pj 87 diode
Abstract: diode pj 87 pj 66 diode PJ+906+lv 0/pj 87 diode
Text: SK30GD066ET ?- O TR U$Q 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT L$VW ?X O TR U$ @$ ?X O I[R U$ @$¥] *'-) ZJJ L NJ C ?- O [J U$ PI C ZJ C ^ TJ L ?X O IRJ U$ Z b- ?- O TR U$ PZ C ?- O [J U$ Tc C ZJ C IZJ C @$¥]O T : @$0%&
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SK30GD066ET
pj 87 diode
diode pj 87
pj 66 diode
PJ+906+lv
0/pj 87 diode
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ZJ DIODE
Abstract: marking 222 zener diode Diode Marking z3 DO-35 marking 683 zener diode
Text: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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RthJA300K/W
1-Nov-2006
DO-35
ZJ DIODE
marking 222 zener diode
Diode Marking z3 DO-35
marking 683 zener diode
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Untitled
Abstract: No abstract text available
Text: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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300K/W
1-Jun-2004
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Untitled
Abstract: No abstract text available
Text: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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300K/W
1-Apr-2006
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zener diode z39b
Abstract: No abstract text available
Text: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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300K/W
1-Jan-2006
zener diode z39b
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zener diode z39b
Abstract: ZJ DIODE
Text: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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RthJA300K/W
zener diode z39b
ZJ DIODE
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Untitled
Abstract: No abstract text available
Text: ZJ Series Axial Lead Zener Diodes SMALL SIGNAL ZENER DIODES 0.5WATTS P b Lead Pb -Free Features: * Low leakage * High reliability Applications: * Voltage stabilization DO-35 Construction: * Silicon epitaxial planar Mechanical Data: * Case : DO-35 Glass Case
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DO-35
DO-35
05-Jan-07
300K/W
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ZENER CODE 51b
Abstract: 47C 36a 10D-9 27C zener diode Lz 99 diode zener 30c Z 51a zener
Text: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range
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16tance
ZENER CODE 51b
47C 36a
10D-9
27C zener
diode Lz 99
diode zener 30c Z
51a zener
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ZJ33B
Abstract: 27C zener diode zener 30c Z 51a zener
Text: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range
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ZJ18B
Abstract: ZJ15B ZJ10A ZJ12B ZJ10 ZJ10B ZJ10C ZJ10D ZJ11A ZJ11B
Text: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Max. 0.45 Min. 27.5 Max. 1.9 Features Black Cathode Band • Glass sealed envelope Black Part No. • High reliability XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm
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DO-34
ZJ18B
ZJ15B
ZJ10A
ZJ12B
ZJ10
ZJ10B
ZJ10C
ZJ10D
ZJ11A
ZJ11B
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RSR010N10
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch MOSFET RSR010N10 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). (3) (1) (2) Abbreviated symbol : ZJ
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RSR010N10
RSR010N10
Pw10s,
R1120A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3511 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3511 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3511 TO-220AB 2SK3511-S TO-262 2SK3511-ZJ TO-263
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2SK3511
2SK3511
2SK3511-S
2SK3511-ZJ
2SK3511-Z
O-220AB
O-262
O-263
O-220SMD
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2SK3510
Abstract: 2SK3510-S 2SK3510-Z 2SK3510-ZJ MP-25 MP-25Z D1568
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3510 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3510 TO-220AB 2SK3510-S TO-262 2SK3510-ZJ TO-263
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2SK3510
2SK3510
O-220AB
2SK3510-S
O-262
2SK3510-ZJ
O-263
2SK3510-Z
O-220SMDNote
2SK3510-S
2SK3510-Z
2SK3510-ZJ
MP-25
MP-25Z
D1568
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ZJ12B
Abstract: ZJ12C ZJ16B ZJ18B ZJ5V6B ZJ15A ZJ-15B diode Lz 66 diode Lz 99 ZJ10
Text: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications min. 27.5 Features • Glass sealed envelope • High reliability max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.5 Glass case JEDEC DO-34 Dimensions in mm
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DO-34
ZJ12B
ZJ12C
ZJ16B
ZJ18B
ZJ5V6B
ZJ15A
ZJ-15B
diode Lz 66
diode Lz 99
ZJ10
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DO48 diode
Abstract: GL6ZJ27
Text: PREPARED BY: DATE: /?7’ ZJ-dtx /t6 T. cleda ELECTRONIC COMPONENTS GROUP SHARP CORPORATION s PEC~CATION DEVICE SPECIFICATION 1 Opto-Electronic Devices Division FOR Light Emitting Diode MODEL No. I 1 GL6ZJ27 I 1. These specification sheets include materials protected under the copyright of Sharp Corporation “Sharp” .
