smd transistor marking PA
Abstract: "marking PA" SMD DIODE zener SOT89 20 SMD DIODE zener SOT89 marking PA 2SJ179
Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ179 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 MAX.@VGS=-4.0V,ID=-0.5A RDS on =1.0 MAX.@VGS=-10V,ID=-0.5A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 2.60 +0.1 -0.1 Bidircetional Zener Diode for protection is incorporated betweent
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2SJ179
OT-89
smd transistor marking PA
"marking PA"
SMD DIODE zener SOT89 20
SMD DIODE zener SOT89
marking PA
2SJ179
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conclusion of zener diode voltage report
Abstract: 1314 MARKING DIODE lrc zener diode
Text: 乐山无线电股份有限公司 Leshan Radio Company, Ltd. 产 品 规 格 书 Specification of Products Samsung VD TO CUSTOMER CUSTOMER P.N. LRC P.N. LRC099-04BT1G DESCRIPTION SC-70-6 ESD Protection Array APPROVE BY 接受印 ACKNOWLEDGEMENT 兹证明此份资料已经收到
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LRC099-04BT1G
SC-70-6
LRC099-04BT1G
350mm3
J-STD-020B,
conclusion of zener diode voltage report
1314 MARKING DIODE
lrc zener diode
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IGBT Battery 120 watt Charger circuit diagrams
Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000 SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .
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BRD8016/D
Nov-2000
r14525
IGBT Battery 120 watt Charger circuit diagrams
tl494 spice model
four relay stabilizer circuit diagram 650 va
gsm door lock circuit diagram
MRC 433 mosfet
MC34066
SOLUTION FOR SMPS USING TL494
MOSFET ESD Rated
TL594 phone charger
car power inverter TL494
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pin diagram of ic 7480
Abstract: NHTS4101PT1 A114 JESD22 NCP346 NCP346SN1T1G NCP346SN2T1G
Text: NCP346 Overvoltage Protection IC The NCP346 overvoltage protection circuit OVP protects sensitive electronic circuitry from overvoltage transients and power supply faults when used in conjunction with an external P−channel FET. The device is designed to sense an overvoltage condition and
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NCP346
NCP346
NCP346/D
pin diagram of ic 7480
NHTS4101PT1
A114
JESD22
NCP346SN1T1G
NCP346SN2T1G
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NTA4151PT1G
Abstract: NTE4151PT1G NTA4151P NTA4151PT1 NTE4151P
Text: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package
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NTA4151P,
NTE4151P
SC-75,
SC-89
SC-75
NTA4151P/D
NTA4151PT1G
NTE4151PT1G
NTA4151P
NTA4151PT1
NTE4151P
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Untitled
Abstract: No abstract text available
Text: NCP346 Overvoltage Protection IC The NCP346 Overvoltage Protection circuit OVP protects sensitive electronic circuitry from overvoltage transients and power supply faults when used in conjunction with an external P−channel FET. The device is designed to sense an overvoltage condition and
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NCP346
NCP346
NCP346/D
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NHTS4101PT1
Abstract: No abstract text available
Text: NCP346 Overvoltage Protection IC The NCP346 Overvoltage Protection circuit OVP protects sensitive electronic circuitry from overvoltage transients and power supply faults when used in conjunction with an external P−channel FET. The device is designed to sense an overvoltage condition and
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NCP346
NCP346/D
NHTS4101PT1
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A114
Abstract: JESD22 NCP346 NCP346SN1T1G NCP346SN2T1G
Text: NCP346 Overvoltage Protection IC The NCP346 Overvoltage Protection circuit OVP protects sensitive electronic circuitry from overvoltage transients and power supply faults when used in conjunction with an external P−channel FET. The device is designed to sense an overvoltage condition and
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NCP346
NCP346
NCP346/D
A114
JESD22
