BAP64-05W
Abstract: No abstract text available
Text: BAP64-05W Small Signal General Purpose PiN Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES z z z z z z z Low diode capacitance Low diode forward resistance Low series inductance High voltage, current controlled
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BAP64-05W
OT-323
01-Jun-2005
BAP64-05W
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marking code s4 diode
Abstract: BAP64-05W
Text: BAP64-05W Small Signal General Purpose Pin Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES z z z z z z z Low diode capacitance Low diode forward resistance Low series inductance High voltage, current controlled
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BAP64-05W
OT-323
01-Jun-2005
marking code s4 diode
BAP64-05W
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mosfet 1500v
Abstract: marking RK sot323 S2N7002KW MOSFET 1500V 10A Vdss 1500V ENHANCEMENT MOSFET "MOSFET "1500V 10A MarkING RK SOT-323
Text: S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES z z z z z Low on-resistance Fast switching Speed Low-voltage drive Easily designed drive circuits
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S2N7002KW
115mA,
OT-323
Pw300S,
10-Jan-2010
mosfet 1500v
marking RK sot323
S2N7002KW
MOSFET 1500V 10A
Vdss 1500V
ENHANCEMENT MOSFET
"MOSFET "1500V 10A
MarkING RK SOT-323
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BAS40-04W
Abstract: BAS40-05W BAS40-06W BAS40W
Text: BAS40/-04W/-05W/-06W Surface Mount Schottky Barrier Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES z z z z Low Turn-on Voltage Low Forward Voltage Very Low Capacitance Less Than 5.0pF @ 0V
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BAS40/-04W/-05W/-06W
OT-323
BAS40W
OT-323,
MIL-STD-202,
22-Sept-2008
BAS40-04W
BAS40-05W
BAS40-06W
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Untitled
Abstract: No abstract text available
Text: BASW40/-04W/-05W/-06W Surface Mount Schottky Barrier Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES z z z z Low Turn-on Voltage Low Forward Voltage Very Low Capacitance Less Than 5.0pF @ 0V
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BASW40/-04W/-05W/-06W
OT-323
BAS40W
OT-323,
MIL-STD-202,
22-Sept-2008
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BAW56W
Abstract: Small Signal Switching
Text: BAW56W Small Signal Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES z z z A Fast Switching Speed For General Purpose Switching Applications High Conductance L 3 3 C B Top View
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BAW56W
OT-323
01-Nov-2008
BAW56W
Small Signal Switching
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A2 diode
Abstract: DIODE marking A2 BAS16W
Text: BAS16W Small Signal Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES z z z A Fast Switching Speed For General Purpose Switching Applications High Conductance L 3 3 C B Top View
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BAS16W
OT-323
13-Nov-2008
150mA
A2 diode
DIODE marking A2
BAS16W
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BAS16W
Abstract: Small Signal Switching DIODE marking A2
Text: BAS16W Small Signal Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES z z z A Fast Switching Speed For General Purpose Switching Applications High Conductance L 3 3 C B Top View
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BAS16W
OT-323
15-December-2008
150mA
BAS16W
Small Signal Switching
DIODE marking A2
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AZ23CxxxW
Abstract: AZ23C5V6W common anode kd9 Dual Zeners in Common Anode marking b AZ23C10W AZ23C18W AZ23C6V8W marking KDL zener 245
Text: AZ23CxxxW Series 250 mW SOT-323 Series Surface Mount Plastic-Encapsulated Zener Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 A L 3 FEATURES z z z 3 C B Top View Dual zeners in common anode configuration.
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AZ23CxxxW
OT-323
OT-323
AZ23C5V6W
AZ23C6V8W
AZ23C10W
AZ23C18W
01-June-2008
AZ23C5V6W
common anode kd9
Dual Zeners in Common Anode marking b
AZ23C10W
AZ23C18W
AZ23C6V8W
marking KDL
zener 245
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ZR 720
Abstract: D 400 transistor 2SB1218A 2SD1819A
Text: 2SD1819A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES z z A High foward current transfer ratio hFE. L Low collector to emitter saturation voltage VCE sat . 3 z Complementary to 2SB1218A B S Top View
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2SD1819A
OT-323
2SB1218A
01-Jun-2007
100mA,
200MHz
ZR 720
D 400 transistor
2SB1218A
2SD1819A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes BAP50-05W pin Diodes SOT-323 DESCRIPTION Silicon planar FEATURES z Two elements in common cathode configuration in a small-sized package z Low diode capacitance z Low diode forward resistance.
