diodo zener 5v
Abstract: IN5815 IN5808 IN5809 diodo m1 63 diodo 72 diodo Lz 66 in5806 test leads IN5812 1N5663
Text: Zener Type No. Zener Voltage at Izr @ mA Volts MICROSEMI Max. Zener Impedance @ lZr Ohms Zener Voltage Tolerance No Im p ed a n ce Sp e cifie d N o S u ffix = 1 0 % S u ffix A = 5 % Power Rating 1,500 wat s Device Package 1N5663 1N5663A 1N5664 1N5664A 170.0
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1N5663
DO-13
1N5663A
1N5664
1N5664A
IN5665
1N5665A
IN5666
1N5667
IN5668
diodo zener 5v
IN5815
IN5808
IN5809
diodo m1 63
diodo 72
diodo Lz 66
in5806 test leads
IN5812
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50 Watt Zener Diode
Abstract: 10 watt zener diode LN298 1N2990B TLC 1050 diode Lz zener ZENER DIODE 1N2976B zener diode 1n4553B 6.8 B1 zener 1N2991B
Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current IZM TYPE NO. Zener Voltage V z @ lz Test Current lz
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1N3993A
1N3994A
1N3995A
1N3996A
1N3997A
1N2990B
1N2991B
1N2992B
1N2993B
1N2994B
50 Watt Zener Diode
10 watt zener diode
LN298
TLC 1050
diode Lz zener
ZENER DIODE 1N2976B
zener diode 1n4553B
6.8 B1 zener
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zener 245
Abstract: 245 zener 10 watt zener diode ZENER DIODE 1N2976B diode Lz zener LN298 50 Watt Zener Diode 1N2828B 1N2990B 1N2991B
Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 Maximum Zener Current Test Current lz Zener Impedance Zz Volts mA 1N2990B 1N2991B 1N2992B 1N2993B 1N2994B 33 36 39 43 45 75 70 65 60 55 Ohms
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1N3993A
1N3994A
1N3995A
1N3996A
1N3997A
1N2990B
1N2991B
1N2992B
1N2993B
1N2994B
zener 245
245 zener
10 watt zener diode
ZENER DIODE 1N2976B
diode Lz zener
LN298
50 Watt Zener Diode
1N2828B
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b2t52c43
Abstract: marking s47 B2T52-C43 BZT52C12 B2T52-C7v5
Text: Surface M ount Zeners m 410mW Zener Diodes/SOD123_ Type Number Marking Code Zener Voltage Range* _N N Izj @ Zzi VR !zm O hm s mA O hm s mA %/°C V o lts mA 1 -0.065 -0.060 -0.055 = 5m A @ •st N TC Vz Volts @ Izt * Min Reverse Maximum Typical Temperature
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410mW
Diodes/SOD123_
b2t52c43
marking s47
B2T52-C43
BZT52C12
B2T52-C7v5
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Untitled
Abstract: No abstract text available
Text: 7 * '> - w u x /w * m s Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • ftM U ! OUTLINE ST03D-82 Unit: mm Weight 0.65 f Package : AX 10 82V 300W «it 26.5 26.5 Feature ■ Power Zener Diodes with FRD ■ Axial Package ■ Application for snubber circuit
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ST03D-82
100kHz
avei450H
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11687A
Abstract: 1Z4.7T5 1Z15T5 1Z12T5 5ZS10B 29674E 1Z10T5 1Z16T5 1Z5.6 1Z5.1T5
Text: Sem iconductors International Rectifier Zener Diodes REFERENCE T A B L E 1.5 W att a t4 T C - 5 % tole ran ce Type Stock No. 1Z3.3T5 1Z3.6T5 1Z3.9T5 1Z4.3T5 1Z4.7T5 11M 6X 11M 7R 116680 Zener Voltage S % Tolerance Volts Min. Max. lz Max. mA DC at 40‘C mA
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11S67R
1168SC
11876H
11871F
11672D
11I73B
11S74X
1187SR
11676G
29674E
11687A
1Z4.7T5
1Z15T5
1Z12T5
5ZS10B
1Z10T5
1Z16T5
1Z5.6
1Z5.1T5
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Untitled
Abstract: No abstract text available
Text: 7 * '> - w u x /w * m s Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • f t M U ! OUTLINE ST02D-82 Unit: mm Weight 0.38 g Package : AX078 82V 200W X r> « it 27.5 27.5 j 4.0 Feature G> ■ Power Zener Diodes with FRD ■ Axial Package
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ST02D-82
AX078
100kHz
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ATTP1
Abstract: BZX85 BZX851
Text: <jX >G e n e r a l v BZX85 Series S e m ic o n d u c t o r Zener Diodes Vz Range 3.6 to 200V Power Dissipation 1,3W DO-2Q4AL DO-41 Glass Features -f+i ►Silicon Planar Power Zener Diodes. i >For use in stabilizing and clipping circuits with high power rating.
