Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm INFRARED EMITTING DIODE Part Number: KP-2012F3C Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel.
|
Original
|
PDF
|
KP-2012F3C
2000pcs
DSAA4437
NOV/28/2013
|
Untitled
Abstract: No abstract text available
Text: 1.6X0.8mm INFRARED EMITTING DIODE Part Number: KP-1608F3C Features Description z 1.6mmX0.8mm SMT LED, 1.1mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel.
|
Original
|
PDF
|
KP-1608F3C
2000pcs
DSAB7146
JAN/17/2012
|
Untitled
Abstract: No abstract text available
Text: 20mm BIG LAMP Part Number: DLC/6SRD Super Bright Red Features Description z 12 pins. The Super Bright Red source color devices are made with z High luminous intensity. Gallium Aluminum Arsenide Red Light Emitting Diode. z Low power consumption. z Wide viewing angle.
|
Original
|
PDF
|
DSAA4650
APR/06/2013
|
Untitled
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMP Part Number: KM2520SURCK01 Hyper Red Features Description z Subminiature package. The Hyper Red source color devices are made with Al- z Long life solid state reliability. GaInP on GaAs substrate Light Emitting Diode. z Low package profile.
|
Original
|
PDF
|
KM2520SURCK01
DSAB6356
FEB/19/2013
|
Untitled
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMP Part Number: KM2520SURCK01 Hyper Red Features Description z Subminiature package. The Hyper Red source color devices are made with Al- z Long life solid state reliability. GaInP on GaAs substrate Light Emitting Diode. z Low package profile.
|
Original
|
PDF
|
KM2520SURCK01
DSAB6356
FEB/19/2013
|
Untitled
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APT1608SURCK Hyper Red Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode. z Wide viewing angle.
|
Original
|
PDF
|
APT1608SURCK
2000pcs
DSAD0926
MAR/16/2013
|
z diode 14a
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTD3216CGCK Green Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Green source color devices are made with AlGaInP on z Low power consumption. GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.
|
Original
|
PDF
|
APTD3216CGCK
2000pcs
acc73
JAN/13/2012
APTD3216CGCK
DSAA9373
z diode 14a
|
Untitled
Abstract: No abstract text available
Text: 3.0mmx1.5mm SMD CHIP LED LAMP Part Number: KPL-3015SURCK Hyper Red Features Description z 3.0mmx1.5mm SMT LED, 1.4mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.
|
Original
|
PDF
|
KPL-3015SURCK
2000pcs
DSAA8030
FEB/05/2013
|
Untitled
Abstract: No abstract text available
Text: 3.0mmx1.5mm SMD CHIP LED LAMP Part Number: KPL-3015SURCK Hyper Red Features Description z 3.0mmx1.5mm SMT LED, 1.4mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.
|
Original
|
PDF
|
KPL-3015SURCK
2000pcs
dev15SURCK
DSAA8030
FEB/05/2013
|
Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm SOLID STATE LAMP Part Number: L-7113SURDK Hyper Red Features Description z Low power consumption. The Hyper Red source color devices are made with Al- z Popular T-1 3/4 diameter package. GaInP on GaAs substrate Light Emitting Diode. z General purpose leads.
|
Original
|
PDF
|
L-7113SURDK
DSAD39C
DSAD3993
MAR/30/2013
|
Untitled
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTD3216SYCK Super Bright Yellow Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
|
Original
|
PDF
|
APTD3216SYCK
2000pcs
JAN/13/2012
APTD3216SYCK
DSAD1050
|
Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SECK Super Bright Orange Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
|
Original
|
PDF
|
KPT-2012SECK
2000pcs
si011
DSAA4129
NOV/01/2011
|
Untitled
Abstract: No abstract text available
Text: 3.2x2.4mm SMD CHIP LED LAMP Part Number: KPBD-3224SURKCGKC Hyper Red Green Features Description z 3.2x2.4mm SMT LED, 2.4mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode.
|
Original
|
PDF
|
KPBD-3224SURKCGKC
1500pcs
DSAD3553
MAR/28/2013
|
Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SRCPRV Super Bright Red Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Red source color devices are made with z Low power consumption. Gallium Aluminum Arsenide Red Light Emitting Diode.
|
Original
|
PDF
|
APT2012SRCPRV
2000pcs
DSAB0830
MAR/16/2013
|
|
Untitled
Abstract: No abstract text available
Text: 3.2x2.4mm SMD CHIP LED LAMP Part Number: KPD-3224SECK Super Bright Orange Features Description z 3.2x2.4mm SMT LED, 2.4mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
|
Original
|
PDF
|
KPD-3224SECK
1500pcs
DSAB2513
MAY/03/2012
|
Untitled
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTD3216SRCPRV Super Bright Red Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Red source color devices are made with z Low power consumption. Gallium Aluminum Arsenide Red Light Emitting Diode.
|
Original
|
PDF
|
APTD3216SRCPRV
2000pcs
DSAB6348
MAR/18/2013
|
Untitled
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SECK Super Bright Orange Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
|
Original
|
PDF
|
KPTD-3216SECK
2000pcs
216SECK
DSAA5712
APR/06/2013
|
Untitled
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: KP-1608SECK Super Bright Orange Features Description z 1.6mmX0.8mm SMT LED, 1.1mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
|
Original
|
PDF
|
KP-1608SECK
2000pcs
DSAC1227
JAN/10/2012
|
Untitled
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APT1608SRCPRV Super Bright Red Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. The Super Bright Red source color devices are made with z Low power consumption. Gallium Aluminum Arsenide Red Light Emitting Diode.
|
Original
|
PDF
|
APT1608SRCPRV
2000pcs
DSAB3726
MAR/16/2013
|
Untitled
Abstract: No abstract text available
Text: T-1 3mm INFRARED EMITTING DIODE Part Number: L-7104F3C Features Description z Mechanically and spectrally matched to the phototran- F3 Made with Gallium Arsenide Infrared Emitting diodes. sistor. z RoHS compliant. Package Dimensions Notes: 1. All dimensions are in millimeters (inches).
|
Original
|
PDF
|
L-7104F3C
DSAB2442
APR/13/2013
|
Untitled
Abstract: No abstract text available
Text: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-1606SECK Super Bright Orange Features Description z 1.6mmx0.6mm right angle SMT LED,1.2mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
|
Original
|
PDF
|
KPA-1606SECK
2000pcs
DSAC2125
MAY/12/2014
|
Untitled
Abstract: No abstract text available
Text: 3.0mmx1.0 mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-3010SECK Super Bright Orange Features Description z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
|
Original
|
PDF
|
KPA-3010SECK
2000pcs
DSAB7756
NOV/29/2011
|
Untitled
Abstract: No abstract text available
Text: 3.2x1.0mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-3210SECK Super Bright Orange Features Description z 3.2mmx1.0mm right angle SMT LED, 1.5mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
|
Original
|
PDF
|
KPA-3210SECK
2000pcs
DSAB7895
OCT/29/2011
|
Untitled
Abstract: No abstract text available
Text: 3.2x1.0mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-3210SECK Super Bright Orange Features Description z 3.2mmx1.0mm right angle SMT LED, 1.5mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
|
Original
|
PDF
|
KPA-3210SECK
2000pcs
DSAB7895
OCT/29/2011
|