Untitled
Abstract: No abstract text available
Text: SK60MH60 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET Z<BB Z¥BB T< T<@ O- L EF N$J 407,- %*8,23.-, -', .6.,+ O- L EF ;MG> N$^ Q>JE> *' _ Q &-^ O- L ;MG> N$^ Q> OP Inverse diode SEMITOP 4 MOSFET Module TD L X T< TD@ L X T<@ O- L EF ;MG> N$^
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SK60MH60
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Untitled
Abstract: No abstract text available
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic
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RT9701
RT9701
OT-23-5)
OT-23-5
DS9701-12T00
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Untitled
Abstract: No abstract text available
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic
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RT9701
RT9701
OT-23-5)
OT-23-5
DS9701-10
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NEC 2561A
Abstract: nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A
Text: NEPOC Photocoupler Family OC MOSFET™ Family Device Overview 2005 When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
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NEPOC-OC-DO20051
NEC 2561A
nec 2501
NEC 2581A
opto coupler 2561A
NEC 2501A
NEC 2561A w
2581A
NEC 2501 Opto coupler
2501 photocoupler
opto 2581A
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IXFN80N60
Abstract: IXFN80N60P3
Text: Advance Technical Information IXFN80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A Ω 70mΩ 250ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFN80N60P3
250ns
E153432
80N60P3
IXFN80N60
IXFN80N60P3
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batterycharger
Abstract: RT9701 PORT marking sot-23-5
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic
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RT9701
RT9701
OT-23-5)
DS9701-16
batterycharger
PORT marking sot-23-5
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Untitled
Abstract: No abstract text available
Text: RT9704 Preliminary 50mΩ Ω, 3A Smart Universal Power Switch with Flag General Description Features The RT9704 is a low voltage, high performance single N-Channel MOSFET power switch, designed for power rail on/off control with low RDS ON ≈ 50mΩ and full protection
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RT9704
RT9704
OT-23-6
DS9704-06
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60n20
Abstract: 60N20T IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T
Text: Preliminary Technical Information IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions
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IXTA60N20T
IXTP60N20T
IXTQ60N20T
O-263
O-220AB
60N20T
60n20
IXTQ60N20T
IXTA60N20T
IXTP60N20T
ixta 60N20T
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IXFN50N80Q2
Abstract: 50N80Q2
Text: IXFN50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings
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IXFN50N80Q2
300ns
OT-227
E153432
50N80Q2
1-18-10-C
IXFN50N80Q2
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Untitled
Abstract: No abstract text available
Text: RT9706 80mΩ Ω, 500mA High-Side Power Switch with Flag General Description Features The RT9706 is a cost-effective, low voltage, single N-Channel MOSFET high-side power switch, optimized for self-powered and bus-powered Universal Serial Bus USB applications. The RT9706 equipped with a charge
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RT9706
500mA
RT9706
OT-23-5
DS9706-00
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36p15
Abstract: IXTP36P15P 3-26-08-B
Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS
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O-263
IXTA36P15P
IXTP36P15P
IXTQ36P15P
O-220
100ms
36P15P
36p15
3-26-08-B
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IXTR140P10T
Abstract: No abstract text available
Text: Preliminary Technical Information IXTR140P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR140P10T
-100V
ISOPLUS247
E153432
-140A
140P10T
IXTR140P10T
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IXFR64N60Q3
Abstract: No abstract text available
Text: Advance Technical Information IXFR64N60Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 600V 42A Ω 104mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR64N60Q3
300ns
ISOPLUS247
E153432
64N60Q3
IXFR64N60Q3
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FMM150-0075X2F
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM HiperFET N-Channel Power MOSFET FMM150-0075X2F 3 3 VDSS ID25 RDS on trr(typ) T1 55 = = ≤ = 75V 120A Ω 5.8mΩ 66ns 4 4 Phase Leg Topology T2 1 1 ISOPLUS i4-PakTM 22 Symbol Test Conditions Maximum Ratings -55 . +175
