Zener diode smd marking WE
Abstract: am 5890 smd marking cj4 smd marking ce5 Zener diode smd marking code am Ce1 marking diode CE5 marking Zener diode smd marking code 14 SMD cf5 smd marking ck2
Text: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount package,
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CMHZ5221B
CMHZ5267B
500mW,
OD-123
ELL-2KS400
CMHZ5242B
31-Aug-2010
Zener diode smd marking WE
am 5890
smd marking cj4
smd marking ce5
Zener diode smd marking code am
Ce1 marking diode
CE5 marking
Zener diode smd marking code 14
SMD cf5
smd marking ck2
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smd marking ce5
Abstract: Diode smd code sm Zener diode smd marking WE SMD cf5 SMD MARKING CODE CM5 Zener diode smd marking code am smd marking cj4 diode SMD CODE sm 17 smd diode marking sm 34 smd zener
Text: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount package,
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Original
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CMHZ5221B
CMHZ5267B
500mW,
OD-123
CMHZ5225B
OD-123
CMHZ5225B
CMPD2004S
smd marking ce5
Diode smd code sm
Zener diode smd marking WE
SMD cf5
SMD MARKING CODE CM5
Zener diode smd marking code am
smd marking cj4
diode SMD CODE sm 17
smd diode marking sm 34
smd zener
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zener diode n8
Abstract: Diode marking m7 N6 marking diode L9 Zener M7 zener zener n7 sod marking m7 n2 Diode Zener M7 zener diode CMOZ11L
Text: CMOZ1L8 THRU CMOZ47L SURFACE MOUNT LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package,
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CMOZ47L
250mW,
OD-523
CMOZ22L
CMOZ24L
CMOZ27L
CMOZ30L
CMOZ33L
CMOZ36L
CMOZ39L
zener diode n8
Diode marking m7
N6 marking diode
L9 Zener
M7 zener
zener n7
sod marking m7
n2 Diode Zener
M7 zener diode
CMOZ11L
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Zener diode MARKING H5
Abstract: marking code f4 DIODE h8 diode zener marking code f6 DIODE zener diode f7 diode marking code f6 CMOZ3V0 DIODE MARKING CODE H7 CMOZ5V6 diode marking code H5
Text: CMOZ2V4 THRU CMOZ43V SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package, designed for
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CMOZ43V
OD-523
300mW)
ELECTRCMOZ20V
CMOZ22V
CMOZ24V
CMOZ27V
CMOZ30V
CMOZ33V
CMOZ36V
Zener diode MARKING H5
marking code f4 DIODE
h8 diode zener
marking code f6 DIODE
zener diode f7
diode marking code f6
CMOZ3V0
DIODE MARKING CODE H7
CMOZ5V6
diode marking code H5
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CMHZ5265B
Abstract: CMHZ5228B CMHZ5229B marking code CJ4 CMHZ5221B CMHZ5222B CMHZ5223B CMHZ5224B CMHZ5225B CMHZ5226B
Text: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount package,
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Original
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CMHZ5221B
CMHZ5267B
500mW,
CMHZ5221B
OD-123
25-June
CMHZ5265B
CMHZ5228B
CMHZ5229B
marking code CJ4
CMHZ5222B
CMHZ5223B
CMHZ5224B
CMHZ5225B
CMHZ5226B
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cll5238b
Abstract: diode zener marking 58 CLL5221B CLL5222B CLL5223B CLL5224B CLL5225B CLL5226B CLL5227B CLL5228B
Text: Central CLL5221B THRU CLL5267B TM Semiconductor Corp. SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL5221B Series Silicon Zener Diode is a high quality voltage regulator designed for use in industrial,
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CLL5221B
CLL5267B
500mW,
CLL5221B
OD-80
200mA
CLL5261B
CLL5262B
CLL5263B
CLL5264B
cll5238b
diode zener marking 58
CLL5222B
CLL5223B
CLL5224B
CLL5225B
CLL5226B
CLL5227B
CLL5228B
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CMOZ13V
Abstract: No abstract text available
Text: CMOZ2V4C THRU CMOZ43VC SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 2% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4C Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package, designed
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CMOZ43VC
OD-523
300mW)
CMOZ20VC
CMOZ22VC
CMOZ24VC
CMOZ27VC
CMOZ30VC
CMOZ33VC
CMOZ36VC
CMOZ13V
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w11nk90z
Abstract: STW11NK90Z W11NK90 st mosfet JESD97
Text: STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STW11NK90Z 900V <0.98Ω 9.2A 200W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized
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STW11NK90Z
