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    TE Connectivity CZ0706-000

    High Performance Cable 1Conductors 24AWG Silver Plated Copper Orange 600Vac - Bulk (Alt: CZ0706-000)
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    Amphenol Corporation 6STF09PAZ04S20X

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    Mouser Electronics 6STF09PAZ04S20X
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    Amphenol Corporation 6STF09PAZ05S20X

    D-Sub Standard Connectors D-SUB FILTER 9 POS
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    Amphenol Corporation 6STF09PAZ01S20X

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    Amphenol Corporation 6STF09PAZ04S40X

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    Mouser Electronics 6STF09PAZ04S40X
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    Z0 706 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor B1010

    Abstract: ifx780 fast page mode dram controller 74F244 74F257 A-20 DA10 I960 MC88915 AP-704
    Text: A AP-706 APPLICATION NOTE DRAM Controller for 40 MHz i960 CA/CF Microprocessors Sailesh Bissessur SPG EPD 80960 Applications Engineer Intel Corporation Embedded Processor Division Mail Stop CH5-233 5000 W. Chandler Blvd. Chandler, Arizona 85226 February 2, 1995


    Original     		PDF AP-706 CH5-233 74F257) transistor B1010 ifx780 fast page mode dram controller 74F244 74F257 A-20 DA10 I960 MC88915 AP-704

    TMS320DM6446-594

    Abstract: SN74 CDC706 CDC906 CDCE706 CDCE906 PI6CX100 PLL1705 SCAA080A TMS320DM6446
    Text: Application Report SCAA080A – August 2006 – Revised November 2007 CDCx706/x906 Termination and Signal Integrity Guidelines Alexander Pakosta and Giuseppe Mazzoleni . Clock Drivers ABSTRACT


    Original     		PDF SCAA080A CDCx706/x906 CDCE706 CDCE906 CDC706 CDC906 TMS320DM6446-594 SN74 CDC706 CDC906 CDCE706 CDCE906 PI6CX100 PLL1705 SCAA080A TMS320DM6446

    AT84CS001

    Abstract: AT84AS008 AT84AS001 RO4003 TS83102G0B BDC 07 atmel 550 atmel 1050
    Text: Atmel AT84CS001 DMUX Application Note 1. Introduction This application note aims at providing you some recommendations to help you interface the AT84CS001 DMUX to Atmel ADCs TS83102G0B 10-bit 2 Gsps ADC and AT84AS008 10-bit 2.2 Gsps ADC . It first presents how to connect the DMUX to these


    Original     		PDF AT84CS001 TS83102G0B 10-bit AT84AS008 AT84CS001 AT84AS001 RO4003 BDC 07 atmel 550 atmel 1050

    FR4 substrate epoxy dielectric constant 4.4

    Abstract: FR4 epoxy dielectric constant 4.4 FR4 substrate epoxy dielectric constant 4.6 MC100EL16 RO4003 TS8308500 TS8308500GL TSX8308500GL meander line PCB
    Text: ADC 8-bit 500 Msps TSEV8308500 Evaluation Board . User Guide Table of Contents Section 1 Overview . 1-1


    Original     		PDF TSEV8308500 TSEV8308500 2165C FR4 substrate epoxy dielectric constant 4.4 FR4 epoxy dielectric constant 4.4 FR4 substrate epoxy dielectric constant 4.6 MC100EL16 RO4003 TS8308500 TS8308500GL TSX8308500GL meander line PCB

    25GbE

    Abstract: pms 01c H336 F4240 H344 1N1Z2 A139 E1
    Text: DEVICE SPECIFICATION &21 ,' 17,$/ Multi-Rate Performance Monitor with Forward Error Correction S3062 AMCC S3062 SONET/SDH/Gigabit Ethernet Multi-Rate Performance Monitor with Forward Error Correction Revision D Applied Micro Circuits Corporation 6290 Sequence Drive, San Diego, CA


    Original     		PDF S3062 25GbE pms 01c H336 F4240 H344 1N1Z2 A139 E1

    CQFP68

    Abstract: d5 diod FR4 epoxy dielectric constant 4.4 RO4003 MC100EL16 TS8388B TS8388BGL FR4 epoxy dielectric constant 4.2 FR4 epoxy dielectric constant 3.2
    Text: ADC 8-bit 1 Gsps TSEV8388B Evaluation Board . User Guide Table of Contents Section 1 Overview . 1-1


    Original     		PDF TSEV8388B TSEV8388B 2162C CQFP68 d5 diod FR4 epoxy dielectric constant 4.4 RO4003 MC100EL16 TS8388B TS8388BGL FR4 epoxy dielectric constant 4.2 FR4 epoxy dielectric constant 3.2

    transistor Bf 444

    Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		PDF UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1

    LB 1639

    Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
    Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz


    Original     		PDF UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236

    TDB 1390

    Abstract: 706 B34 A74 marking B92 02 diode marking B44 b92 diode diode marking b34 marking A32 HYR1625640G-653 HYR1625640G-840
    Text: HYR 16xx40G/HYR 18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,


    Original     		PDF 16xx40G/HYR 18xx40G TDB 1390 706 B34 A74 marking B92 02 diode marking B44 b92 diode diode marking b34 marking A32 HYR1625640G-653 HYR1625640G-840

    SM-118A

    Abstract: ET1-1-75-3 MABA-008184-CT17TB M513 MABA-008184-CT1760 CURRENT TRANSFORMER PCB MOUNT PCB MOUNT CURRENT TRANSFORMER SM-118-A
    Text: RoHS Compliant 1:1 Transformer with tap 50-870MHz MABA-008184-CT1760 V1 Features • • • • • • Schematic Surface Mount 1:1 Impedance 260°C Reflow Compatible RoHS* Compliant RoHS version of ET1-1-75-3 Available on Tape and Reel. Reel quantity 900


