YR YF TRANSISTOR Search Results

YR YF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

YR YF TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Vishay Telefunken Physical Explanations AQL Acceptable Quality Level see chapter “Quality Data” B, b Base, base terminal C, c Collector, collector terminal The transistor equivalent circuit (see chapter “Transistor Equivalent Circuit”) shows the different	Original		PDF
HALL EFFECT 21E Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG Text: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material	Original	26-Feb-97 HALL EFFECT 21E thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG	PDF
Common collector configuration basic Abstract: transistor Common emitter configuration NF50 yr yf transistor photo thyristor oscillator tunnel diode Text: Vishay Telefunken Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material F Function	Original		PDF
diode tunnel Abstract: NF50 Common collector configuration basic rs gp germanium diode Text: Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material F Function	Original		PDF
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR	PDF
cil pnp smd Abstract: smd transistor yf smd transistor fj npn smd transistor FY transistor smd JR VR313 transistor smd ztf 2SC4669 TE5S M55S Text: Power Transistor n PNP t #jf+j:&m OUTLINE DIMENSIONS Case 1 E-pack 2SAl795 I-,_ 1:; : i ; -1 “5y;.5. o ] 4 -4OV -5A I’ll1 st> le 1 : J-he 2 : 3 : blmlttc~r 4 : colltTtol ;@i!Z RATINGS Q$Az$j$ 4 Absolute Maximum Ratings rl =1 CiL rj11 < ;,a fC$ I+ iii-	Original	2SAl795 2sc4979 Zll/C79t; cil pnp smd smd transistor yf smd transistor fj npn smd transistor FY transistor smd JR VR313 transistor smd ztf 2SC4669 TE5S M55S	PDF
2sc5088 horizontal transistors Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509	PDF
3SK73 Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 Text: 高周波用半導体デバイスパワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112	PDF
Untitled Abstract: No abstract text available Text: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.	Original		PDF
BU43FVE Abstract: BU4338 BU4210 Text: Datasheet Voltage Detector IC Series Low Voltage Free Delay Time Setting CMOS Voltage Detector IC Series BU42□□G series, BU42□□F series, BU42□□FVE series, BU43□□G series, BU43□□F series, BU43□□FVE series ●General Description ROHM CMOS reset IC series with adjustable output	Original	BU42G BU42F BU42FVE BU43G BU43F BU43FVE TSZ2211115001 TSZ02201-0R7R0G300050-1-2 BU4338 BU4210	PDF
Untitled Abstract: No abstract text available Text: TECHNICAL NOTE Voltage Detector IC Series Low Voltage Free Delay Time Setting CMOS Voltage Detector IC Series BU42□□G/F/FVE，BU43□□G/F/FVE Series ●General Description ROHM CMOS reset IC series with adjustable output delay is a high-accuracy low current consumption reset IC series with a	Original		PDF
yr yf transistor Abstract: ITT Intermetall Text: Technical Information Index of Symbols b bf bi bo br B Bq C Ci Co CcBO C EBO Ciss Cr E f fr F Fc g 9f 9i 9m 9o 9r 9s GC GP Gpav Gp max Gy h hf hi h0 hr hFE Iß Ibm Ibi >B2 !c !c a v leso !c e o !c e r 6 Imaginary part of y-Parameters Imaginary part of forward	OCR Scan		PDF
QS 100 NPN Transistor Abstract: KSC1393 transistor revers characteristic j001 samsung tv Text: SAMSUNG SEMICONDUCTOR INC KSC1393 14E J\| GOOböflS fl \| T ~ 3 /~ /J NPN EPITAXIAL SILICON TRANSISTOR TV VHF TUNER RF AMPLIFIER FORWARD AGC • High Current Gain Bandwidth Product fT=700MHz (iyp) • Low Noise Figure NF=3.0dB (Max) at f=200MHz • Low Reverse Transfer Capacitance Cre=0.5pF (Max)	OCR Scan	71t4m2 KSC1393 700MHz 200MHz f-200MHz Rj-500 200MHz QS 100 NPN Transistor transistor revers characteristic j001 samsung tv	PDF
3sk73 Abstract: SK192A 2SK241 Text: 2. GAIN AND STABILITY F igure 2.1 show s the basic high-frequency am p lification circu it o f a transistor/F E T and its equiva len t circuit. W hen this am plification circ u it is tuned to the c en ter frequency, the capacitance is rem oved and only the conductance rem ains as show n in the	OCR Scan	2SC380TM10 2SC3125 2SC3123 3sk73 SK192A 2SK241	PDF

