Untitled
Abstract: No abstract text available
Text: BZX79C Series Zener diode Features High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature
|
Original
|
PDF
|
BZX79C
1-Jan-2006
|
Untitled
Abstract: No abstract text available
Text: BZX79B Series Zener diode Features High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature
|
Original
|
PDF
|
BZX79B
1-Jan-2006
|
BZX79B
Abstract: zener diode BZ 55 diode zener 5V1 BZX zener diode BZ 56 BZX 9V1 marking 3f zener diode BZ 250
Text: BZX79B Series Zener diode Features High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol Value
|
Original
|
PDF
|
BZX79B
Character-2008
1-Jun-2008
DO-35
zener diode BZ 55
diode zener 5V1 BZX
zener diode BZ 56
BZX 9V1
marking 3f
zener diode BZ 250
|
BZX79C
Abstract: zener diode BZ 55 DIODE BZX 24 79c zener diode BZ 56 diode zener 5v1 79c zener diode BZ 168 BZX79C 3V3 BZX79C 15 79C5V1 BZ 85 58 zener diode
Text: BZX79C Series Zener diode Features High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol Value
|
Original
|
PDF
|
BZX79C
Character-2008
1-Jun-2008
DO-35
zener diode BZ 55
DIODE BZX 24 79c
zener diode BZ 56
diode zener 5v1 79c
zener diode BZ 168
BZX79C 3V3
BZX79C 15
79C5V1
BZ 85 58 zener diode
|
Untitled
Abstract: No abstract text available
Text: BZX79B Series Zener diode Features High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol
|
Original
|
PDF
|
BZX79B
1-Nov-2006
DO-35
|
zener gdzj4.3a series
Abstract: No abstract text available
Text: BZX79C Series Zener diode Features High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature
|
Original
|
PDF
|
BZX79C
1-Jun-2004
BZX79
zener gdzj4.3a series
|
zener BZX 96
Abstract: No abstract text available
Text: BZX79C Series Zener diode Features High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol
|
Original
|
PDF
|
BZX79C
1-Nov-2006
DO-35
zener BZX 96
|
bzx83 5v1
Abstract: BZX83 5v6
Text: BZX83C Series Zener diode Features High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature
|
Original
|
PDF
|
BZX83C
1-Jun-2004
BZX83
bzx83 5v1
BZX83 5v6
|
BZX 5.1v
Abstract: No abstract text available
Text: BZX55B Series Zener diode Features Vz-tolerance ±2% Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature
|
Original
|
PDF
|
BZX55B
200mA
1-Jun-2004
BZX55
BZX 5.1v
|
Untitled
Abstract: No abstract text available
Text: BZX55C Series Zener diode Features High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature
|
Original
|
PDF
|
BZX55C
200mA
1-Jul-2004
BZX55
|
BZX83C
Abstract: Zener diode 83C 12 BZX83-C Series Zener diode 83C 24 BZ DO-35 ZENER bzx83c 3v3 bzx8
Text: BZX83C Series Zener diode Features High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol Value
|
Original
|
PDF
|
BZX83C
1-Jun-2008
DO-35
Zener diode 83C 12
BZX83-C Series
Zener diode 83C 24
BZ DO-35
ZENER bzx83c 3v3
bzx8
|
Untitled
Abstract: No abstract text available
Text: BZX55B Series Zener diode Features Vz-tolerance ±2% Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature
|
Original
|
PDF
|
BZX55B
200mA
1-Jan-2006
|
Untitled
Abstract: No abstract text available
Text: BZX83C Series Zener diode Features High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature
|
Original
|
PDF
|
BZX83C
1-Jan-2006
|
Untitled
Abstract: No abstract text available
Text: BZX55B Series Zener diode Features Vz-tolerance ±2% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol
|
Original
|
PDF
|
BZX55B
1-Nov-2006
DO-35
|
|
BZX83B
Abstract: BZX83C bzx 550 4v7 Zener diode 83C 24
Text: BZX83C Series Zener diode Features High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol
|
Original
|
PDF
|
BZX83C
1-Nov-2006
DO-35
BZX83B
bzx 550 4v7
Zener diode 83C 24
|
BZX55B
Abstract: diode zener 8v2 BZX BZX 55B 5V1 -BZX 85 bzx 550 4v7
Text: BZX55B Series Zener diode Features High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol Value
|
Original
|
PDF
|
BZX55B
1-Jun-2008
DO-35
diode zener 8v2 BZX
BZX 55B
5V1 -BZX 85
bzx 550 4v7
|
Untitled
Abstract: No abstract text available
Text: BZX55C Series Zener diode Features High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature
|
Original
|
PDF
|
BZX55C
200mA
1-Jan-2006
|
axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
|
OCR Scan
|
PDF
|
BR805A
BR81A
BR82A
BR84A
BR86A
BR88A
BR91A
BR92A
BR94A
BR96A
axial zener diodes marking code c3v6
H 48 zener diode
ZENER DIODES CODE ID CHART
diode zener ph c5v6
74151N
HS7030
sescosem
SESCOSEM semiconductor
diode zener BZX 61 C 10
BZX 460 zener diode
|
PL33Z
Abstract: PL36Z bzx 2v7 PL20Z PL180 pl6v2 diodes de regulation de tension PL30Z PL6V2Z z 5v1
Text: . DIODES DE RÉGULATION DE TENSION nxy nxy nxy nxy nxy nxy n ü nxy nxy nxy nxy nxy nxy nxy •*xy 1C? txy *x y nxy nxy nxy nxy nxy nxy •«re? *xy %xy /» O nxy nxy nxy nxy BZX B ZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX
|
OCR Scan
|
PDF
|
|
sigma as 226
Abstract: No abstract text available
Text: DO-41 1.3 Watts Zener Diodes B2X85-C3V6 thru BZX85-C62 Use Advantages European Pro-Electron type specifications, now available from a US location. Ideal for use as low cost, general purpose regulators and protection devices. Used in hostile environments where long term reliability is important.
|
OCR Scan
|
PDF
|
DO-41
B2X85-C3V6
BZX85-C62
BZX85-C47
BZX85-C51
B2X85-C56
B2X85-C62
BZX85
sigma as 226
|
BZX 27 1.3W
Abstract: zener BZX 86 BZX 85 1.3W ZENER 2V7 zener BZX 4v7 bzx85c BZX 1.3W BZX85C150 zener BZX 2.7V 85C5V1
Text: SbE D r r z ^ 7# m 7TET237 0D415Û7 2fi=i • SGTH SCS-THOMSON [MmMûra«S T -u -tS - B Z X 85 C 2V 7 S G S-THOHSON 200 ZENER DIODES ■ LARGE VOLTAGE RANGE : 2.7V TO 200V ■ DOUBLE SLUG TYPE CONSTRUCTION ■ PRO ELECTRON REGISTRATION : 2.7V TO 110V ■ CECC FOR TYPES : 2.7V TO 82V
|
OCR Scan
|
PDF
|
7T2T237
0Q415Ã
BZX 27 1.3W
zener BZX 86
BZX 85 1.3W
ZENER 2V7
zener BZX 4v7
bzx85c
BZX 1.3W
BZX85C150
zener BZX 2.7V
85C5V1
|
cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
|
OCR Scan
|
PDF
|
AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
|
TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
|
OCR Scan
|
PDF
|
|
kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
|
OCR Scan
|
PDF
|
|