VB-2510
Abstract: s 6352 GB 2510 zener 6352
Text: Datasheet Shunt-Diode Barrier 0359 Description The SenGenuity Shunt-Diode Barrier is an intrinsically safe zener diode safety barrier which limits excessive energy into a hazardous location. The barrier is designed to be used in conjunction with a SenGenuity VC-2xxx Series Converter and SenGenuity VS-25xx Series
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VS-25xx
200mA
VB-2510
s 6352
GB 2510
zener 6352
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BYW100-100
Abstract: CFL lamp 100NF 630V L6569 L6569A L6569AD L6569D irf 146 diode 1N4006 specifications PTC 15 T 630V
Text: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY INTERNAL BOOTSTRAP DIODE STRUCTURE 15.6V ZENER CLAMP ON VS DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA
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L6569
L6569A
270mA
170mA
L6569D
L6569AD
BYW100-100
CFL lamp
100NF 630V
L6569
L6569A
L6569AD
L6569D
irf 146
diode 1N4006 specifications
PTC 15 T 630V
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IR2156 application
Abstract: C 13 PH Zener diode zener diode ph 48 C 12 PH Zener diode cfl circuit diagram of 12 volts IR2156 ZENER DIODE PH 5.1V IR2156S 12v ballast ic 1N4007
Text: Data Sheet No. PD60182-I IR2156 S & (PbF) BALLAST CONTROL IC • Programmable dead time • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc • Micropower startup (150µA) • Latch immunity and ESD protection
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PD60182-I
IR2156
14-Lead
IR2156
IR2156S
IR2156S
IR2156 application
C 13 PH Zener diode
zener diode ph 48
C 12 PH Zener diode
cfl circuit diagram of 12 volts
ZENER DIODE PH 5.1V
12v ballast ic
1N4007
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Untitled
Abstract: No abstract text available
Text: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY INTERNAL BOOTSTRAP DIODE STRUCTURE 15.6V ZENER CLAMP ON VS DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA
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L6569
L6569A
270mA
170mA
L6569D
L6569AD
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C 11 PH Zener diode
Abstract: No abstract text available
Text: Data Sheet No. PD60182-I IR2156 S & (PbF) BALLAST CONTROL IC Features • • • • • • • Programmable dead time • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc • Micropower startup (150µA)
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PD60182-I
IR2156
14-Lead
IR2156
IR2156S
IR2156S
C 11 PH Zener diode
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cmos 555 timer
Abstract: IRFC214 IR2151 IR51HD214
Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.058D IR51HD214 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation
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IR51HD214
cmos 555 timer
IRFC214
IR2151
IR51HD214
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IR2151
Abstract: IR51HD224 zener diode 20w
Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.059D IR51HD224 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation
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IR51HD224
IR2151
IR51HD224
zener diode 20w
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half-bridge
Abstract: high speed bridge rectifier IR2151 IR51HD224 mosfet Vcc 250v
Text: Data Sheet No. PD-6.059D IR51HD224 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package
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IR51HD224
IR51HD224
half-bridge
high speed bridge rectifier
IR2151
mosfet Vcc 250v
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IR2151
Abstract: IR51HD214 IRFC214
Text: Data Sheet No. PD-6.058D IR51HD214 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package
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IR51HD214
IR51HD214
IR2151
IRFC214
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IR2151
Abstract: IR51H224
Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.059D IR51H224 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation
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IR51H224
IR51H224
IR2151
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555 timer datasheet
Abstract: bridge rectifier ic 6V bridge rectifier ic Data sheet of a bridge rectifier IC high frequency Self-Oscillating Self-Oscillating IR51H214 mosfet Vcc 250v IR Half-bridge
Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.058D IR51H214 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation
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IR51H214
IR51H214
555 timer datasheet
bridge rectifier ic
6V bridge rectifier ic
Data sheet of a bridge rectifier IC
high frequency Self-Oscillating
Self-Oscillating
mosfet Vcc 250v
IR Half-bridge
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cmos 555 timer
Abstract: IR2151 IR51H224
Text: Data Sheet No. PD-6.059D IR51H224 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs
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IR51H224
IR51H224
cmos 555 timer
IR2151
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PD-60083H
Abstract: No abstract text available
Text: Preliminary Data Sheet No. PD-60083H IR51H D XXX (NOTE: For new designs, we recommend IR’s new products IR53H(D)XXX) SELF-OSCILLATING HALF BRIDGE Features Product Summary • • • • VIN (max) 250V - H(D)214/224 300V - H(D)737 400V - H(D)310/320 500V - H(D)420
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PD-60083H
IR51H
IR53H
PD-60083H
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ls bridge rectifier
Abstract: high frequency Self-Oscillating IR51H214
Text: Data Sheet No. PD-6.058D IR51H214 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs
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IR51H214
IR51H214
ls bridge rectifier
high frequency Self-Oscillating
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STS1C1S250
Abstract: Zener Diode B1 9
Text: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω
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STS1C1S250
STS1C1S250
Zener Diode B1 9
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zener diode B5
Abstract: STD3PS25 STD3PS25-1
Text: STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY MOSFET TYPE STD3PS25 STD3PS25-1 • ■ ■ ■ ■ VDSS RDS on ID 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A TYPICAL RDS(on) = 2.1Ω 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
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STD3PS25
STD3PS25-1
STD3PS25
zener diode B5
STD3PS25-1
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W52NK25Z
Abstract: No abstract text available
Text: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW52NK25Z
O-247
W52NK25Z
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w52nk25z
Abstract: STW52NK25Z zener diode - C 10 ST st 0560
Text: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW52NK25Z
O-247
w52nk25z
STW52NK25Z
zener diode - C 10 ST
st 0560
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STP22NS25Z
Abstract: L9 Zener STB22NS25Z a88a
Text: STP22NS25Z STB22NS25Z N-CHANNEL 250V - 0.13Ω - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY MOSFET TYPE STP22NS25Z STB22NS25Z • ■ ■ VDSS RDS on ID 250 V 250 V < 0.15 Ω < 0.15 Ω 22 A 22 A TYPICAL RDS(on) = 0.13 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STP22NS25Z
STB22NS25Z
O-220/D2PAK
O-220
STP22NS25Z
L9 Zener
STB22NS25Z
a88a
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-6.059D IR51HD224 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Bootstrap diode integrated into package
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IR51HD224
IR51HD224
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resistor BJE
Abstract: No abstract text available
Text: Data Sheet No. PD-6.058D I R 5 1 H D 2 1 4 SELF-OSCILLATING HALF-BRIDGE Features Product Summary • Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Bootstrap diode integrated into package
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IR51HD214
resistor BJE
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-6.058D IR51H214 SELF-OSCILLATING HALF-BRIDGE Features Product Summary • Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs
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IR51H214
IR51H214
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bje resistor
Abstract: resistor BJE
Text: Data Sheet No. PD-6.059D nterna! fona Rectifier IR51H224 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs
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IR51H224
IR51H224
bje resistor
resistor BJE
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