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BZX85
DO-41
10K/box
10K/borature
BZX85.
ATTP1
BZX851
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IN6284a
Abstract: in6285A IN6283A IN6282A IN6277 IN6267A IN6292A IN5908 IN6275A IN6286A
Text: POWERZORB L8 Series 1.5 KW Transient Absorption Zener Diodes A range of unipolar protection diodes in a moulded D027A package. P s u rg e -1.5KW; — ;— — !- '•-/1 . . ~*i<
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D027A
IN6284a
in6285A
IN6283A
IN6282A
IN6277
IN6267A
IN6292A
IN5908
IN6275A
IN6286A
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MN6066
Abstract: MN6061A
Text: 1N6036 thru 1N6072A MicrojsemiCorp. $ Tbe <bode experts ' - SANTA ANA. CA SCOTTSDALE, AZ For more information cali: 602 941-6300 FEATU RES BIDIRECTIONAL TRANSIENT ABSORPTION ZENER • 1500 WATTS PEAK POWER DISSIPATION • AVAILABLE IN STANDOFF VOLTAGES FROM S.5V TO 1B5V
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1N6036
1N6072A
1N6070A)
MIL-S-19500/507
surge08
MN6066
MN6061A
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in823
Abstract: IN821 DIODE D 92 02 78.P
Text: S E M I T R O N I N D U S T R I E S LTD IN82I-82 M3E T> ñiaTññT DOGGlbT ñ • SLCB SERIES Zener Reference Diodes 6V2 and 6V55 Volts Temperature Compensated APPLICATIONS ■ Semitron's ‘ZR’ range of silicon voltage references are designed and tested to provide an economical and stable
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IN82I-82
400mW,
75KHz
ab00/3
DO-35
DO-41
DO-15
DO-201AD
in823
IN821
DIODE D 92 02 78.P
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ZENER bzy
Abstract: bzy 79 BZY97C bzy 150 Zener 4v7 bzy 6v2 bzy 53 Zener BZY 97 BZY 40 ZENER 3v3
Text: SbE D • 7 T ET S3 7 O G H l iT l 7GT ■ S6TH rZJ SCS-THOMSON f^7# MffiMilLiOTaiaaes BZY 97 C 3V3 TW/-/5* 200 S G S- T H O M S O N ZENER DIODES VOLTAG E RANGE: 3.3V TO 200V HER M ETICALLY SEALED PLASTIC CASE PACKAGE ACCORDING TO NORMALIZATION CCTU : F 126
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7TETS37
Valu102
ZENER bzy
bzy 79
BZY97C
bzy 150
Zener 4v7
bzy 6v2
bzy 53
Zener BZY 97
BZY 40
ZENER 3v3
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STMicroelectronics datasheet LF33
Abstract: MELF dimensions st CDLL6309 CDLL6310 CDLL6312 CDLL6313 CDLL6314 CDLL6315 CDLL6316 CDLL6317
Text: c o m p e n s a t e » d e v i c e s T nT ZOE D S3DSSS4 0000337 L. T - n - n • ZENER DIODE f • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL6309 • LOW REVERSE LEAKAGE CHARACTERISTICS thru CDLL6355 • LOW NOISE CHARACTERISTICS • DOUBLE SLUG CONSTRUCTION
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CDLL6309
CDLL6355
500mW
33mW/C
200mA:
250pA
250/iA
DO-213AA
DO-213AB
STMicroelectronics datasheet LF33
MELF dimensions st
CDLL6309
CDLL6310
CDLL6312
CDLL6313
CDLL6314
CDLL6315
CDLL6316
CDLL6317
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Untitled
Abstract: No abstract text available
Text: c o m p e n s a t e » d e v i c e s T nT ZOE D 23025S4 0000337 L. T - n - n • ZENER DIODE f • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL6309 • LOW REVERSE LEAKAGE CHARACTERISTICS thru CDLL6355 • LOW NOISE CHARACTERISTICS • DOUBLE SLUG CONSTRUCTION
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23025S4
CDLL6309
CDLL6355
500mW
33mW/C
200mA:
CDLL6309
CDLL6310
C0LL6311
CDLL6312
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zener diode zS
Abstract: ZS11 100 watt zener diode LT 72 ZENER
Text: ZS SERIES, 4.7 VOLTS DIODES LIMITED thru 36 VOLTS FAIRACRES ESTATE. DEDW O RTH R OAD, W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 T ele x: 847 25 5 SEMICONDUCTOR MANUFACTURERS The Diodes Incorporated types ZS 4.7 thru ZS 36 represent a line of 1 watt, axial lead, zener diodes
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CDLL6309
Abstract: CDLL6310 CDLL6312 CDLL6313 CDLL6314 CDLL6315 CDLL6316 CDLL6317 CDLL6355
Text: c o m p e n s a t e » d e v i c e s T nT ZOE D 23025S4 0000337 L. T-n-n • ZENER DIODE f • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL6309 • LOW REVERSE LEAKAGE CHARACTERISTICS thru CDLL6355 • LOW NOISE CHARACTERISTICS • DOUBLE SLUG CONSTRUCTION MAXIMUM RATINGS
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23025S4
CDLL6309
CDLL6355
