2V220
Abstract: Zener diode 18V SOD80 40V zener diode ZENER 1.8V SOD80 6V2 Zener Diode MZ0.5GN9V1 TMA 1900 5GE2V0-20 27v 103 d zener diode SOD-80 Marking Code
Text: ZENER DIODE MZ0.5GE2V0-20 THRU MZ0.5GE75V-1.7 MZ0.5GN SERIES MZ0.5GE2V THRU MZ0.5GE75V TECHHICAL SPECIFICATION MINI MELF FEATURES • • • • • Silicon Planar Power Zener Diodes The zener voltages are graded according to the International E24 standard smaller voltage smaller
|
Original
|
5GE2V0-20
5GE75V-1
5GE75V
OD-80)
2V220
Zener diode 18V SOD80
40V zener diode
ZENER 1.8V SOD80
6V2 Zener Diode
MZ0.5GN9V1
TMA 1900
27v 103 d zener diode
SOD-80 Marking Code
|
PDF
|
2V220
Abstract: 40V zener diode DO-35 5V1 2V2-20 4v3 zener diode 5V6 DIODE 6V2 Zener Diode diode zener 8v2 TMA 1900 Zener 6.8v .5mA
Text: ZENER DIODE MZ0.5GE2V0-20 THRU MZ0.5GE75V-1.7 MZ0.5GF SERIES MZ0.5GE2V THRU MZ0.5GE75V TECHHICAL SPECIFICATION DO-35 FEATURES • • • • • Silicon Planar Power Zener Diodes Standard Zener Voltage Tolerance is ±5% DO-34 Glass Case High Reliability Weight: Approx. 0.12g
|
Original
|
5GE2V0-20
5GE75V-1
5GE75V
DO-35
DO-34
2V220
40V zener diode
DO-35 5V1
2V2-20
4v3 zener diode
5V6 DIODE
6V2 Zener Diode
diode zener 8v2
TMA 1900
Zener 6.8v .5mA
|
PDF
|
current limiting diodes
Abstract: constant current diode CCL1000 CCL0035 CCL5750 "Constant Current diode"
Text: What is a Current Limiting Diode? Outline below are typical CLD Characteristics, Symbols, Parameters and Definitions. A Current Limiting Diode, also known as a “Current Regulating Diode” or a “Constant Current Diode”, performs quite a unique function. Similar to a zener diode,
|
Original
|
90-second
current limiting diodes
constant current diode
CCL1000
CCL0035
CCL5750
"Constant Current diode"
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BZV55B2V4 ~ BZV55B75 Taiwan Semiconductor Small Signal Product 500mW, 2% Tolerance Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 75V - VZ Tolerance Selection of ±2% - Hermetically sealed glasss - Pb free and RoHS compliant - High reliability glass passivation insuring parameter
|
Original
|
BZV55B2V4
BZV55B75
500mW,
DO-213AC)
270oC/10s
S1403001
|
PDF
|
BZV55C4V3
Abstract: BZV55C6V2 BZV55C12 BZV55C15
Text: BZV55C2V4 - BZV55C75 CREAT BY ART 500mW, 5% Tolerance Zener Diode Small Signal Product Mini-MELF LL34 Hermetically Sealed Glass Features ◇ Wide zener voltage range selection : 2.4V to 75V ◇ VZ Tolerance Selection of ±5% ◇ Designed for through-hole device type mounting
|
Original
|
BZV55C2V4
BZV55C75
500mW,
DO-213AC)
270oC/10s
BZV55C4V3
BZV55C6V2
BZV55C12
BZV55C15
|
PDF
|
BZV55C4V3
Abstract: BZV55C6V2 BZV55C12 BZV55C15
Text: BZV55C2V4 thru BZV55C75 Taiwan Semiconductor Small Signal Product 5% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of ±5% - Hermetically sealed glasss - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
|
Original
|
BZV55C2V4
BZV55C75
DO-213AC)
270oC/10s
S1408008
BZV55C4V3
BZV55C6V2
BZV55C12
BZV55C15
|
PDF
|
BZV55C4V3
Abstract: BZV55C6V2 BZV55C12 BZV55C15
Text: BZV55C2V4 - BZV55C75 CREAT BY ART 500mW, 5% Tolerance Zener Diode Small Signal Product Features Mini-MELF LL34 ◇ Wide zener voltage range selection : 2.4V to 75V Hermetically Sealed Glass ◇ VZ Tolerance Selection of ±5% ◇ Designed for through-hole device type mounting
|
Original
|
BZV55C2V4
BZV55C75
500mW,
DO-213AC)
270oC/10s
S1308006
BZV55C4V3
BZV55C6V2
BZV55C12
BZV55C15
|
PDF
|
gate-source zener
Abstract: p-channel 200V TC6320 TC6320TG high voltage pulser
Text: TC6320 Initial Release N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description Integrated gate-source resistor Integrated gate-source zener diode Low threshold
|
Original
|
TC6320
TC6320TG
-150mA
-200mA
gate-source zener
p-channel 200V
TC6320
high voltage pulser
