d-y59a
Abstract: SMC D-B73C D-A59W double diode 5341 dh7a1 zener 48v D-J59 DIODE ZENER X ZENER A34 D-H7A1
Text: Fonction Page 5.3-1 D–C7/C8 D–C73C/C80C D–B5/B6 D–B59W D–A3/A4 D–A3A/A44A D–A3C/A44C D–A7/A8 D–A7H/A80H D–A73C/A80C D–A79W D–A5/A6 D–A59W D–A9/A9V D–9/9A D–E7A/E80A D–Z7/Z8 D–H7 D–H7C D–H7BAL D–H7F D–H7W
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C73C/C80C
A3A/A44A
A3C/A44C
A7H/A80H
A73C/A80C
E7A/E80A
G5W/K59W
G39/K39
G39A/K39A
F5W/J59W
d-y59a
SMC D-B73C
D-A59W
double diode 5341
dh7a1
zener 48v
D-J59
DIODE ZENER X
ZENER A34
D-H7A1
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Untitled
Abstract: No abstract text available
Text: , One, TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 STP12NK80Z - STB12NK80Z STW12NK80Z N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP12NK80Z
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STP12NK80Z
STB12NK80Z
STW12NK80Z
O-220
O-247
STP12NK80Z
O-220
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diode ZENER 927
Abstract: S78L09
Text: S78L09 3-Terminal Elektronische Bauelemente Positive Voltage Regulator TO-92 D Description E S1 A The S78L09 series of surface mount device regulators are easy-to-use devices suitable for multitude of applications that require a regulated supply of up to 100mA. These regulators
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S78L09
S78L09
100mA.
100mA
100KHz,
120Hz
01-Jun-2002
diode ZENER 927
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Untitled
Abstract: No abstract text available
Text: INTRINSIC SAFETY HAZARDOUS AREA 3 INTRODUCTION Intrinsically safe equipment is defined as “equipment and wiring which is incapable of releasing sufficient electrical or thermal energy under normal or abnormal conditions to cause ignition of a specific hazardous
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ISA-RP12
K-104
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ZENER DIODE E1
Abstract: e1 zener diode ZENER A1 zener DIODE marking A1 marking KDL "device marking" IR 106 zener
Text: AZ23CxW Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 5.6 to 18 Volts POWER DISSIPATION – 0.2 Watts FEATURES SOT-323 • Dual zeners in common anode configuration • 200mW power dissipation rating • Ideal For Transient Suppression • △Vz for both diodes in one case is ≤5%
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AZ23CxW
OT-323
OT-323
200mW
J-STD-020D
2002/95/EC
AZ23C5V6W
AZ23C6V8W
AZ23C10W
ZENER DIODE E1
e1 zener
diode ZENER A1
zener DIODE marking A1
marking KDL
"device marking"
IR 106 zener
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Untitled
Abstract: No abstract text available
Text: SELECTION GUIDE FOR OMEGA ZENER BARRIERS FOR INTRINSIC SAFETY MADE IN FM USA APPROVED OMEGA® SOLID STATE RELAYS AND ZENER BARRIERS FOR INTRINSIC SAFETY The maximum energy possible at the switch terminals of the OMEGA® Zener Barriers is far below the explosive point of the most
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K-110
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zener diodes 1N serie
Abstract: 957b IN981B bzx96 IN4370 1N4371 bzx 96 ZENER bzx 46 c 20 969B ZENER bzx 46 c
Text: zener diodes diodes zener Types v z t / iz t * nom V THOMSON-CSF 'ZT/IZT* >ZT max Ci) Im AI rZK / IZK max (0) (mA) 400 m W / Tam b = 50°C Tj m ax = 175°C 1N 4370 1N4371 1N 4372 1N 746 1N 747 1N 748 1N 749 1N 750 1N 751 1N 752 1N 753 1N 754 1N 755 1N 756
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1N4371
zener diodes 1N serie
957b
IN981B
bzx96
IN4370
bzx 96
ZENER bzx 46 c 20
969B
ZENER bzx 46 c
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BZV 400
Abstract: bzv 06 bzv 400 5v6 k3 bzv 46 bzv 4v7 bzv 40 zener 6v8 CB-210 47c36 ZENER DIODES BZV 40 C 8V2
Text: zener diodes diodes zener Types THOMSON-CSF Vz t /Iz t * m in m ax V T Z T /'Z T m ax 'Z T ocvz typ Ir /V r m ax Vr •ZM Ci) (m A ) (% /°C ) (nA) (V) (m A ) 2 W / Tamb = 50°C Tj max = 175°C BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47
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05Z5.1
Abstract: zener rd
Text: TOSHIBA b7 { D I S C R E T E / O P T 0> 9097250 - TOSHIBA DISCRETE/OPTO - DE | ci D ci 7 2 S D 67C OOCHSûE 09282 1 D S ilic o n P la n a r T y p e Z e n e r D io d e 0 5 Z 2 7 - 0 5 Z 1 0 0 Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS. REFERENCE VOLTAGE APPLICATIONS.
