diode k1
Abstract: No abstract text available
Text: lkssj m.j pm }rxn- ~{pwr* pun}np*r}v~*vp~ @XYT F\/;?364481 <ZQXT[a aTZ]T_Pab_T ; .51 IPaTS c\YaPVT ; 361M<= a\ 81 IPaTS Rb_T[a ; 21< +]T_ ]\YT, >XTYTRa_XR `a_T[VaW+EX[/, ; 3111M<= ITaPX[T_ ; [\[.PcPXYPQYT NWXaT ]YP`aXR aPV ; [\[.PcPXYPQYT E\SbYT` ; [\[.PcPXYPQYT
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3111M<
q2/17/4
q240582658
CJG0KJ27
CJG25112-
J29112-
diode k1
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GS0401
Abstract: KEYPAD 4 16-key
Text: Transparent Key Cap IP54 SEALED Transparent Legend Tile Coloured Tile >2 Million OPERATIONS PER KEY Key Base RESPONSIVE KEY ACTION ESD PROTECTED t orm Graphic Series 8 6 35 * 7 # 4 9 1 n -o ap ds sn en ith eg w ml s ad sto yp cu ke for h ug ps To yto ke d
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GFX-LIT-01
GS0401
KEYPAD 4
16-key
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29V16000ATS Document Title 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 D ata S hee t, 1997. A pril 10th 1997 1.0 D ata S hee t, 1998. A pril 10th 1998 Remark 1. C h a n g e d tBER S p a ra m e te r: 5 m s T yp . —> 2m s(T yp .).
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KM29V16000ATS
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Untitled
Abstract: No abstract text available
Text: SMFN004 SmartMedia Document Title 4M x 8 bit SmartMedia™ Card Revision Historv Revision No. H istorv Draft Date 0.0 D ata S hee t, 1997 1.0 D ata S hee t, 1998 1. C h a n g e d tB E R S Rem ark A pril 10th 1997 A pril 10th 1998 p a ra m e te r: 5m s T yp . —> 2 m s(T yp .)
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SMFN004
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29W8000T, KM29W8000IT Document Title 1M x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 D ata S h e e t 1997 April 10th 1997 A d va n ce 1.0 D ata S h e e t 1998 April 10th 1998 P relim in ary 1. C h a n g e d t BERS p a ra m e te r: 5m s T yp . —> 2 m s(T yp .)
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KM29W8000T,
KM29W8000IT
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Untitled
Abstract: No abstract text available
Text: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash E lectrical C h ip-E rase — 2 S ec o n d T yp ic al C h ip -E rase ■ Q uick-P ulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 4 S ec o n d C h ip -P ro g ram ■
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28F020
2048K
32-Pin
-80V05,
-80V05
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Untitled
Abstract: No abstract text available
Text: * \ p - 9 4 0 nm. Io n is m e a s u re d @ V c c - 10 V, Ee 1 m W /m . D evice M (N) (PI <WI Package Io n , m A Ion , m A 1on , m A Io n , m A Device D raw ing O utline M in . T yp. M in . Typ. M in . T yp. M in . Typ. 3o CSL P 3 0 0 M 1 I C CSL P 3 0 0 N 1 I C
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FE 1.1s
Abstract: No abstract text available
Text: YTFP151 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS h HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-OC CONVERTER AND HOTOR DRIVE APPLICATIONS. FEATURES: • low D rain-Source ON R esista nc e : R DS(ON)=0.045Q (T yp .)