BF 234 transistor Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv Text: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q \| ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz	OCR Scan	KSC2786 600MHz -22dB 100MHz O-92S KSC2786 100MHz T-31-17 BF 234 transistor transistor RF POWER TRANSISTOR 100MHz samsung tv	PDF
2SK163 Abstract: nec 2sk163 2SK163 TO92 transistor 2sk163 2sk163 transistor 2sk163 nec transistor et 454 transistor S67 dh 0734 "2SK163" Text: NEC J u n c t io n F ie ld E ffe ct T r a n s is t o r 2SK163 N-Channel Silicon Junction Field Effect Transistor Audio Frequency Low Noise Amplifier PACKAGE DIMENSIONS t t f t / FEATURES U n i t : mm o e n= 1 . 3 n V / / H 7 M H ig h E , VpsxèSO V T Y P .	OCR Scan	2SK163 r-0988 2SK163 nec 2sk163 2SK163 TO92 transistor 2sk163 2sk163 transistor 2sk163 nec transistor et 454 transistor S67 dh 0734 "2SK163"	PDF
KTC3193 Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA KTC3193 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURES • High Power Gain : Gpe=30dB Typ. (f=10.7MHz). • Recommended for FM IF, OSC Stage and AM CONV, IF Stage. MAXIMUM RATINGS (Ta=25°C)	OCR Scan	KTC3193 T0-92M 455kHz KTC3193	PDF
KTC3193 Abstract: No abstract text available Text: SEMICONDUCTOR T E C H N IC A L D A T A KOREA ELECTRONICS CO.,LTD. KTC3193 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURES • High Power Gain : Gpe=30dB Typ. (f=10.7MHz). • Recommended for FM IF, OSC Stage and AM CONY, IF Stage.	OCR Scan	KTC3193 T0-92M 455kHz 455kHz KTC3193	PDF
2SC1009A Abstract: CIL 108 Text: SILICON TRANSISTOR ELECTRON DEVICE 2SC1009A F M /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f j = 250 MHz TYP. 2.8 ± 0.2 • Low Output Capacitance: CQb = 1.8 pF TYP.	OCR Scan	2SC1009A J22686 TC-1486A 2SC1009A CIL 108	PDF
transistor c 1923 Abstract: 2SC1923-0 sc1923 2sc 1203 PF751 2SC1923R C1923 2SC1923O transistor A05 2SC19230/3772 Text: ì / U D y N P N X t i9 * 5 / 7 > l, 7 ls - ? & h 7 y 5 J Z S ! , SILICON NPN EPITAXIAL PLANAR TRANSISTOR o FM R P , M I X , I P o FM T u n e r Â 2 SC 1923 iflfilffl and High F r eq u e n c y A m plifier Appli c a tio n s • ; Cr e = 0 i 7 0 p F Typ.)	OCR Scan	a70pF SC-43 200MHz transistor c 1923 2SC1923-0 sc1923 2sc 1203 PF751 2SC1923R C1923 2SC1923O transistor A05 2SC19230/3772	PDF
Untitled Abstract: No abstract text available Text: T em ic Semiconductors Symbols and Terminology AQL Acceptable Quality Level see chapter “Quality Data” B. b Base, base terminal C, c Collector, collector terminal Capacitances The transistor equivalent circuit (see chapter “Transistor Equivalent Circuit”) shows the different capacitances in	OCR Scan	13-Mar-97	PDF
mem637 Abstract: mem616 tetrode 3N159 MEM5640 MEM563C MEM617 GP 617 DIODE 3n187 MEM680 Text: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. M E M 550 M E M 550C MEM 551 MEM 551C #M E M 954 •M E M 9 5 4 A M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 3N 151 3N 165 3N 166 3N 188 *3N 189 3N 190 3N 191 MEM 517C2M	OCR Scan		PDF
list of transistor Abstract: dual-gate sr 160 DIODE Equivalent list Text: [II] EXPLANATION OF HIGH-FREQUENCY CHARACTERISTICS 1. H IG H -FR E Q U E N C Y T R A N SIST O R PA R A M E T E R ex ten t of signals am plitude to be handled. E quivalent p a ra m eters o f a tra n sisto r in E quivalent circu its have been developed	OCR Scan		PDF
AM3526 Abstract: 2-bit half adder AM312 AM290 AM2019 AM2001 002074 Text: ADVANCED MICRO D E V I C E S 7b D E j 0ES7SHS OOSOTbM ADVANCED MICRO D E V ICES 5 \| 76C ¿ 0 9 6 4 D “¿T -.4-2-11-13 I" Mask-Programmable Gate Array With ECL RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 Internal cells - Up to 135 l/O s	OCR Scan	1T-42-11-13 WF001164 00ECH7Ã T-42-11-13 AM3526 2-bit half adder AM312 AM290 AM2019 AM2001 002074	PDF

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YR YF TRANSISTOR Search Results

YR YF TRANSISTOR Result Highlights (5)

YR YF TRANSISTOR Datasheets Context Search

Untitled

HALL EFFECT 21E

Common collector configuration basic

diode tunnel

FET K161

cil pnp smd

2sc5088 horizontal transistors

3SK73

Untitled

BU43FVE

Untitled

yr yf transistor

QS 100 NPN Transistor

3sk73

BF 234 transistor

2SK163

KTC3193

KTC3193

2SC1009A

transistor c 1923

Untitled

mem637

list of transistor

AM3526