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500mW
Q050D
05Z5.1
zener rd
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1N series ZENER DIODE 5 to 10 volt watt
Abstract: 1n2007 diode 1N2621 IN2049 zener diode 1N961 939B IN2806 in825 IN946 1N938
Text: 5 5 5 5 S S CO 9 O r-i CM CO W V CO CO ^ ^ ^ ^ O l O ' 01 z z z H H oí oí oi O ' O ' O ' z z z z z z H H H h ri h i o o o OOO o o o in in in 500.0 500.0 500.0 125.0 150.0 185.0 230.0 270.0 330.0 400.0 500.0 750.0 900.0 1100.0 1500.0 1700.0 2200.0 2500.0
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1N938Ã
1N939Ã
1N940I2)
1N94K2)
1N942I2)
1N943I2)
1N944I2
1N94512)
1N946I2)
1N957
1N series ZENER DIODE 5 to 10 volt watt
1n2007 diode
1N2621
IN2049
zener diode 1N961
939B
IN2806
in825
IN946
1N938
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1N958 zener diode
Abstract: zener diode 1N961 1N965 zener diode 1N1313 IN946 1N938 1N939 1N957 1N958 diode zener 1N985
Text: O l O ' 01 z z z H H H 5 5 5 5 S S CO 9 O r-i CM CO W V CO CO ^ ^ ^ ^ oí oí oi O ' O ' O ' z z z z z z H H h ri h Diode i 0.20 0.80 0.68 0.65 o o o OOO o o o in in in 500.0 500.0 500.0 125.0 150.0 185.0 230.0 270.0 330.0 400.0 500.0 750.0 900.0 1100.0
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1N938Ã
1N939Ã
1N940I2)
1N94K2)
1N942I2)
1N943I2)
1N944I2
1N94512)
1N946I2)
1N957
1N958 zener diode
zener diode 1N961
1N965 zener diode
1N1313
IN946
1N938
1N939
1N958
diode zener 1N985
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1N935
Abstract: 1N9398 1N935A 1N935B 938B 939B 55945 938B diode
Text: 1N 935 thru 11M940B Microsemi Corp. 9.0 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES FEATURES • Z E N E R V O L T A G E 9.0V • 1N935B, 937B, 938B, 939B, 940B H A V E JA N , J A N T X , A N D J A N T X V Q U A LIF IC A T IO N S TO MIL-S-19500/156
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1N935
1IN940B
1IM935B,
S1N939A
1N935
1N9398
1N935A
1N935B
938B
939B
55945
938B diode
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05Z5.1
Abstract: irf 1820 Irf 1540 N 05Z5.6 05Z12Y 05Z6.2 05Z12 05Z16 05Z6.8 05Z5.6Y
Text: b7 TOSHIBA { DI SCRET E/ OP TO } 9097250 T O SH I BA dF D IS C R E TE/OPTO > 05Z5.1 -05Z24 I tchtesd 67C 09277 .* oocna? a 1 ~ 0 T ' / / ‘// • Silicon Planar Type Zener Diode Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS. REFERENCE VOLTAGE APPLICATIONS.
