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    ZERO-GATE VOLTAGE DRAIN CURRENT Search Results

    ZERO-GATE VOLTAGE DRAIN CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    ZERO-GATE VOLTAGE DRAIN CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4435a

    Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V


    Original     		PDF

    OM55N10NK

    Abstract: OM60N10NK OM75N05NK OM75N06NK
    Text: Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 44 Electrical Characteristics - OFF V BR DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0)


    Original     		PDF

    2SK2678LS

    Abstract: No abstract text available
    Text: 2SK2678LS N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications ¥ Low ON-state resistance. ¥ Low Qg. Tc=25¡C Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current


    Original     		PDF 2SK2678LS 2SK2678LS

    2SK2678

    Abstract: No abstract text available
    Text: 2SK2678 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Tc=25°C Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current


    Original     		PDF 2SK2678 981224TM2fXHD 2SK2678

    OM400L60CMC

    Abstract: No abstract text available
    Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM400L60CMC (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =600V


    Original     		PDF OM400L60CMC /-15V, OM400L60CMC

    Untitled

    Abstract: No abstract text available
    Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM150F120CMC (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V


    Original     		PDF OM150F120CMC /-15V, -1500A/

    Untitled

    Abstract: No abstract text available
    Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM300L60CMC (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =600V


    Original     		PDF OM300L60CMC /-15V, OM300L60CMC

    MJ 800

    Abstract: No abstract text available
    Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM150F120CMA (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V


    Original     		PDF OM150F120CMA /-15V, -1500A/ MJ 800

    Untitled

    Abstract: No abstract text available
    Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM150L120CMA (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V


    Original     		PDF OM150L120CMA /-15V, -1500A/

    Untitled

    Abstract: No abstract text available
    Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM200L120CMA (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V


    Original     		PDF OM200L120CMA /-20V, -2000A/

    DUAL GATE MOS-FET

    Abstract: jfet pch TRANS JFET N-CH
    Text: NTE Type No. Polarity and Material Description and Application Case Style Diag. No. Voltage Gate to Source Volts Cutoff Voltage Gate to Source (Volts) Drain Current Zero-Gate (mA) Drain Current (mA) Res Drain to Source (Ohms) Cap Input (pf) Min Max(OFF)


    OCR Scan     		PDF 400MHZ 200MHZ 100HZ 400MH2 250pA DUAL GATE MOS-FET jfet pch TRANS JFET N-CH

    Untitled

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTORS FET NTE TVpe No. Polarity and Material Description and Application Case Style Diag. No. Voltage Gate to Source Min (Volts) Cutoff Voltage Gate to Source Max(OFF) (Volts) Drain Current Zero-Gate Min-Max (mA) Drain Current Max(OFF)


    OCR Scan     		PDF T0106 250pA QQ03S4b

    ECG465

    Abstract: ECG491 ECG466 uei 310 ECG490 ecg mosfet ECG464 ECG492 mosfet 830 transconductance mosfet
    Text: Field Effect Transistors cont'd (Observe ECG Type Transcon­ ductance gfs pmhos Description and Application Gate to Source Cutoff Voltage V GS (off) Max V Zero-Gate Drain Current Drain Current •d s s •d 10 nA |Max ECG464 ▲ m Gate to Drain to Source


    OCR Scan     		PDF ecg464 ECG465) to-72 ecg465 ECG464) ecg466 ECG490 ECG491 ECG492 ECG465 uei 310 ECG490 ecg mosfet ECG464 mosfet 830 transconductance mosfet

    Untitled

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application Case Style Dlag. No. Voltage Gate to Source Min (Volta) Cutoff Voltage Gate to Source Max(OFF) (Volta) BV q s s Drain Current Zero-Gate Min-Max (mA) Drain Current


    OCR Scan     		PDF 250pA

    Untitled

    Abstract: No abstract text available
    Text: CEP6031LS2/CEB6031LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voltage Drain Current Idss V ds =24V, V gs =0V 10 pA Gate-Body Leakage


    OCR Scan     		PDF CEP6031LS2/CEB6031LS2 250hA

    2SJ487

    Abstract: jvv diode
    Text: Power FET Specification Maximum Ratings Symbol T stg T Ch V DSS V GSS I D I DP Condition Pulse width ^ 10 ¡is Duty cycle S 1/100 Source Current DC IS Total Power Dissipation P T Item Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage


    OCR Scan     		PDF Vds--30V, 2SJ487 fiH11367 QQQ2ti31 jvv diode

    B703A

    Abstract: GS109 P703
    Text: CEP703ALS2/CEB703ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BV dss V gSz OV, ID=250[i A 30 Zero Gate Voltage Drain Current Idss V ds =24V, Vgs =0V 10 [iA Gate-Body Leakage


