BL1300
Abstract: HD64180 Z80 KIO Z World bl1300 BL1100 ibm USA P6 2001 analog z world series BL1700 Z-World epson printer board schematic PAL 16V8Q
Text: BL1300 C-Programmable Controller Users Manual Revision 3 Z-World BL1300 Users Manual Part Number 019-0006-03 Revision 3 021-0021-03 Printed in U.S.A. Last Revised by TI August 25, 1998 Copyright 1998 Z-World, Inc. All rights reserved.
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BL1300
write12data
write24data
XP8100
XP8200
XP8300
XP8400
XP8500
XP8600
BL1300
HD64180
Z80 KIO
Z World bl1300
BL1100
ibm USA P6 2001 analog
z world series BL1700
Z-World
epson printer board schematic
PAL 16V8Q
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MWA5157
Abstract: No abstract text available
Text: ~oT@Ro~ . .,. .:, , . . . TECHNICA~’DAT~: ?-e .-. .-z. . . . . I . ——.— . . . _.-,- “7 ,’, fiidebatid Hybrid Ampliff&r . A“B~OLU~ MAXIMUM 1. I!~ltSupplv”Voltage Current — ,.”! !. Ir/put Voltage ~nNGS TA = 25’C Parameters
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MWA5157
MWA5157
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S10601
Abstract: C10601 T10601 nec 3S4M S4004F1 2N2454 GE C150 s20600 S04070H S4003LS3
Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number SeRs, VDRM 5 10 S04050H S04070H S04100H S20600 S2061 0 NCM400C 2N1604 NCR400B S4003LS1 C10802 g~g:g~ 15 20 C10804 C10804 S4003LS2 S4003LS3 3P4J 3P4J-Z CR3CM8 CR3CM8 ~~~;g~6 25 30 TXF4005 TYF4005 OR03E C150
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S04050H
S04070H
S04100H
S20600
S2061
NCM400C
2N1604
NCR400B
S4003LS1
C10802
S10601
C10601
T10601
nec 3S4M
S4004F1
2N2454
GE C150
S4003LS3
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CMD13
Abstract: CMD16 CMD17 HB288016MM1 CMD24 CMD28 DSA003633 Nippon capacitors
Text: HB288016MM1 MultiMediaCard 16 MByte ADE-203-1015B Z Rev. 1.0 Jul. 25, 2000 Description The Hitachi MultiMediaCard HB288016MM1 is a highly integrated flash memory with serial and random access capability. It is accessible via a dedicated serial interface optimized for fast and reliable
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HB288016MM1
ADE-203-1015B
HB288016MM1
mechanica2100
CMD13
CMD16
CMD17
CMD24
CMD28
DSA003633
Nippon capacitors
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CMD27
Abstract: Hitachi DSA00164 Nippon capacitors
Text: HB288064MM1 MultiMediaCard 64 MByte ADE-203-1191 Z Preliminary Rev. 0.0 Jul. 25, 2000 Description The Hitachi MultiMediaCard HB288064MM1 is a highly integrated flash memory with serial and random access capability. It is accessible via a dedicated serial interface optimized for fast and reliable
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HB288064MM1
ADE-203-1191
HB288064MM1
CMD27
Hitachi DSA00164
Nippon capacitors
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CMD13
Abstract: CMD16 CMD17 HB288064MM1 CMD21 Hitachi DSA00480 CMD27 Nippon capacitors
Text: HB288064MM1 MultiMediaCard 64 MByte ADE-203-1191 Z Preliminary Rev. 0.0 Jul. 25, 2000 Description The Hitachi MultiMediaCard HB288064MM1 is a highly integrated flash memory with serial and random access capability. It is accessible via a dedicated serial interface optimized for fast and reliable
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HB288064MM1
ADE-203-1191
HB288064MM1
inexpensiv2100
CMD13
CMD16
CMD17
CMD21
Hitachi DSA00480
CMD27
Nippon capacitors
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ADC207MC
Abstract: HA19213NT MC10315L MC10321P PNA7509 TDC1047B7C MN6550 MN6550B
Text: — 216 — # 7 fc'-y h ^ l J J t t S c ^ A - D 3 z MC10315L ADC207MC TDC1047B7C PNA7509 HA19213NT, MP MCI 0 3 21P , DW MN6550B/S * - i j MOTOROLA DATEL TRW PHILIPS B Ä MOTOROLA töT iUfflÄmSt +25' C +25'C TFS TFS +25'C +25'C 25°C <!*!£& W - 15MSPS 20MSPS min
