CR-4305
Abstract: No abstract text available
Text: Mounted on White Roof Mounted Profile Spartan MA600.W.A.ABC.001 Specification Part No. MA600.W.A.ABC.001 Product Name Spartan MA600.W Spartan Screw Mount 3in1 Combination Antenna - White Version - GPS/GLONASS: 1575~1602MHz - Cellular: GSM/CDMA/HSPA/UMTS 2.4GHz / 5GHz
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MA600
1602MHz
SPE-12-8-088/D/ZL
A301111
B305111
C305111
CR-4305
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Untitled
Abstract: No abstract text available
Text: MA600.A.ABC.007 on ground-plane Spartan MA600.A.ABC.007 Specification Part No. MA600.A.ABC.007 Product Name Spartan MA600 Spartan Screw Mount 3in1 Combination Antenna - GPS/GLONASS: 1575~1602MHz - Cellular: GSM/CDMA/HSPA/UMTS 2.4GHz / 5GHz Feature High performance outdoor antenna
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MA600
1602MHz
SPE-13-8-003/C/ZL
A301111
B305111
C305151
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BGY204
Abstract: SC09
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY204 UHF amplifier module Product specification File under Discrete Semiconductors, SC09 1996 May 21 Philips Semiconductors Product specification UHF amplifier module BGY204 FEATURES PINNING - SOT321B • 4.8 V nominal supply voltage
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BGY204
OT321B
BGY204
OT321B
SC09
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BGY205
Abstract: SC09
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY205 UHF amplifier module Product specification Supersedes data of May 1994 File under Discrete Semiconductors, SC09 1996 May 21 Philips Semiconductors Product specification UHF amplifier module BGY205 FEATURES PINNING - SOT321B
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BGY205
OT321B
BGY205
OT321B
SC09
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BGY205
Abstract: pn1996 2 MHz ultrasonic transmitter
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY205 UHF amplifier module Product specification Supersedes data of May 1994 1996 May 21 Philips Semiconductors Product specification UHF amplifier module BGY205 FEATURES PINNING - SOT321B • 6 V nominal supply voltage
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BGY205
OT321B
BGY205
OT321B
pn1996
2 MHz ultrasonic transmitter
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BGY204
Abstract: SC09 MGD375
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY204 UHF amplifier module Product specification File under Discrete Semiconductors, SC09 1996 May 21 Philips Semiconductors Product specification UHF amplifier module BGY204 FEATURES PINNING - SOT321B • 4.8 V nominal supply voltage
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BGY204
OT321B
BGY204
OT321B
SC09
MGD375
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Untitled
Abstract: No abstract text available
Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP420F
BFP420F:
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Untitled
Abstract: No abstract text available
Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP420F
BFP420F:
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Untitled
Abstract: No abstract text available
Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP420F
BFP420F:
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se617
Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
Text: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents
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A13052EJ6V0BL00
A13052EJ6V0BL
se617
SE641
transistor f423
sd667
transistor hh 004
transistor f422
bv0T
F423
n010x
L442
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uhf amplifier design
Abstract: w-TMB uhf amplifier BGY206 MSA486 SC09 MGD353 47VC
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY206 UHF amplifier module Preliminary specification File under Discrete Semiconductors, SC09 1996 May 29 Philips Semiconductors Preliminary specification UHF amplifier module BGY206 FEATURES PINNING - SOT388A • 4.8 V nominal supply voltage
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BGY206
OT388A
BGY206
OT388A
uhf amplifier design
w-TMB
uhf amplifier
MSA486
SC09
MGD353
47VC
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toshiba s-au80
Abstract: S-AU80 Rf power amplifire zg 36 zg 32 zg transistor
Text: S-AU80 TOSHIBA RF Power Amplifire Module S-AU80 900 MHz Band Amplifier Applications GSM • Output Power: Po = 35.0 dBmW (typ.) • Power Gain: Gp = 35.0 dB (typ.) • Total Efficiency: ηT = 43% (typ.) Unit: mm JEDEC EIAJ TOSHIBA Maximum Ratings (Ta = 25°C)
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S-AU80
toshiba s-au80
S-AU80
Rf power amplifire
zg 36
zg 32
zg transistor
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4330-030
Abstract: UHF amplifier module BGY201 SC09