    Original     		PDF 50-870MHz MABA-008184-CT1760 ET1-1-75-3 MABA-008184-CT1760 SM-118A MABA-008184-Cn SM-118A ET1-1-75-3 MABA-008184-CT17TB M513 CURRENT TRANSFORMER PCB MOUNT PCB MOUNT CURRENT TRANSFORMER SM-118-A

    Untitled

    Abstract: No abstract text available
    Text: 79 signal transmission in high frequency/high density applications Impedance Three Examples An inherent characteristic for transmission lines is impedance, which is measured in ohms. Impedance is the ratio of voltage to current in a traveling wave. For a "loss-less" cable, it can be


    Original     		PDF Log10

    Z0 706

    Abstract: M513 MABA-007970-CT74TB MABACT0017 MABACT0074 MABACT0074TR 50-870MHz
    Text: RoHS Compliant 2.66:1 Transmission Line Transformer 50-870MHz Features • • • • • • • MABACT0074 V1P Schematic Surface Mount 2.66:1 Impedance Excellent amplitude and phase balance 260°C Reflow Compatible RoHS* Compliant RoHS version of MABACT0017


    Original     		PDF 50-870MHz MABACT0074 MABACT0017 MABACT0074 SM-152 Z0 706 M513 MABA-007970-CT74TB MABACT0017 MABACT0074TR 50-870MHz

    LB 1639

    Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		PDF UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem

    SM-118-A

    Abstract: M513 MABA-008184-CT1760 MABA-008184-CT17TB
    Text: RoHS Compliant 1:1 Transformer with tap 50-870MHz MABA-008184-CT1760 V1 Features • • • • • • Schematic Surface Mount 1:1 Impedance 260°C Reflow Compatible RoHS* Compliant RoHS version of ET1-1-75-3 Available on Tape and Reel. Reel quantity 900


    Original     		PDF 50-870MHz MABA-008184-CT1760 ET1-1-75-3 MABA-008184-CT1760 SM-118A MABA-008184-Casurements. SM-118-A M513 MABA-008184-CT17TB

    M513

    Abstract: MABA-007970-CT74TB MABACT0017 MABACT0074 MABACT0074TR
    Text: RoHS Compliant 2.66:1 Transmission Line Transformer 50-870MHz Features • • • • • • • MABACT0074 V1P Schematic Surface Mount 2.66:1 Impedance Excellent amplitude and phase balance 260°C Reflow Compatible RoHS* Compliant RoHS version of MABACT0017


    Original     		PDF 50-870MHz MABACT0074 MABACT0017 MABACT0074 SM-152 M513 MABA-007970-CT74TB MABACT0017 MABACT0074TR

    TC200G02 toshiba

    Abstract: TC200G70 bt816 cnh 743 YMUX24H toshiba TC200 CNH 532 TC200E240 Transistor AC 51 0865 75 834 BT16ODFS
    Text: ASIC DATA BOOK TC200G/E SERIES MACROCELLS Non-liner Delay Models 1997 ASIC Data Book TC200G/E SERIES MACROCELLS (Non-linear Delay Models) Published in July, 1996 Document ID: 451V1CA (C) Copyright 1996 TOSHIBA Corporation All Rights Reserved The information contained herein is subject to change without notice. The


    Original     		PDF TC200G/E 451V1CA TC200G02 toshiba TC200G70 bt816 cnh 743 YMUX24H toshiba TC200 CNH 532 TC200E240 Transistor AC 51 0865 75 834 BT16ODFS

    HVQFN24

    Abstract: IESS-308 MO-220 T115 IESS-308 standard IESS-308/309 phase noise specification
    Text: TFF11115HN Low phase noise LO generator for VSAT applications Rev. 1 — 24 March 2011 Product data sheet 1. General description The TFF11115HN is a Ku band frequency generator intended for low phase noise Local Oscillator LO circuits for Ku band VSAT transmitters and transceivers. The specified


    Original     		PDF TFF11115HN TFF11115HN IESS-308 IESS-308 HVQFN24 MO-220 T115 IESS-308 standard IESS-308/309 phase noise specification

    c 3866 transistor

    Abstract: No abstract text available
    Text: 2SC4784 Silicon NPN Bipolar Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ. NF = 1.2 dB typ at f = 900 MHz Outline CM PAK 2 2. Base 3. Collector


    OCR Scan     		PDF 2SC4784 D89-9 c 3866 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SC4899 Silicon NPN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fT = 9 G H z Typ • H igh gain, low noise figure PG = 14.0 dB Typ, N F = 1.2 dB Typ at f = 900 M H z Outline CMPAK 2 700 1. Emitter


    OCR Scan     		PDF 2SC4899

    P3H7

    Abstract: Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma
    Text: asc » • fl23Sb05 OOOHbS? T ■SIEfi/ T-if-tJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


    OCR Scan     		PDF fl235b05 desi548 U4661 BFR14B /cS10mA 200MHz P3H7 Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma

    ABE 422

    Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
    Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


    OCR Scan     		PDF pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721

    Untitled

    Abstract: No abstract text available
    Text: 2SC4784 Silicon NPN Bipolar Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 2 1. E m itter


    OCR Scan     		PDF 2SC4784

    SL6 TRANSISTOR

    Abstract: No abstract text available
    Text: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 • 1. 2. 3.


    OCR Scan     		PDF 2SC5080 D-85622 SL6 TRANSISTOR

    transistor hitachi

    Abstract: HITACHI VC-6045
    Text: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 1 ! S a!l!tlQr £


    OCR Scan     		PDF 2SC5080 transistor hitachi HITACHI VC-6045