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    Z DIODE 14A Search Results

    Z DIODE 14A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    Z DIODE 14A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2.0x1.25mm INFRARED EMITTING DIODE Part Number: KP-2012F3C Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel.


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    PDF KP-2012F3C 2000pcs DSAA4437 NOV/28/2013

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    Abstract: No abstract text available
    Text: 1.6X0.8mm INFRARED EMITTING DIODE Part Number: KP-1608F3C Features Description z 1.6mmX0.8mm SMT LED, 1.1mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel.


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    PDF KP-1608F3C 2000pcs DSAB7146 JAN/17/2012

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    Abstract: No abstract text available
    Text: 20mm BIG LAMP Part Number: DLC/6SRD Super Bright Red Features Description z 12 pins. The Super Bright Red source color devices are made with z High luminous intensity. Gallium Aluminum Arsenide Red Light Emitting Diode. z Low power consumption. z Wide viewing angle.


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    PDF DSAA4650 APR/06/2013

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    Abstract: No abstract text available
    Text: SUBMINIATURE SOLID STATE LAMP Part Number: KM2520SURCK01 Hyper Red Features Description z Subminiature package. The Hyper Red source color devices are made with Al- z Long life solid state reliability. GaInP on GaAs substrate Light Emitting Diode. z Low package profile.


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    PDF KM2520SURCK01 DSAB6356 FEB/19/2013

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    Abstract: No abstract text available
    Text: SUBMINIATURE SOLID STATE LAMP Part Number: KM2520SURCK01 Hyper Red Features Description z Subminiature package. The Hyper Red source color devices are made with Al- z Long life solid state reliability. GaInP on GaAs substrate Light Emitting Diode. z Low package profile.


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    PDF KM2520SURCK01 DSAB6356 FEB/19/2013

    Untitled

    Abstract: No abstract text available
    Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APT1608SURCK Hyper Red Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode. z Wide viewing angle.


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    PDF APT1608SURCK 2000pcs DSAD0926 MAR/16/2013

    z diode 14a

    Abstract: No abstract text available
    Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTD3216CGCK Green Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Green source color devices are made with AlGaInP on z Low power consumption. GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.


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    PDF APTD3216CGCK 2000pcs acc73 JAN/13/2012 APTD3216CGCK DSAA9373 z diode 14a

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    Abstract: No abstract text available
    Text: 3.0mmx1.5mm SMD CHIP LED LAMP Part Number: KPL-3015SURCK Hyper Red Features Description z 3.0mmx1.5mm SMT LED, 1.4mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.


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    PDF KPL-3015SURCK 2000pcs DSAA8030 FEB/05/2013

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    Abstract: No abstract text available
    Text: 3.0mmx1.5mm SMD CHIP LED LAMP Part Number: KPL-3015SURCK Hyper Red Features Description z 3.0mmx1.5mm SMT LED, 1.4mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.


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    PDF KPL-3015SURCK 2000pcs dev15SURCK DSAA8030 FEB/05/2013

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    Abstract: No abstract text available
    Text: T-1 3/4 5mm SOLID STATE LAMP Part Number: L-7113SURDK Hyper Red Features Description z Low power consumption. The Hyper Red source color devices are made with Al- z Popular T-1 3/4 diameter package. GaInP on GaAs substrate Light Emitting Diode. z General purpose leads.


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    PDF L-7113SURDK DSAD39C DSAD3993 MAR/30/2013

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    Abstract: No abstract text available
    Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTD3216SYCK Super Bright Yellow Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


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    PDF APTD3216SYCK 2000pcs JAN/13/2012 APTD3216SYCK DSAD1050

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    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SECK Super Bright Orange Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


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    PDF KPT-2012SECK 2000pcs si011 DSAA4129 NOV/01/2011

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    Abstract: No abstract text available
    Text: 3.2x2.4mm SMD CHIP LED LAMP Part Number: KPBD-3224SURKCGKC Hyper Red Green Features Description z 3.2x2.4mm SMT LED, 2.4mm thickness. The Hyper Red source color devices are made with Al- z Low power consumption. GaInP on GaAs substrate Light Emitting Diode.


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    PDF KPBD-3224SURKCGKC 1500pcs DSAD3553 MAR/28/2013

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    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SRCPRV Super Bright Red Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Red source color devices are made with z Low power consumption. Gallium Aluminum Arsenide Red Light Emitting Diode.


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    PDF APT2012SRCPRV 2000pcs DSAB0830 MAR/16/2013

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    Abstract: No abstract text available
    Text: 3.2x2.4mm SMD CHIP LED LAMP Part Number: KPD-3224SECK Super Bright Orange Features Description z 3.2x2.4mm SMT LED, 2.4mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


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    PDF KPD-3224SECK 1500pcs DSAB2513 MAY/03/2012

    Untitled

    Abstract: No abstract text available
    Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTD3216SRCPRV Super Bright Red Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Red source color devices are made with z Low power consumption. Gallium Aluminum Arsenide Red Light Emitting Diode.


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    PDF APTD3216SRCPRV 2000pcs DSAB6348 MAR/18/2013

    Untitled

    Abstract: No abstract text available
    Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SECK Super Bright Orange Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


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    PDF KPTD-3216SECK 2000pcs 216SECK DSAA5712 APR/06/2013

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    Abstract: No abstract text available
    Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: KP-1608SECK Super Bright Orange Features Description z 1.6mmX0.8mm SMT LED, 1.1mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


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    PDF KP-1608SECK 2000pcs DSAC1227 JAN/10/2012

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    Abstract: No abstract text available
    Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APT1608SRCPRV Super Bright Red Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. The Super Bright Red source color devices are made with z Low power consumption. Gallium Aluminum Arsenide Red Light Emitting Diode.


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    PDF APT1608SRCPRV 2000pcs DSAB3726 MAR/16/2013

    Untitled

    Abstract: No abstract text available
    Text: T-1 3mm INFRARED EMITTING DIODE Part Number: L-7104F3C Features Description z Mechanically and spectrally matched to the phototran- F3 Made with Gallium Arsenide Infrared Emitting diodes. sistor. z RoHS compliant. Package Dimensions Notes: 1. All dimensions are in millimeters (inches).


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    PDF L-7104F3C DSAB2442 APR/13/2013

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    Abstract: No abstract text available
    Text: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-1606SECK Super Bright Orange Features Description z 1.6mmx0.6mm right angle SMT LED,1.2mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


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    PDF KPA-1606SECK 2000pcs DSAC2125 MAY/12/2014

    Untitled

    Abstract: No abstract text available
    Text: 3.0mmx1.0 mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-3010SECK Super Bright Orange Features Description z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


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    PDF KPA-3010SECK 2000pcs DSAB7756 NOV/29/2011

    Untitled

    Abstract: No abstract text available
    Text: 3.2x1.0mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-3210SECK Super Bright Orange Features Description z 3.2mmx1.0mm right angle SMT LED, 1.5mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


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    PDF KPA-3210SECK 2000pcs DSAB7895 OCT/29/2011

    Untitled

    Abstract: No abstract text available
    Text: 3.2x1.0mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-3210SECK Super Bright Orange Features Description z 3.2mmx1.0mm right angle SMT LED, 1.5mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


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    PDF KPA-3210SECK 2000pcs DSAB7895 OCT/29/2011