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MC10315L
ADC207MC
TDC1047B7C
PNA7509
HA19213NT,
MC10321P
MN6550B/S
15MSPS
20MSPS
HA19213NT
MN6550
MN6550B
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6550B
Abstract: PNA7509 ADC207MC HA19213NT MC10315L MC10321P TDC1047B7C MN6550
Text: — 216 — # 7 fc'-y h ^ l J J t t S c ^ A - D 3 z MC10315L ADC207MC TDC1047B7C PNA7509 H A 1 9 2 1 3 N T , MP MCI 0 3 21P , DW MN6550B/S * - i j MOTOROLA DATEL TRW PHILIPS B Ä MOTOROLA töT iUfflÄmSt +25' C +25'C TFS T FS +25'C +25'C 25°C <!*!£& W -
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MC10315L
ADC207MC
TDC1047B7C
PNA7509
HA19213NT,
MC10321P
MN6550B/S
15MSPS
20MSPS
6550B
HA19213NT
MN6550
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PNA7509
Abstract: ADC207MC HA19213NT MC10315L MC10321P TDC1047B7C MN6550B
Text: — 216 — # 7 fc'-y h ^ l J J t t S c ^ A - D 3 m z * -ij MC10315L ADC207MC TDC1047B7C PNA7509 H A 1 9 2 1 3 N T , MP MCI 0 3 21P , DW MN6550B/S MOTOROLA DATEL TRW PHILIPS B Ä MOTOROLA töT iUfflÄmSt +25' C +25'C TFS T FS +25'C +25'C 25°C <!*!£& W -
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MC10315L
ADC207MC
TDC1047B7C
PNA7509
HA19213NT,
MC10321P
MN6550B/S
15MSPS
20MSPS
HA19213NT
MN6550B
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MC10315L
Abstract: PNA7509 ADC207MC HA19213NT MC10321P TDC1047B7C 15MSPS
Text: — 216 — # 7 fc '-y h ^ lJ J ttS c ^ A - D 3 z MC10315L ADC207MC TDC1047B7C PNA7509 H A 1 9 2 1 3 N T , MP MCI 0 3 21P , DW MN6550B/S * - i j MOTOROLA DATEL TRW PHILIPS B Ä MOTOROLA töT iUfflÄmSt +25' C +25'C TFS T FS +25'C +25'C 25°C <!*!£& W - 15MSPS
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MC10315L
ADC207MC
TDC1047B7C
PNA7509
HA19213NT,
MC10321P
MN6550B/S
15MSPS
20MSPS
HA19213NT
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Untitled
Abstract: No abstract text available
Text: 17E D LANSDALE SEMI CO NDUC TO R 53b1fl03 0GGQ304 T T -H S 23-09 T - y S -13- 25 r-6 6 'Z l-5 5 T-H S -Z 3-0S T- VS’& ' t f “T - b ò - Z I - S l MAXIMUM RATINGS Rating “ MOTOROLA INTEGRATED CIRCUITS 4300 Series 4000 Series These MTTL integrated circuits
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53b1fl03
0GGQ304
14-LEAD
16-LEAD
10-LEAD
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MN6550
Abstract: MN6550B ADC207MC HA19213NT MC10315L MC10321P PNA7509 TDC1047B7C
Text: — 216 — # 7 fc'-y h ^ l J J t t S c ^ A - D 3 m z MC10315L ADC207MC TDC1047B7C P N A7509 HA19213NT, MP MCI 0 3 21P , DW MN6550B/S * - i j MOTOROLA DATEL TRW PH ILIPS BÄ MO T O R O L A tö T iUfflÄmSt +25' C +25'C TFS TFS +25'C +25'C 25°C < !* !£ & W - h
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MC10315L
ADC207MC
TDC1047B7C
PNA7509
HA19213NT,
MC10321P
MN6550B/S
15MSPS
20MSPS
MN6550
MN6550B
HA19213NT
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MFE121
Abstract: MFE120 MFE122 T7210
Text: MOTORCLA SC XSTRS/R F 15E D | b3fc.7a5M Q0afci7g0 1 [ MFE120 T~Z! , thru MFE122 CASE 20-03, STYLE 9 TO-72 TO-206AF M A X IM U M RATINGS Symbol Value VDS + 25 Vdc Drain Current >D 30 mAdc Total Device Dissipation @ T /\ - 25°C Derate above 25°C PD 300 1.7
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MFE120
MFE122
O-206AF)
b3b7254
MFE120
MFE121
MFE122
T7210
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pepi c
Abstract: MRF426
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF426 The RF Line 25 W PEPI - 3 0 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . .designed for high gain driver and o u tp u t linear am plifier stages in 1.5 to 3 0 M H z H F /S S B equipm ent.