NCP346SN1T1G
NCP346SN2T1G
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A114
Abstract: JESD22 NCP346 NCP346SN1T1G NCP346SN2T1G cell phone charger 5.7 V circuit diagram pin diagram of ic 7480 BY 235
Text: NCP346 Overvoltage Protection IC The NCP346 Overvoltage Protection circuit OVP protects sensitive electronic circuitry from overvoltage transients and power supply faults when used in conjunction with an external P−channel FET. The device is designed to sense an overvoltage condition and
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NCP346
NCP346
NCP346/D
A114
JESD22
NCP346SN1T1G
NCP346SN2T1G
cell phone charger 5.7 V circuit diagram
pin diagram of ic 7480
BY 235
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PORT marking sot-23-5
Abstract: MBRM120LT3 NCP345 NCP345SNT1 NCP345SNT1G car battery charger
Text: NCP345 Overvoltage Protection IC The NCP345 overvoltage protection circuit OVP protects sensitive electronic circuitry from overvoltage transients and power supply faults when used in conjunction with an external P−channel FET. The device is designed to sense an overvoltage condition and
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NCP345
NCP345
NCP345/D
PORT marking sot-23-5
MBRM120LT3
NCP345SNT1
NCP345SNT1G
car battery charger
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Untitled
Abstract: No abstract text available
Text: NTA4151P, NTE4151P Product Preview Small Signal MOSFET 20 V, 350 mA, Single P−Channel, Gate Zener, SC−75 & SC−89 http://onsemi.com Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm)
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NTA4151P,
NTE4151P
SC-75
SC-89
NTA4151P/D
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melf diode marking
Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish
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5KE100A-B
5KE100A-T
5KE100CA-B
5KE100CA-T
5KE10A-A
5KE10A-B
5KE10A-T
5KE10CA-B
5KE10CA-T
5KE110A-B
melf diode marking
A180-WLA
RS503s
SBR130S3
Schottky melf
hall sensor 35l
5KE91A-B
PR1005G-A
GBPC3504L
STPR2020CT
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NCP345
Abstract: MBRM120LT3 NCP345SNT1 NCP345SNT1G FET MARKING parallel MOSFET Transistors
Text: NCP345 Overvoltage Protection IC The NCP345 overvoltage protection circuit OVP protects sensitive electronic circuitry from overvoltage transients and power supply faults when used in conjunction with an external P−channel FET. The device is designed to sense an overvoltage condition and
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NCP345
NCP345
NCP345/D
MBRM120LT3
NCP345SNT1
NCP345SNT1G
FET MARKING
parallel MOSFET Transistors
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Untitled
Abstract: No abstract text available
Text: NCP345 Overvoltage Protection IC The NCP345 overvoltage protection circuit OVP protects sensitive electronic circuitry from overvoltage transients and power supply faults when used in conjunction with an external P−channel FET. The device is designed to sense an overvoltage condition and
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NCP345
NCP345
NCP345/D
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NTA4151P
Abstract: NTA4151PT1G NTA4151PT1 NTE4151P NTE4151PT1G
Text: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package
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NTA4151P,
NTE4151P
SC-75,
SC-89
SC-75
NTA4151P/D
NTA4151P
NTA4151PT1G
NTA4151PT1
NTE4151P
NTE4151PT1G
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dd 127 dd 127 d
Abstract: MOSFEt n channel for 800 volt 2 amp DD 127 D transistor gs 069 onsemi 035 zener diode NTA4151P NTA4151PT1G esd protect mosfet K 250 diode MARKING QG 6 PIN
Text: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package
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NTA4151P,
NTE4151P
SC-75,
SC-89
SC-75
NTA4151P/D
dd 127 dd 127 d
MOSFEt n channel for 800 volt 2 amp
DD 127 D transistor
gs 069
onsemi 035 zener diode
NTA4151P
NTA4151PT1G
esd protect mosfet
K 250 diode
MARKING QG 6 PIN