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OT-323
BAP50-05W
OT-323
100MHz
100mA;
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DIODE 3J
Abstract: RB706F-40
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 RB706F-40 Schottky Diode 1. ANODE 2. CATHODE FEATURES z Small package z Low VF and low IR. z High reliability. 3. C,A MAKING: 3J• Maximum Ratings @TA=25℃ Parameter
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OT-323
OT-323
RB706F-40
DIODE 3J
RB706F-40
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BAS70-04W
Abstract: BAS70-05W BAS70-06W BAS70W
Text: BAS70W/-04W/-05W/-06W VOLTAGE 70 V, 70 mA Surface Mount Schottky Barrier Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z SOT-323 Low Turn-on voltage Low Forward Voltage - 0.75V Max @ IF = 10 mA
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BAS70W/-04W/-05W/-06W
OT-323
OT-323,
MIL-STD-202
BAS70W
BAS70-04W
01-June-2005
BAS70-05W
BAS70-06W
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Untitled
Abstract: No abstract text available
Text: BAS70W/-04W/-05W/-06W VOLTAGE 70 V, 70 mA Surface Mount Schottky Barrier Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z SOT-323 Low Turn-on voltage Low Forward Voltage - 0.75V Max @ IF = 10 mA
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BAS70W/-04W/-05W/-06W
OT-323
OT-323,
MIL-STD-202
BAS70W
BAS70-04W
23-Jun-2010
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2SC1424
Abstract: MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 NE734
Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 5 0 0 M H z • HIGH GAIN: 15 dB a t 5 0 0 M H z • HIGH GAIN BANDWIDTH PRODUCT: 2 G H z 3 G H z for th e N E 7 3 4 3 5 • SMALL COLLECTOR CAPACITANCE: 1 p F
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NE734
NE73435)
NE73400)
PACKAGEOUTUNE30
PACKAGEOUTUNE33
OT-23)
PACKAGEOUTUNE33
PACKAGEOUTUNE39
OT-143)
2SC1424
MARKING Dt3 sot23 transistor
2SC2148
017 545 71 32 02
j60 mic
mic J60
v3le
2SC202
2SC4185
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PJ 0349
Abstract: CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES HIGH GAIN BANDW IDTH PRO DUCT: fT o f 15 G H z LOW VO LTAG E/LO W CU R R EN T OPERATION HIGH INSERTION POW ER GAIN: |S 21 E|2 = 12 dB @ 2 V , 7 m A , 2 G H z |S 2 1 E |2 = 11 d B @ 1 V, 5 mA, 2 G H z
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NE686
OT-143)
NE68618-T1
NE68619-T1
NE68630-T1
NE68633-T1
NE68639-T1
NE68639R-T1
PJ 0349
CD 888 CB
pj 0266 iv
PJ 0399
pj 1126 1V
nt 9989
pj 1126
SIC SOT343
IC HS 8108
pj 0159
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SMD 5pin co
Abstract: No abstract text available
Text: \ r fflIWI» Uff!1 flMiTTTpM,ïï1WfTl» MI MMI ! •S p ecial Zener Diodes A bsolute m axim um ratings Part Np. T a = 25eC E lectrical characteristics P (mW ) T[ Tstg Topr Vz CC) CC) Cc) (V) lz CmA) Ir (mA) M ax. Z zk Vr (V) Z zk tn) M ax. CO) lz (mA)
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UMZ12N
SMD 5pin co
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r2f transistor
Abstract: R2F SOT-23 transistor R2t TRANSISTOR a31 transistor R2T j
Text: Die no. A-31 PNP medium power transistor Dimensions Units : mm These epitaxial planar PNP silicon transistors are gold doped. SST3 Z.9±0.Z Features l.9 ± 0 .2 • • • 0.45±0.1 □ 0 .9 5 0 .9 S Qcofw# i 0M). 1 0.2Min. i 2 available in the following packages:
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OT-23)
SC-59)
OT-323)
OT-89)
r2f transistor
R2F SOT-23
transistor R2t
TRANSISTOR a31
transistor R2T j
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JRC 45800
Abstract: 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES . L O W N O IS E : 1.3 dB A T 2 .0 G H z • L O W V O L T A G E O P E R A T IO N • EASY T O M ATCH • H IG H G A IN B A N D W ID T H P R O D U C T : f ï o f 13 G H z • A V A IL A B L E IN S IX L O W C O S T P L A S T IC S U R F A C E
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NE687
OT-143}
NE68718-T1
NE68719-T1
NE68730-T1
NE68733-T1
NE68739-T1
NE68739R-T1
JRC 45800
0620 jrc
jrc 13600
jtp sot 143
JRC 6005
4560 d JRC
jrc 0620
4560 JRC
JRC 76600
transistor 2sc 5586
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Untitled
Abstract: No abstract text available
Text: SOT323 PNP SILICON PLANAR ZUMT2907A SWITCHING TRANSISTOR ISSUE 1 - OCTOBER 1998 Q_ FEATURES * Fast s w itc h in g PARTM ARKING D E T A IL -T 1 5 CO M PLIM E N TA R Y TYPE - Z U M T 2 22 2 A ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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OT323
ZUMT2907A
-50mA,
100MHz
100KHz
-150mA,
-15mA
-150mA
200ns
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Untitled
Abstract: No abstract text available
Text: SOT323 NPN SILICON PLANAR ZUMTS17 ZUMTS17H RF TRANSISTORS ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A IL - ZU M TS17 -T 4 Z U M T S 17H -T 4 H ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL C o lle c to r-B a s e V o lta g e VcBO VALUE U N IT 25 V
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OT323
ZUMTS17
ZUMTS17H
217MHz
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Untitled
Abstract: No abstract text available
Text: SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZUMT807-25 ISSUE 1 - DECEMBER 1998_ P A R T M A R K IN G D E T A ILS -T 8 C O M P L E M E N T A R Y TY P E - Z U M T 8 1 7 -2 5 ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL VALUE U N IT C o lle c to r-B a s e V o lta g e
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OT323
ZUMT807-25
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IC NE 5514
Abstract: No abstract text available
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • • • • LOW PHASE NOISE DISTORTION LOW NOISE: 1.5 dB at 2 .0 G H z LOW VOLTAGE OPERATION LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic M A X = 100 mA
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NE688
NE68800
NE68818-T1
NE68819-T1
NE68830-T1
NE68833-T1
NE68839-T1
NE68839R-T1
IC NE 5514
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Vo 80500 TRANSISTOR
Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A
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NE688
OT-143)
PACKAGEOUTUNE39R
NE68818-T1
NE68819-T1
NE68830-T1
NE68833-T1
NE68839-T1
NE68839R-T1
Vo 80500 TRANSISTOR
ST 80500
ap 4606
ST 80500 transistor
q 1257
transistor IR 9342
2110 transistor
NE68819
SOT143 L03
0828 30400
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