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY201 UHF amplifier module Product specification Supersedes data of June 1994 File under Discrete Semiconductors, SC09 1996 May 22 Philips Semiconductors Product specification UHF amplifier module BGY201 FEATURES PINNING - SOT278A
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BGY201
OT278A
BGY201
4330-030
UHF amplifier module
SC09
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BGY203
Abstract: SC09
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY203 UHF amplifier module Product specification Supersedes data of May 1994 File under Discrete Semiconductors, SC09 1996 May 23 Philips Semiconductors Product specification UHF amplifier module BGY203 FEATURES PINNING - SOT342A
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BGY203
OT342A
BGY203
SC09
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NJG1148MD7
Abstract: No abstract text available
Text: NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select
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NJG1148MD7
95GHz,
EQFN14-D7
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OC106
Abstract: No abstract text available
Text: NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select
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NJG1148MD7
95GHz,
EQFN14-D7
NJG1148MD7
95GHz
OC106
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BGY206
Abstract: pn1998
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D369 BGY206 UHF amplifier module Product specification Supersedes data of 1998 Apr 15 1998 May 08 Philips Semiconductors Product specification UHF amplifier module BGY206 FEATURES PINNING - SOT388B • 4.8 V nominal supply voltage
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M3D369
BGY206
OT388B
BGY206
OT388B
SCA60
125108/00/04/pp16
pn1998
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BFP650
Abstract: BFP650 noise figure AN077 infineon AN077 sdars C166 NF50 BFP650 2.4GHz lna
Text: BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP650
OT343
OT343-PO
OT343-FP
BFP650:
OT323-TP
BFP650
BFP650 noise figure
AN077
infineon AN077
sdars
C166
NF50
BFP650 2.4GHz lna
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sfns201
Abstract: No abstract text available
Text: 70 SOLITRON DEVICES INC DFIa3t.fit.02 OOOEOHS t. f • ' 3 5 ’^lS' SWITCH MOS SFNS201C POWER MOS PACKAGE TO-52 MAXIMUM RATINGS VDS *D IDM VGS PD ZL ^J oper T „ stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 200 Drain Current, Continuous @ T =25°C
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SFNS201C
5M6-24UNF-2A
P06fTKM
eA03AT
sfns201
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sfnf221
Abstract: No abstract text available
Text: _03686O2 SOLITRON DEVICES INC SFNF221 70C 0 2 0 ^° SWITCH MOS ?□ PACKAGE TO -39 DE I T-39-09 fi3bfibüa D00ED4D S |~~ POWER MOS MAXIMUM RATINGS VDS *D ZDM VGS PD ZL TJ oper T stg UNITS PARAMETER SYMBOL 150 Drain Current, Continuous @ Tc»25°C 3.5 A
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03686O2
T-39-09
D00ED4D
SFNF221
5M6-24UNF-2A
P06fTKM
eA03AT
sfnf221
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203C
Abstract: T-39 10-32 UNF 2A
Text: 8368602 SOLITRON DEVICES 70 DE|fl3t8toa D 0 M D 3 7 a 1 “ INC 70C 02037 D T-39-11 SWITCH MOS SFN203C POWER MOS PACKAGE TO-3 MAXIMUM RATINGS VDS *D XDM VGS PD ZL ^Jioper T stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 200 V Drain Current, Continuous § T =25°C
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ooaaD37
T-39-11
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
203C
T-39
10-32 UNF 2A
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M57741
Abstract: No abstract text available
Text: • MITSUBISHI RF POWER MODULE bEMRflSR 0D17200 575 ■ M57741M 156-168MHZ, 12.5V, 28W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM h k £ > —11—£ > h h <> P IN : 3 Pm ©VCCI VCC 2 ®Po ©G N D : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY
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0D17200
M57741M
156-168MHZ,
200mW
M57741
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Untitled
Abstract: No abstract text available
Text: MICRON 1 MEG DRAM MODULE 1 MEG X X MT9D19 9 DRAM MODULE 9 DRAM FAST PAGE MODE MT9D19 LOW POWER, EXTENDED REFRESH (MT9D19 L) FEATURES • Industry standard pinout in a 30-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply
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MT9D19
MT9D19)
MT9D19
30-pin
575mW
512-cycle
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BGY205
Abstract: 4330 030 36 ferroxcube
Text: Product specification P hilips Sem iconductors UHF amplifier module BGY205 PINNING -SOT321B FEATURES • 6 V nominal supply voltage DESCRIPTION PIN • 3.5 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output
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BGY205
BGY205
OT321B
-SOT321B
MLB740
OT321B.
G103S3Ã
4330 030 36 ferroxcube
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