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    Abstract: No abstract text available
    Text: i TOSHIBA 9NA19K SILICON PNP EPITAXIAL TYPE PCT PROCESS ZN41Z6 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current ; IcBO=-50nA(Max.) @ VcB“_20V lEBO=-50nA(Max.)


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    PDF 9NA19K ZN41Z6 -50nA -50mA, 2N4124 Ta-25 -10mA,