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Process Introduction 4um / 25V Bipolar Process Technology Process features z z z z z z z z z z z Key Design Rules Single isolation Deep N+ collector plug NPN transistor Lateral PNP transistor Vertical substrate PNP transistor Zener diode Implant Resistor (optional)
|
Original
|
18x18
100uA)
100x100um2)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
|
Original
|
2SK2166-01R
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
|
Original
|
2SK1969-01
|
PDF
|
2SK2166-01R
Abstract: No abstract text available
Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
|
Original
|
2SK2166-01R
2SK2166-01R
|
PDF
|
2SK2165-01
Abstract: No abstract text available
Text: 2SK2165-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
|
Original
|
2SK2165-01
2SK2165-01
|
PDF
|
2SK1969-01
Abstract: No abstract text available
Text: 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
|
Original
|
2SK1969-01
2SK1969-01
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 2SK2165-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
|
Original
|
2SK2165-01
|
PDF
|
2SK2166
Abstract: No abstract text available
Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
|
Original
|
2SK2166-01R
2SK2166
|
PDF
|
Power MOSFET Wafer
Abstract: 2N7002E zener wafer
Text: 3VD040060NEJL 3VD040060NEJL STRUCTURE N-CH MOSFET CHIPS WITH ESD PROTECTED DESCRIPTION Ø 3VD040060NEJL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Zener diode ESD protected up to 1000V HBM Ø
|
Original
|
3VD040060NEJL
3VD040060NEJL
OT-23
2N7002E.
Power MOSFET Wafer
2N7002E
zener wafer
|
PDF
|
2SK1822-01M
Abstract: No abstract text available
Text: 2SK1822-01M N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,07Ω 20A 35W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
|
Original
|
2SK1822-01M
2SK1822-01M
|
PDF
|
2SK2259-01MR
Abstract: No abstract text available
Text: 2SK2259-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15
|
Original
|
2SK2259-01MR
O-220F15
2SK2259-01MR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: What is a Current Lim iting Diode? Outlined below are typical CLD Characteristics, Symbols, Parameters, and Definitions. A Current Limiting Diode, also known as a "Current Regu lating Diode” or a "Constant Current Diode," performs quite a unique function. Sim ilar to a zener diode, which
|
OCR Scan
|
90-second
|
PDF
|
U180
Abstract: ST02-33G1 VE-25V zener smd diode 3.3v 1w ST02
Text: /j'SäüSHnr/uz mw Power zener Diode Small Surface Mount Device Single Zener Diode • ftM U ! OUTLINE ST02-33G1 33V 200W ftft ■ ■ /j\g ü s iv D Feature ■ 1W Class ■ Small SMD ■ Available for automotive use £v 'T ffi&EPttfilSr ¿5v For details of outline dimensions, refer to our web site or the
|
OCR Scan
|
ST02-33G1
1001-r
100kHz
wavefi50HzT-Â
U180
ST02-33G1
VE-25V
zener smd diode 3.3v 1w
ST02
|
PDF
|
constant current diode
Abstract: current limiting diode
Text: What is a Current Limiting Diode? Outlined below are typical CLD Characteristics, Symbols, Parameters, and Definitions. A Current Limiting Diode, also known as a "Current Regu lating D iode” or a "Constant Current Diode," performs quite a unique function. Similar to a zener diode, which
|
OCR Scan
|
90-second
constant current diode
current limiting diode
|
PDF
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
PDF
|
LM78L05CT
Abstract: LM78L00 Series
Text: iJfQ rnN|M LM78L00 Series 3-Terminal Low Current Positive Voltage Regulators required with the LM78L00 devices in many applications. These devices offer a substantial performance advantage over the traditional zener diode-resistor combination, as output impedance and quiescent
|
OCR Scan
|
LM78L00
LM7800
LM79L00
LM78L05CTAGE
-40mA
LM78L05CT
LM78L00 Series
|
PDF
|