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FMM150-0075X2F
50/60HZ,
FMM150-0075X2F
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Untitled
Abstract: No abstract text available
Text: Preliminary RT9702/A 80mΩ Ω, 500mA/1.1A High-Side Power Switches with Flag General Description Features The RT9702 and RT9702A are cost-effective, low voltage, single N-Channel MOSFET high-side power switches, optimized for self-powered and bus- powered Universal
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RT9702/A
500mA/1
RT9702
RT9702A
RT9702/A
TSOT-23-5
DS9702/A-09
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ixfn40n90p
Abstract: No abstract text available
Text: IXFN40N90P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = = < < RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 900V 33A Ω 230mΩ 300ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V
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IXFN40N90P
300ns
E153432
40N90P
0-25-11-A
ixfn40n90p
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IXFR40N90P
Abstract: No abstract text available
Text: IXFR40N90P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = = < < RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 900V 21A Ω 250mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V
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IXFR40N90P
300ns
ISOPLUS247
E153432
40N90P
0-25-11-A
IXFR40N90P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB = = ≤ RDS(on) - 150V - 36A Ω 110mΩ TO-3P (IXTQ) TO-220 (IXTP) TO-263 (IXTA) G VDSS ID25 G D(TAB) D S Symbol Test Conditions
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IXTA36P15P
IXTP36P15P
IXTQ36P15P
O-220
O-263
100ms
IXTA36P15P
36P15P
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ixfx74n50p2
Abstract: ixfk74n50p2 PLUS247 74185A 74N50
Text: Advance Technical Information IXFK74N50P2 IXFX74N50P2 PolarP2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 74A Ω 77mΩ 250ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings
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IXFK74N50P2
IXFX74N50P2
250ns
O-264
13/10peres
74N50P2
ixfx74n50p2
ixfk74n50p2
PLUS247
74185A
74N50
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crydom series cy
Abstract: Crydom CY D4D12 crydon d1d12 crydom series 1 hk relay 803B D1D12 D1D20 D2D07
Text: CRYDOM CO 31E T> • 2542537 OOOGbSH 1 ■ CRY -p Z 5 -3 i CPY3QM BULLETIN 803B C O M P A N Y SERIES 1-DC MOSFET Output Solid-State Relay 7.0 Thru 40 Amp 100-500 VDC Output Advanced Semiconductor Technology Low On-State Resistance Paralleling Capability High Surge Ratings
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30DF1
A115A
30DF2
A115B
A115D
A115E
AP3151-1037)
crydom series cy
Crydom CY
D4D12
crydon d1d12
crydom series 1
hk relay
803B
D1D12
D1D20
D2D07
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Untitled
Abstract: No abstract text available
Text: r Z 7 SGS-THOMSON Ä T # RäDSlRi i[Liera®[i!lDS$ STP40NE03L-20 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYP E V dss R d S o ii Id S T P 4 0 N E 0 3 L -2 0 30 V < 0 .0 2 0 Q. 40 A . . . . TYPICAL RDs(on) = 0.014 £1 EXC EPTIO N AL dv/dt CAPABILITY
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STP40NE03L-20
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Untitled
Abstract: No abstract text available
Text: SIE D • Ô13bb71 DGOBSöb 1SÖ m S Z K G s e m ik Roim SEMIKRON INC Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol humidity climate Conditions 1 Rgs = 20 k fl AC, 1 min, 200 |iA DIN 40 040 DIN IEC 68 T.1 Values Units 500 500 48
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13bb71
SKM151
fll3bb71
T-39-15
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VIPer30
Abstract: No abstract text available
Text: VIPer20B VIPer20BSP SMPS PRIMARY I.C. P R E L IM IN A R Y D A T A TYPE V V IP e r2 0 B /S P dss 40 0V In RDS on 1.3 A 8 .7 Q. FEATURE . ADJUSTABLE SWITCHING FREQUENCY UP T0200KH Z . CURRENT MODE CONTROL . SOFT START AND SHUT DOWN CONTROL . AUTOMATIC BURST MODE OPERATION IN
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VIPer20B
VIPer20BSP
T0200KH
SO-10
VIPer20Bâ
PowerSO-10
VIPer30
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GA-32
Abstract: CA3240AE1 GA3240 ca3240 application circuit ca3240
Text: CA3240, CA3240A ¡1 } H a r r i s S E M I C O N D U C T O R w 7 m w Du a l, 4 . 5 M H z , B i M O S O p e r a t i o n a l A m p l i f i e r with M O S F E T I n p u t / B i p o l a r O u t p u t November 1996 Features Description • D u a l V e rs io n o f C A31 40
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CA3240,
CA3240A
CA3240A
CA3240
CA3140
1N914
GA-32
CA3240AE1
GA3240
ca3240 application circuit
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