    OCR Scan     		PDF CEP703ALS2/CEB703ALS2 B703A GS109 P703

    250M

    Abstract: IRF240
    Text: electrical characteristics T q - 2 5 ° C (unless otherwise specified) CHARACTERISTIC [ off characteristics Drain-Source Breakdown Voltage IRF230/D86DN2 (VGS = 0V, lD = 250 ,uA) IRF231/D86EM2 Zero Gate Voltage Drain Current (Vps = Max Rating, VGs = 0V, T c = 25°C)


    OCR Scan     		PDF IRF230/D86DN2 IRF231/D86EM2 00A//usec, 250M IRF240

    CEP603AL

    Abstract: CEB603ALS2 CEP603A
    Text: CEP603ALS2/CEB603ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voilage Drain Current Idss V ds=24V, V gs =0V 10 [iA Gate-Body Leakage


    OCR Scan     		PDF CEP603ALS2/CEB603ALS2 250hA CEP603AL CEB603ALS2 CEP603A

    ECG466

    Abstract: ECG468 ECG490 ecg mosfet ECG491 ECG464 ECG465 ECG492 ecg jfet
    Text: Field E ffe ct Tran sisto rs cont'd (Observe ECG Typo ECG464 ▲ Transcon­ ductance gfs fimhos Description and Application Gate to Source Cutoff Voltage VGS (off) Max V M P S F E I, Zero-Gate Drain Current • dss 10 nA ¡¡Max f Drain Current fD Input


    OCR Scan     		PDF ecg464 ECG465) to-72 ecg465 ECG464) ecg466 ECG490 ECG491 ECG491 ECG492 ECG468 ECG490 ecg mosfet ECG464 ECG492 ecg jfet

    300 Amp mosfet

    Abstract: 200 Amp mosfet ECG222 ECG459 ECG451 ECG458 ECG221 ECG457 ECG312 dual jfet vhf
    Text: Field Effect Transistors ECG Type Description and Application Maximum Ratings at T a = 25°C Observe MOS Handling ▲ Gate to Source Trans­ Cutoff conductance Voltage gfs VGS <°«> Typ fjmho8 Max V Zero-Gate Gate To Voltage Source Drain Breakdown Input


    OCR Scan     		PDF ECG220 ECG221 ECG222 ECG45ECG489 ECG455 RF-15A T49-1 ECG461 ECG46Â ECG453 300 Amp mosfet 200 Amp mosfet ECG222 ECG459 ECG451 ECG458 ECG221 ECG457 ECG312 dual jfet vhf

    MMC4338

    Abstract: MMCF4338 MMCF4339
    Text: MMC4338, MMCF4339 continued E LE C T R IC A L CH A R A CTER ISTICS Characteristic Gate-Source Breakdown Voltage ( lG = 10 MAdc, V DS = 0) Gate Reverse Current (V GS = 30 Vdc, V p g = 0) Gate-Source Pinch-Off Voltage <VDS = 20 Vdc, l D = 1.0 nAdc) Zero-Gate Voltage Drain Current


    OCR Scan     		PDF MMC4338, MMCF4339 MMCF4338 MMCF4339 4-26c, MMC4338

    BFM34

    Abstract: 100WF
    Text: nu itnut i SEME BFM34 LAB MECHANICAL DATA TetraFET 100W - 28V - 900MHz DIM A B C D E F G H 1 J K M N O P ELECTRICAL CHARACTERISTICS Parameter PER SIDE Drain-Source B Vncc Zero Gate Voltage Drain Current Iq SS Gate Leakage Current Toi. 0.50 0.13 5° 0.13 0.13


    OCR Scan     		PDF BFM34 900MHz 100mA 900MHz A133167 BFM34 100WF

    ECG222

    Abstract: ECG458 300 Amp mosfet ecg459 transistor jfet ecg 200 Amp mosfet dual jfet vhf ECG312 ECG451 ECG221
    Text: Field E ffect Transistors M axim um Ratings at T a = 25°C Observe M O S Handling ▲ Gate to Source Cutoff Voltage V GS (off) M ax V Zero-Gate Gate To Voltage Source Drain Breakdown Current Voltage IpSS mA b v GSS Min - Max Min V 8 5 -2 5 20 15,000 18 typ


    OCR Scan     		PDF ECG220 ECG221 ECG222 RF-15A T49-1 ECG461 ECG46Ã ECG453 SP-92 T13-1* ECG222 ECG458 300 Amp mosfet ecg459 transistor jfet ecg 200 Amp mosfet dual jfet vhf ECG312 ECG451 ECG221