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GL6ZJ27
JunhY99
DO48 diode
GL6ZJ27
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D1459
Abstract: 2SK3430 2SK3430-S 2SK3430-Z 2SK3430-ZJ MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3430 TO-220AB 2SK3430-S TO-262 2SK3430-ZJ TO-263 2SK3430-Z TO-220SMDNote
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2SK3430
2SK3430
O-220AB
2SK3430-S
O-262
2SK3430-ZJ
O-263
2SK3430-Z
O--220SMDNote
D1459
2SK3430-S
2SK3430-Z
2SK3430-ZJ
MP-25
MP-25Z
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2SK3056
Abstract: 2SK3056-S 2SK3056-Z 2SK3056-ZJ MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3056 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3056 TO-220AB 2SK3056-S TO-262 2SK3056-ZJ TO-263 2SK3056-Z
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2SK3056
2SK3056
O-220AB
2SK3056-S
O-262
2SK3056-ZJ
O-263
2SK3056-Z
O-220SMD
2SK3056-S
2SK3056-Z
2SK3056-ZJ
MP-25
MP-25Z
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ITE 8500
Abstract: transistor d 1302 2SK3510 2SK3510-S 2SK3510-Z 2SK3510-ZJ MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3510 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3510 TO-220AB 2SK3510-S TO-262 2SK3510-ZJ TO-263 2SK3510-Z TO-220SMDNote
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2SK3510
2SK3510
O-220AB
2SK3510-S
O-262
2SK3510-ZJ
O-263
2SK3510-Z
O-220SMDNote
ITE 8500
transistor d 1302
2SK3510-S
2SK3510-Z
2SK3510-ZJ
MP-25
MP-25Z
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2SK3355
Abstract: 2SK3355-S 2SK3355-Z 2SK3355-ZJ MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3355 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3355 TO-220AB 2SK3355-S TO-262 2SK3355-ZJ TO-263 2SK3355-Z TO-220SMDNote
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2SK3355
2SK3355
O-220AB
2SK3355-S
O-262
2SK3355-ZJ
O-263
2SK3355-Z
O-220SMDNote
2SK3355-S
2SK3355-Z
2SK3355-ZJ
MP-25
MP-25Z
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15 BZX
Abstract: BZY 100 bzx c 1v4 bzx c27 bzy 200 85C36 bzx 2v1
Text: Diodes Z diodes BZX 8 5 / . . . ' Type Pv = 1.3 W t/z Fig. Nr. 21 V and 10'4/°C ano 'zj at O >Z mA 'zj a* O >Z mA / R at ma ÜR V 1 BZX 8 5 /C 2 V 7 2.5.2.9 -8 .-5 < 20 80 <400 1 < 150 BZX 8 5 /C 3 V 0 2 .8 .3 2 -8 .-5 < 20 80 <400 1 < 100 1 BZX 8 5 /C 3 V 3
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87/0V7
BZY87/1V4
87/2V1
87/2V8
87/3V4
15 BZX
BZY 100
bzx c 1v4
bzx c27
bzy 200
85C36
bzx 2v1
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Untitled
Abstract: No abstract text available
Text: Zjï SGS-THOMSON ¡ILIOTI^OKinei BUH615D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E 8 1 734 (N
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BUH615D
ISOWATT218
P025C
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Untitled
Abstract: No abstract text available
Text: Zjï DALC112S1 Application Specific Discretes A.S.D. LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION MAIN APPLICATIONS Where ESD protection for high speed datalines is required : • LAN /W AN equipment ■ Computer I/O ■ Graphic video port ■ Set top box I/O
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DALC112S1
ARRAYOF12
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Untitled
Abstract: No abstract text available
Text: Zjï SGS-THOMSON ¡[LieraMe TIP140/141/142 TIPI 45/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION
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TIP140/141/142
TIP141,
TIP142,
TIP145
TIP147
TIP140,
TIP141
TIP142
O-218
TIP145,
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2SD946
Abstract: 2SB895 2SD950 2SB895A 2SD946A 2SD951 I-H-1000
Text: PANASONIC INDL/ELEKiSEMIJ 72C D | t,^3EflS4 DDCHMSM S | ^ y V T s S _ 2SD946, 2SD946A 2SD946, 2SD946A '> \ ZJ y N P N U > b > / S i NPN Epitaxial Planar Darlington • ifkMi&if f i f f l / A F Amplifier 2SB895,
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2SD946,
2SD946A
2SB895,
2SB895A
2SD946
2SB895
2SD950
2SB895A
2SD946A
2SD951
I-H-1000
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