500mW
33mW/C
200mA:
250pA
250/iA
fiVv/HLL34)
23G25S4
CDLL6309
CDLL6310
CDLL6312
CDLL6313
CDLL6314
CDLL6315
CDLL6316
CDLL6317
CDLL6355
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Untitled
Abstract: No abstract text available
Text: LX1994 TM High Efficiency LED Driver P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The use of external N-channel MOSFET allows design to optimize system efficiency. The OVP protection comparator eliminates the need of an external Zener diode clamp. The OVP function can be
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LX1994
LX1994
LX1970)
guara3-2570
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Untitled
Abstract: No abstract text available
Text: LX1994 TM High Efficiency LED Driver P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The use of external N-channel MOSFET allows design to optimize system efficiency. The OVP protection comparator eliminates the need of an external Zener diode clamp. The OVP function can be
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LX1994
LX1970)
10-Pin
LX1994
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Untitled
Abstract: No abstract text available
Text: LX1994 TM High Efficiency LED Driver P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The use of external N-channel MOSFET allows design to optimize system efficiency. The OVP protection comparator eliminates the need of an external Zener diode clamp. The OVP function can be
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LX1994
LX1970)
10-Pin
LX1994
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PDF
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G1348
Abstract: FDV303 G24451 fdn337 FDV303N BSS123 LX1970 LX1994 LX1994CDU LX1994CDU-TR
Text: LX1994 TM High Efficiency LED Driver P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The use of external N-channel MOSFET allows design to optimize system efficiency. The OVP protection comparator eliminates the need of an external Zener diode clamp. The OVP function can be
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Original
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LX1994
LX1994
LX1970)
guaran893-2570
G1348
FDV303
G24451
fdn337
FDV303N
BSS123
LX1970
LX1994CDU
LX1994CDU-TR
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L20C100
Abstract: L20C10 L20C11 L20C12 L20C13 L20C15 L20C16 L20C18 L20C20 L20C22
Text: ‘SEMITRON INDUSTRIES LTD eOE D a iB T a a T o a a a a a ? Transient Absorption Zener Diodes 445 • s l c b L20 Series ■*-11-13 Electrical Characteristics @ 25 °C Breakdown Voltage VBR Volts SEMITRON Type No. L20C6v8 L20C7v5 L20C8v2 L20C9v1 L20C10 L20C11
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L20C6v8
L20C7v5
L20C8v2
L20C9V1
L20C10
L20C11
L20C12
L20C13
200-C
ai37flaT
L20C100
L20C15
L20C16
L20C18
L20C20
L20C22
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Untitled
Abstract: No abstract text available
Text: LX1994 TM High Efficiency LED Driver P RODUCTION D ATA S HEET The use of external N-channel MOSFET allows design to optimize system efficiency. The OVP protection comparator eliminates the need of an external Zener diode clamp. The OVP function can be scaled for any output voltage.
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LX1994
LX1994
LX1970)
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1.5SMC75AT3
Abstract: opto marking 314 230 1.5SMC10AT3 1.5SMC15AT3
Text: M O T O R O L A SC D I O D E S / O P T O BTE D B3 b 3 b ? e S S 0 0 0 3 1 0 4 Ö » M O T 7 Order this data sheet by 1.5SMC6.8T3/D MOTOROLA SEMICONDUCTOR E TECHNICAL DATA T ' l l -J U Zener Transient Voltage Suppressors The 1.5SMC6.8T3 series is designed to protect voltage sensitive components from high
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Untitled
Abstract: No abstract text available
Text: POWER ZENERS UZ706 SERIES UZ806 SERIES UZ706HR2 SERIES UZ806HR2 SERIES 3 Watt FEATURES • 10 Tim es Greater Surge R ating than Conventional 1 W att Types • S m all P h ysical Size DESCRIPTIO N Fused-in-glass m e ta llu rg ica lly bonded 3 watt zener diodes.
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UZ706
UZ806
UZ706HR2
UZ806HR2
60-cycle
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