c4d02120
Abstract: C4D02120E CSD04060 D0212
Text: C4D02120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF AVG = 2 A Qc Features • • • • • • Package 1200-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation
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C4D02120E
1200-Volt
O-252-2
C4D02120E
C4D02ody
c4d02120
CSD04060
D0212
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Untitled
Abstract: No abstract text available
Text: C3D04060A–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF = 7 A TC < 135°C Qc = 8.5 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D04060Aâ
600-Volt
O-220-2
C3D04060A
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Untitled
Abstract: No abstract text available
Text: C3D04060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 7.5 A Z-Rec Rectifier Qc Features • • • • • • • • 600 V = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D04060A
600-Volt
O-220-2
C3D04060A
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Untitled
Abstract: No abstract text available
Text: C3D04060E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 7.5 A Z-Rec Rectifier Qc Features • • • • • • • • 600 V = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D04060E
600-Volt
O-252-2
C3D04060E
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C3D04060E
Abstract: CREE C3D04060
Text: C3D04060E–Silicon Carbide Schottky Diode Z-REC RECTIFIER VRRM = 600 V IF =4A TC < 160 °C Qc Features • • • • • • • • = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D04060E
600-Volt
O-252-2
C3D04060E
C3D04060
CREE C3D04060
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C4D02120E
Abstract: No abstract text available
Text: C4D02120E VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 7 A Z-Rec Rectifier Qc Features • • • • • • 12 nC Package 1.2kV Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation
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C4D02120E
O-252-2
C4D02120E
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Untitled
Abstract: No abstract text available
Text: C3D03060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 5.5 A Z-Rec Rectifier Qc Features • • • • • • • • 600 V = 6.7 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D03060A
600-Volt
O-220-2
C3D03060A
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Untitled
Abstract: No abstract text available
Text: C3D03065E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 5.5 A Z-Rec Rectifier Qc Features • • • • • • • • 650 V = 6.7 nC Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D03065E
650-Volt
O-252-2
C3D03065E
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Untitled
Abstract: No abstract text available
Text: C3D04065E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 7.5 A Z-Rec Rectifier Qc Features • • • • • • • • 650 V = 8.5 nC Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D04065E
650-Volt
O-252-2
C3D04065E
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C3D03060
Abstract: TO-220 package thermal resistance 175C
Text: C3D03060A–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 3 A Qc = 6.7 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D03060A
600-Volt
O-220-2
C3D03060A
C3D03060
TO-220 package thermal resistance
175C
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marking D03
Abstract: No abstract text available
Text: C3D04060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 4 A Qc = 8.5 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D04060E
600-Volt
O-252-2
C3D04060E
marking D03
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C3D0406
Abstract: C3D04065 C3D04 D0406 TO-220 package thermal resistance CSD10060 C3D04065A
Text: C3D04065A–Silicon Carbide Schottky Diode VRRM = 650 V Z-Rec Rectifier IF AVG = 4 A Qc = 8.5 nC Features • • • • • • • • Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D04065A
650-Volt
O-220-2
C3D04065A
C3D0406
C3D04065
C3D04
D0406
TO-220 package thermal resistance
CSD10060
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Untitled
Abstract: No abstract text available
Text: C4D02120E VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 4.5 A Z-Rec Rectifier Qc Features • • • • • • 11 nC Package 1.2kV Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation
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C4D02120E
O-252-2
C4D02120E
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Untitled
Abstract: No abstract text available
Text: C3D03060E VRRM = Silicon Carbide Schottky Diode 600 V IF TC=135˚C = 5.5 A Z-Rec Rectifier Qc Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D03060E
O-252-2
600-Volt
C3D03060E
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C4D02120E
Abstract: c4d02120
Text: C4D02120E–Silicon Carbide Schottky Diode Z-Rec Rectifier Features • • • • • • IF, TC<135˚C = 6.9 A Qc = 15 nC 1200-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior
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C4D02120E
1200-Volt
O-252-2
C4D02120E
c4d02120
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TO-220 package thermal resistance
Abstract: C3D02060
Text: C3D02060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 2 A Qc Features • • • • • • • • = 4.8 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D02060E
600-Volt
O-252-2
C3D02060E
TO-220 package thermal resistance
C3D02060
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rectifier diode 3A
Abstract: No abstract text available
Text: C3D03060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 3 A Qc = 6.7 nC Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D03060E
O-252-2
600-Volt
rectifier diode 3A
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C3D02060A
Abstract: C3D02060 TO-220 package thermal resistance 175C 10E03
Text: C3D02060A–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 2 A Qc = 4.8 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D02060A
600-Volt
O-220-2
C3D02060A
C3D02060
TO-220 package thermal resistance
175C
10E03
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C3D04060
Abstract: TO-220 package thermal resistance c3d04060a CSD10060 c3d04
Text: C3D04060A–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 4 A Qc = 8.5 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D04060A
600-Volt
O-220-2
C3D04060A
C3D04060
TO-220 package thermal resistance
CSD10060
c3d04
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C3D02060
Abstract: No abstract text available
Text: C3D02060E VRRM = Silicon Carbide Schottky Diode 600 V IF TC=135˚C = 4 A Z-Rec Rectifier Qc = Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D02060E
O-252-2
600-Volt
C3D02060E
C3D02060
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Untitled
Abstract: No abstract text available
Text: C3D02060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 4 A Z-Rec Rectifier Qc = Features • • • • • • • • 600 V 4.8 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D02060A
600-Volt
O-220-2
C3D02060A
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Untitled
Abstract: No abstract text available
Text: C3D02065E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 4 A Z-Rec Rectifier Qc = Features • • • • • • • • 650 V 4.8 nC Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D02065E
650-Volt
O-252-2
C3D02065E
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Untitled
Abstract: No abstract text available
Text: C3D04065A VRRM = VRRM = 650650 V V Silicon Carbide Schottky Diode IF ITF;C=135˚C 7.5 TC<135˚C= 7.6AA Z-Rec Rectifier Qc Qc = 8.5 = 8.5 nC nC Features • • • • • • • • Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application
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C3D04065A
650-Volt
O-220-2
C3D04065A
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Z1073
Abstract: z1071 z1072 DIODE BZX C9VI Z1075 83C12 83C10 83C13 DIODE BZX 83
Text: BZX83 Silicon Z diode for 500 mW BZX 83 is an epitaxial silicon planar Z diode in a glass case 56 A 2 DIN 41883 D O -35 . It is used for the stabilization and limitation of voltages as well as for the generation of reference voltages at low power requirements.
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BZX83
DO-35)
Q62702
Q62702-Q62702â
Q62702I_
Z1073
z1071
z1072
DIODE BZX
C9VI
Z1075
83C12
83C10
83C13
DIODE BZX 83
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