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-05Z24
500mW
DO-35
BO-40
05Z5.1
irf 1820
Irf 1540 N
05Z5.6
05Z12Y
05Z6.2
05Z12
05Z16
05Z6.8
05Z5.6Y
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1N725
Abstract: 1N937 1N743 IN821 in825 1N717 1N718 1N719 1N721 1N722
Text: 0Os" vO0s OU O V . X S o '' c S ov' d ' - i ' ' 5^0? in in in <\l C\J CM ¡1 II S. 999 5: x =3 £= = 2= C/> V O CO * uE £ =£ o o o «Si -g< = > ro in C CM CO »3- o OO O q o ° o o o odd o o o «5SO o o o NÛ-? o r s in o O o t— I— h- G O O O O O O \ 0 O'-
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1N717
1N718
1N719
DO-7/DO-35
1N721
1N722
1N723
1N725
1N726
1N727
1N937
1N743
IN821
in825
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N6030
Abstract: diode 1n60
Text: 1N5985 thru 1N6031 Micro/semi Corp. f The dxxte experts SCOTTSDALE, A Z F or more inform ation call: 602 941-6300 FEATURES • Popular DO-35 P ac k a g e — Sm all and Rugged ■ Double Slug Construction ■ Constructed w ith an Oxide Passivated All Diffused Die
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1N5985
1N6031
DO-35
100mA:
N6030
diode 1n60
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1N3812
Abstract: 1N3685 1N3702 1N3707 1N3678 1N3679 1N3680 1N3681 1N3682 1N3683
Text: Zener Type No. Max. Zener Impedance @ Ut Ohms Zener Voltage Tolerance No Suffix = 2 0 % Suffix A =i 1 0 % Suffix B = 5 % /, „ 9.1 10.0 11.0 14.0 12.5 11.5 7.5 8.5 9.5 12.0 13.0 15.0 10.5 9.5 8.5 11.5 13.0 16.0 16.0 18.0 20.0 7.8 7.0 6.2 1N3087 1N3688 1N3689
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1N3678
1N3679
1N3680
1N3681
1N3682
1N3683
1N3684
1N3685
1N3686
1N3687
1N3812
1N3702
1N3707
1N3680
1N3683
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1N1318
Abstract: 1N1323 zener diode 1N961 1N1313 1N1356 IN946 1N938 1N939 1N957 1N958
Text: z z z zHoí Hzoí zHoi hOz ' rOzi' hzO ' H H H CO 9 O CO CO ^ O l O ' 01 r-i CM CO ^ ^ ^ 5 S S W V I cm ooo H Hró inrl cm cm co ooo ooo ooo ooo CO CO fO co co *5 150m w 10 watt Suffix A = 5% No Suffix z_ 10% Suffix A = 5% Suffix R = Rev. Polarity Diode typos presently available from Microsemi Corporation are shown in bold type.
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1N938Ã
1N939Ã
1N940I2)
1N94K2)
1N942I2)
1N943I2)
1N944I2
1N94512)
1N946I2)
1N957
1N1318
1N1323
zener diode 1N961
1N1313
1N1356
IN946
1N938
1N939
1N958
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1N2007
Abstract: 1N734 C0D CK IN277 IN759 IN821 in823 IN753 ln2004 1N719
Text: 0s" vO O 0s OUO V . X S S. C=/>2= V o d d o O o GOO a o o t—I—h- HHH i—I—i— o o o o o o o o o o o d d rt cd in o o o o NÛ-? rs 00 Cl ^ od in c\i in • o» C CM CO »3- o o o odd o o o o rs in «5SO ooo h- I— I— OOO q o ° o o o o o o o o 9 9 9 o o o o o o o 9 9 9 0 0 9 0 9
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1N717
1N718
1N719
DO-7/DO-35
1N721
1N722
1N723
1N725
1N726
1N727
1N2007
1N734
C0D CK
IN277
IN759
IN821
in823
IN753
ln2004
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1n728 DO-4
Abstract: in823 IN751 in822 mic in2829 1N2163 1N8272 1N736 in821a in823a
Text: V . X S ¡1 II *< 5: x =3£= tt — « S. =/>2= C V 999 Il C O 't r s o o o o o o o o o o o d d r t cd in o od in c\i in r s 00 C l ^ C SË i II o o o NÛ-? o o o OOO q o ° odd o o o «5SO 00 O'. CM cm o r s in t—I CM CM a> r s •-i in o o o o o o n i co o
