siemens S7 400
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cfy 19 siemens
Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
Text: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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VXM05208
Q62703-F106
Q62703-F107
Q62703-F108
0Qfcj75Cn
cfy 19 siemens
cfy 14 siemens
CFY 18
siemens gaas fet
CFY 19
cfy siemens
cfy 25-20 cfy 25-17
CFY 10
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transistor zo 103 MA 7S 738
Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
Text: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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BFQ72
Q62702-F776
fl235b05
00b714S
transistor zo 103 MA 7S 738
SiEMENS PM 350 98
VCE05181
siemens 350 98
siemens Pm 90 87
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transistor NEC B 617
Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and
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2SC5010
2SC5010
transistor NEC B 617
nec 2035 744
zo 607 p 408
7749 transistor
ic 151 811
transistor 3568
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Transistor BFR 97
Abstract: bfr 49 transistor BFR34A
Text: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1
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Q62702-F346-S1
A23Sb05
D0b7270
Transistor BFR 97
bfr 49 transistor
BFR34A
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5N521
Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.
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BFQ71
Q62702-F775
0235bG5
DGb713S
5N521
VCE05181
bfq 85
siemens Pm 90 87
transistor zo 103 MA 7S 714
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5N521
Abstract: CFY30
Text: SIEMENS CFY 30 GaAs FET F eatures • Low noise /-'mm = 1.4 d B at 4 G Hz • High gain (11.5 dB typ. a l 4 GHz) • For o scillators up to 12 G Hz • For am p lifiers up to 6 GHz • Io n -im planted p lanar structure • C hip all gold m etallization
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ATF-10100
Abstract: No abstract text available
Text: What H E W L E T T * mLliMPACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data A TF-10100 F e atu res • L o w N o ise F ig u re : 0.5 dB Typical at 4 GHz • L o w B ia s: Vds = 2V,I ds = 25mA • H igh A sso c ia te d G ain: 14.0 dB Typical at 4 GHz
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TF-10100
ATF-10100
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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