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MRF426
pepi c
MRF426
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO 3^E ]> O b3ti75SS 00 0 3 0 1 =1 S QtlOT? 3EZ3.9D5 thru 3EZ400D5 ELECTRICAL CHARACTERISTICS (Ta =25°C unless otherwise noted) V F = 1.5 V Max, Ip = 200 mA for all types) Nominal Zener Voltage V z lz r Volts (Note 2) Test Current
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b3ti75SS
3EZ400D5
3EZ10D5
3EZ11D5
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transistor 335
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 25 W P E P - 3 0 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTORS .d esigne d primarily for applications as a high-power linear amplifier from 2.0 to 75 MHz. • Specified 28 Volt. 30 M H z Characteristics —
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MRF401
transistor 335
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Untitled
Abstract: No abstract text available
Text: O 73 O 5-= i 3 3 oS to n i a a * 4-25 b-1 m o c r < r a r o m 5 5'» N5'3 m r o — > > a 5' § — j > g j5 ; ok o c > o N -j ru z a o L n ru •o c H z o 0 3 LU t-* o> 30 a 5 in - C O y ) ro f° ^ - Ü MOTOROLA SC IME 0 | b 3 b 7 2 S 2 0002050 7 | LOGIC
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MC10H181
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MRF163
Abstract: Motorola AN211
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF163 The RF MOSFET Line 25 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER designed for w ideband large-signal output and driver applica tions in the 2 0 to 4 00 MHz range
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MRF163
RF163
MRF163
Motorola AN211
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MPSU45 REPLACEMENT
Abstract: MPSU06 equivalent Motorola MPSU45 mpsu07 equivalent MPSU45 mpsu95 equivalent MPSU10 equivalent mps-u56 equivalent MPSU51 equivalent MPS-U05
Text: 1 CENTRAL SEMICONDUCTOR b l DE | n tm b B □DDDS40 T ~Ö Z - |T Central's CEÜ-U o I Ideal second source for Motorola’s MPS-U series power transistors Exact electrical equivalent in JE D E C TO-202 case._ • Superior power dissipation p D t A = 25 °C 1.75 W atts vs. 1.0 W att Motorola
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DDDS40
O-202
MPS-U01
CEN-U01
MPS-U51
CEN-U51
MPS-U01A
CEN-U01A
MPS-U51A
CEN-U51A
MPSU45 REPLACEMENT
MPSU06 equivalent
Motorola MPSU45
mpsu07 equivalent
MPSU45
mpsu95 equivalent
MPSU10 equivalent
mps-u56 equivalent
MPSU51 equivalent
MPS-U05
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MPF201
Abstract: 3N201 MPF201 motorola 3N203 3N202 3n201-3n203 826-10
Text: MOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC "Tb DF|b3t.72S4 DDaabOfl 96D CXSTRS/R F 82608 D _ - r - z h ^ 3N201 3N202 3N203 M A X IM U M R A T IN G S Rating Sym bol Value U nit Vd S 25 Vdc V d GI V d G2 30 30 Vdc Drain-Source Voltage Drain-Gate Voltage
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3N201
3N202
3N203
O-206AF)
MPF201
MPF201 motorola
3N203
3n201-3n203
826-10
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3N201
Abstract: MPF201 3n203 3N201+equivalent 3N202
Text: MOTOROLA 6367254 SC -CXSTRS/R M OT O RO L A F> SC Tb CXSTRS/R D F | b 3 t, 7 2 5 4 96D F 82608 OOflSbOfl D _ z 2 . 5 ^ h 3N201 3N202 3N203 M A X IM U M R A T IN G S Ra tin g Sym bol V alu e U n it V DS 25 Vdc vdgi
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3N201
3N202
3N203
20-03O
3N201,
3N202,
MPF201
3n203
3N201+equivalent
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TP2511
Abstract: No abstract text available
Text: 12E D I b B t i ? 25 M MOTOROLA MOTOROLA SC QGÔÔ24E XSTRS/R *ì | F 1-33-H SEMICONDUCTOR TECHNICAL DATA TP2511 Advance Inform ation The RF Line UHF P o w e r T ran sisto r l o w — 470 M H z UHF POWER TRANSISTOR The TP2511 is designed for 12.5 V UHF amplifiers. Its construction which incorporates
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1-33-H
TP2511
TP2511
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MRF234
Abstract: lb940 MRF-234
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF234 T h e R F Line 25 W - 9 0 M H z RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed for 12.5 V o lt, mid-band large-signal am plifier app li cations in industrial and com m ercial F M equipm ent operating in the
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MRF234
MRF234
lb940
MRF-234
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2N3438
Abstract: 206-AA
Text: MOTORCLA SC XSTRS/R 15E D F I babTasM opflbboa M I 2N3437 2N3438 CASE 22-03, STYLE 4 TO-18 TO-206AA 2 Drain Gate & C a s e / ^ Z j N •ti? MAXIM UM RATINGS Symbol Rating DraiivGate Vortage Gate-Source Vortage Gate Current Total Device Dissipation @ De rate above 25°C
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2N3437
2N3438
O-206AA)
2N3438
206-AA
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