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1N717
1N718
1N719
DO-7/DO-35
1N721
1N722
1N723
1N725
1N726
1N727
1n728 DO-4
in823
IN751
in822 mic
in2829
1N2163
1N8272
1N736
in821a
in823a
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1n2007 diode
Abstract: ZENER DIODE 1N2005 1n2007 application note diode 1n2007 in2004 1N2034 1n2002 1N1948 1N1949 1N1952
Text: CASE CONFIGURATION CHART CASE CONFIGURATION CHART Cas« Q t - 0 21V0-26S S,4*1/*.731 | 0 026/0.035 L V « I K 2.70« jl!.t i R rm .I a LEADS 0.03a ± 0 9C3 ; | 4 | | MAX - H O.WMUM ^ 0.315 L L 11.1 * i S« I ' Case S Case T X 1 M t 0.375 ± 0.010. «.US * 0,25*
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1N1948
1N1949
2N1950
1N1951
1N1952
1N1953
1N1954
1N1980
200mw
1N1981
1n2007 diode
ZENER DIODE 1N2005
1n2007 application note
diode 1n2007
in2004
1N2034
1n2002
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1S1618
Abstract: IN987B do-7 diode iss IN987 IN9778 ic 957B SJ 76 A DIODE EMI
Text: niCROSEMI CORP 25E D bllSäbS QGOQTbfl fl 1N957B thru 1N992B DO-7 emi Corp. Th§'0KX/^9M0trtS SCOTTSDALE, AZ SANTA ANA, CA For more information calk 602 941-6300 FEATURES T - t h t f SILICON 400 mW ZENER DIODES • 6.8 TO 200V ZENER VOLTAGE RANGE • 1N962B THRU 1N992B HAVE JAN, JANTX AND JANTXV QUALIFICATIONS
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1N957B
1N992B
1N962B
MIL-S-195Q0/117
1N973B
1NJ57Í
1N93I«
1N9S08
1H961B
1S1618
IN987B
do-7 diode iss
IN987
IN9778
ic 957B
SJ 76 A DIODE EMI
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1N1313
Abstract: zener diode 1N961 IN946 IN961 RH944 1N938 1N939 1N957 1N958
Text: 5 5 5 CO 9 O CO CO ^ O l O ' 01 z z z 5 S S r-i CM CO W V ^ ^ ^ oí oí oi O ' O ' O ' z z z z z z H H H h ri h CM *T i 0.20 0.80 0.68 0.65 o o o OOO o o o in in in 500.0 500.0 500.0 30.0 30.0 30.0 i I Zener Voltage Tolerance No Suffix = 2 0 % Suffix A = 1 0 %
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1N938Ã
1N939Ã
1N940I2)
1N94K2)
1N942I2)
1N943I2)
1N944I2
1N94512)
1N946I2)
1N957
1N1313
zener diode 1N961
IN946
IN961
RH944
1N938
1N939
1N958
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TVS 36C
Abstract: ICR22 ICR12 ICR18 ict-5 diode ICT-10 ICT-15C ICT-18C ICT-22C ICT-36
Text: T ra n s ie n t V oltag e S u p p re s s io n TV S D io d e s ,1 C T -5 C T-45C O Y O O M Control overpower FEATURES fim s ib fe P rotection 31.8 min. 5.33 max. : 7.5 9.Q lr T 25.4 mir». When no problems exist, Oyctoiri TVS Q a s s passivated junction Diodes are totally invisible to the circuits
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1500watt
TVS 36C
ICR22
ICR12
ICR18
ict-5 diode
ICT-10
ICT-15C
ICT-18C
ICT-22C
ICT-36
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Untitled
Abstract: No abstract text available
Text: TD62501F-TD62507F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC SINGLE DRIVE TD62501F TD62502F TD62503F TD62504F TD62505F TD62506F TD62507F 16 9 RBRHflflRB o y y ü üy Bhe Features . Output Current . 200mA Max. . High Voltage Outputs . 35V
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TD62501F-TD62507F
TD62501F
TD62502F
TD62503F
TD62504F
TD62505F
TD62506F
TD62507F
200mA
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