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Untitled
Abstract: No abstract text available
Text: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package
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NTA4151P,
NTE4151P
SC-75,
SC-89
SC-75
NTA4151P/D
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TRANSISTOR L 287 A
Abstract: 2SD2170 CE marking code diode sc-62
Text: 2SD2170 Transistor, NPN, Darlington pair Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2170; DM-*, where ★ is hFE code • built-in 90 J ” V Zener diode between collector and base • low fluctuation of Zener voltage
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2SD2170
OT-89,
SC-62)
2SD2170;
Para10
2SD2170
2SD2170,
TRANSISTOR L 287 A
CE marking code
diode sc-62
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lj marking sot23
Abstract: SOT23 marking sk lm4040 2.5 marking SK SOT23 sot-23 MARKING CODE SP lm4040
Text: PRECISION MICROPOWER BANDGAP SHUNT REFERENCE TEL: 805-498-2111 LM4040-2.5 FAX: 805-498-3804 SYMBOL FEATURES • Small SOT-23 package • Wide Operating Current Range 60pA to 150mA • Low Dynamic Output Impedance 0.8S2 Max. • Low Temperature Coefficient
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LM4040-2
OT-23
150mA
LM4040
OT-23
OT-89
lj marking sot23
SOT23 marking sk
lm4040 2.5
marking SK SOT23
sot-23 MARKING CODE SP
lm4040
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SOT23 marking sk
Abstract: sot-23 MARKING CODE SP marking sk sot-23 Zener Diode SOT-23 marking B
Text: PRECISI0N m ic r o p o w e r BANDGAp SHUNT REFERENCE TEL: 805-498-2111 FEATURES • Small SOT-23 package • Wide Operating Current Range 6 0 |jA to 150mA • Low Dynamic Output Impedance 0.8Q Max. • Low Temperature Coefficient <50 ppm/°C • Direct Replacement for LM4040
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LM4040-2
OT-23
150mA
LM4040
OT-23
SOT23 marking sk
sot-23 MARKING CODE SP
marking sk sot-23
Zener Diode SOT-23 marking B
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Untitled
Abstract: No abstract text available
Text: PRECISION MICROPOWER BANDGAP SHUNT REFERENCE TEL: 805-498-2111 LM4040-2.5 FAX : 805-498-3804 SYMBOL FEATURES • Small SOT-23 package • Wide Operating Current Range 60|jA to 150mA • Low Dynamic Output Impedance 0.8Q Max. • Low Temperature Coefficient
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LM4040-2
OT-23
150mA
LM4040
OT-23
OT-89
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TL431 sot89 marking
Abstract: TL431 SOT-23 sot-89 code markings sot-23 MARKING CODE SP marking SK sot-23 SOT23 marking sk Zener Diode SOT-89 025Q
Text: SEMTECH ADJUSTABLE SHUNT REGULATOR SC431 TEL: 805-498-2111 FEATURES FAX: 805-498-3804 SYMBOL Cathode • Wide Operating Current Range 60pA to 150mA • Low Dynamic Output Impedance 0.25Q Typ. • Low Temperature Coefficient <40 ppm/°C • Trimmed Bandgap Design ±0.25%
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SC431
150mA
TL431
OT-23
OT-89
SC431
TL431 sot89 marking
TL431 SOT-23
sot-89 code markings
sot-23 MARKING CODE SP
marking SK sot-23
SOT23 marking sk
Zener Diode SOT-89
025Q
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regulator lk
Abstract: No abstract text available
Text: g r v jT jg ^ n =3UVU u L ^ ± 3 ü -ü ADJUSTABLE SHUNT REGULATOR SC431 TEL: 805-498-2111 FAX : 805-498-3804 SYMBOL FEATURES Cathode • W ide Operating Current Range 60piA to 150m A • Low Dynamic Output Impedance 0.25Q Typ. • Low Temperature Coefficient
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SC431
60piA
forTL431
OT-23
OT-89
SC431
regulator lk
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Untitled
Abstract: No abstract text available
Text: R Æ ïïïM ^ = 3 PRECISION MICROPOWER BANDGAP SHUNT REFERENCE TEL: 805-498-2111 FAX : 805-498-3804 SYMBOL FEATURES • Small SOT-23 package • Wide Operating Current Range 60|jAto 150mA • Low Dynamic Output Impedance 0.8Q Max. • Low Temperature Coefficient
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OT-23
150mA
LM4040
OT-23
LM4040-2
EZ1082
EZ1083
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