O-247
w11nk90z
STW11NK90Z
W11NK90
st mosfet
JESD97
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Untitled
Abstract: No abstract text available
Text: STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STW11NK90Z 900V <0.98Ω 9.2A 200W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized
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STW11NK90Z
O-247
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P12NK60
Abstract: F12NK60Z isd 1740 P12NK60Z JESD97 STF12NK60Z STP12NK60Z
Text: STP12NK60Z STF12NK60Z N-channel 650 V @Tjmax- 0.53 Ω - 10 A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A ID PW 35 W 3 3 • Extremely high dv/dt capability
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STP12NK60Z
STF12NK60Z
O-220
/TO-220FP
O-220FP
O-220
P12NK60
F12NK60Z
isd 1740
P12NK60Z
JESD97
STF12NK60Z
STP12NK60Z
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Untitled
Abstract: No abstract text available
Text: STN3N45K3 N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 3 Order code VDSS RDS on max ID Pw STN3N45K3 450 V <4Ω 0.6 A 3W • 100% avalanche tested • Extremely high dv/dt capability
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STN3N45K3
OT-223
OT-223
AM01476v1
DocID024888
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Untitled
Abstract: No abstract text available
Text: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z
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STP12NK60Z
STF12NK60Z,
STW12NK60Z
O-220,
O-220FP,
O-247
STF12NK60Z
O-220
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w12nk60z
Abstract: P12NK60Z STW12NK60Z isd 1740 F12NK60Z STF12NK60Z STP12NK60Z P12NK60
Text: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z
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STP12NK60Z
STF12NK60Z,
STW12NK60Z
O-220,
O-220FP,
O-247
STF12NK60Z
O-220
w12nk60z
P12NK60Z
STW12NK60Z
isd 1740
F12NK60Z
STF12NK60Z
STP12NK60Z
P12NK60
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d2536
Abstract: 2SD2536
Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)
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2SD2536
d2536
2SD2536
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Untitled
Abstract: No abstract text available
Text: 2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max)
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2SD2248
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D2248
Abstract: darlington transistor with built-in temperature c 2SD2248
Text: 2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max)
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2SD2248
D2248
darlington transistor with built-in temperature c
2SD2248
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Untitled
Abstract: No abstract text available
Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.2 V (max)
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2SD2536
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)
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2SD2536
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d2536
Abstract: 2SD2536
Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)
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2SD2536
d2536
2SD2536
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D2088 TRANSISTOR
Abstract: transistor D2088 D2088 2SD2088
Text: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2088
D2088 TRANSISTOR
transistor D2088
D2088
2SD2088
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D2088 TRANSISTOR
Abstract: D2088 Transistor D2088 2SD2088
Text: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2088
D2088 TRANSISTOR
D2088
Transistor D2088
2SD2088
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D2695 TRANSISTOR
Abstract: D2695 2SD2695
Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2695
D2695 TRANSISTOR
D2695
2SD2695
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D2088 TRANSISTOR
Abstract: D2088 transistor D2088 d2088 5-x
Text: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2088
D2088 TRANSISTOR
D2088
transistor D2088
d2088 5-x
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D2088 TRANSISTOR
Abstract: D2088 Transistor D2088 2SD2088
Text: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2088
D2088 TRANSISTOR
D2088
Transistor D2088
2SD2088
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