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YTFP151
00A//tis
FE 1.1s
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29020
Abstract: No abstract text available
Text: i n y 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash E lectrical C h ip -E rase — 1 S ec o n d T yp ic al C h ip-E rase Q uick Pulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 2 S ec o n d C h ip -P ro g ram • ■ — M axim um L atch -U p Im m u n ity
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28F010
1024K
28F010-65
28F010-90
29020
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CA3049T
Abstract: A3102 transistor j307 3049T CA3102 J307
Text: CA3049, CA3102 ¡3 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB T yp . 200MHz The C A 3049 T and C A 3 102 consist of two independent
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CA3049,
CA3102
500MHz
200MHz
CA3049T
A3102
transistor j307
3049T
CA3102
J307
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1AX475R
Abstract: MARKING 1ED
Text: Panasonic Tantalim S o M E fe c to ]ytic Capacitors/ÏEH Surface Mount Type Tantalum Solid Electrolytic Capacitors S eries: T yp e : TEH T H igh reliab ility Surface mount type • Features • • • H ig h m o is tu re re s is ta n c e a t + 6 0 °C, 9 0 to 95 % R.H
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EE247
1AX475R
MARKING 1ED
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BN401
Abstract: I401
Text: A C INTERFACE INC 1QE D [ Q0S33fl3 OQODMB? 3 Niamey. BN401 J.-W 'H ' STANLEY INFRARED LED • Package Dimensions ■ FEATURES 1 High emission output (T yp . 0.8m W /sr at I f = 20m A ) (2) High directivity (3) Short distance from resin-mold surface to em itting position
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00S33fl3
BN401
00004ET
T-41-11
i\I401
100/is
BN401
I401
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Untitled
Abstract: No abstract text available
Text: Data Sheet 296051 FlashLite W ordw ide M em ory C a rd — Intel 28F010 NOV95REVA Product Features • Thin P ro file — PCM CIA T yp e I Package, 3.3 mm T hick ■ M em ory Capacity o f 256 KBytes based on Intel 28F010 Flash Technology ■ 150 ns A ccess Tim e
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28F010
NOV95REVA
28F010
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LN170WP38
Abstract: ta600
Text: n yt è Two Color Lighting Round Type 0 4.4mm Series T yp e No. L ig h tin g C olo r G re e n , O ra n g e LN 1 7 0 W P 3 8 • Absolute Maximum Ratings T a = 2 5 °C Lighting Color . P1; Orange ★ i d u ty 10 % , V ,.v •1 l. ■r * Green 90 30 90 30
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LN170WP38
1B81111
LN170WP38
ta600
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ET4000AX
Abstract: TSENG LABS Tseng Labs ET4000 CRTC 6845 ET4000AX LABS cj-cc schematic diagram cga to vga converter tseng SCHEMATIC mda VGA board ET4000
Text: Tseng Labs, Inc. 2 .0 APPLICATION NOTES 2.1 T yp ical B oard -level C on figuration PAGE 13 FIG. 2.1-1 TYPICAL ET4000-BASED BOARD DESIGN |SCHEMAT1C - AT BUS - 1 of 3 FIG. 2.1-1 TYPICAL ET4000-BASED BOARD DESIGN SCHEMATIC) - AT BUS - 2 o f 3 ro PAGE 16 FIG. 2.1 1 TYPICAL ET4000 BASED BOARD DESIGN (SCHEMATIC) - AT BUS - 3 of 3
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ET4000-BASED
CS16L
ET4000AX
TSENG LABS
Tseng Labs ET4000
CRTC 6845
ET4000AX LABS
cj-cc
schematic diagram cga to vga converter
tseng
SCHEMATIC mda VGA board
ET4000
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Untitled
Abstract: No abstract text available
Text: □ WF2M32-XXX5 WHITE /MICROELECTRONICS 2Mx325V FLASH MODULE AD VAN CED * FEATURES • A ccess Tim e of 9 0 ,1 2 0 ,150nS Com m ercial, Industrial, and M ilitaryT em p eratu re Ranges ■ Packaging: 5 Vo lt Read and W rite . 5V ± 1 0 % Supply. • 66-pin, PG A T yp e, 1.185 inch square, Herm etic Ceram ic HIP
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WF2M32-XXX5
2Mx325V
150nS
66-pin,
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Untitled
Abstract: No abstract text available
Text: Am27C1024 Advanced Micro Devices 1 Megabit 65,536 X 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time 100% Flashrite programming — 7 0 ns — T yp ica l p ro g ra m m in g tim e o f 8 s e c o n d s ■ Low power consumption — 20 Latch-up protected to 100 mA from -1 V to
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Am27C1024
16-Bit)
27C1024
06780I-8
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2sc 3050 transistor
Abstract: 2SC392 251C L200 vaac
Text: s c s /U D > N P N it:9 * s /F J i/7 b -* fê h 5 :/s tt9 392 ^ _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR O VHF, U H F * R F i» * ffl a VHF and UHF Band RF A m p lifier A p p llca tlo n e • I S U S rifift-r-f. NF=*ÆdB (T yp . • f S I Ü INDUSTRIAL APPLICATIONS
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asc392
800MHz)
2sc392
V0E-10V,
Ta-251C
800MHz
500MHz
800MHz
100MHz
2sc 3050 transistor
2SC392
251C
L200
vaac
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Untitled
Abstract: No abstract text available
Text: Intesrated DeviceTechnology. Inc 16-BIT CMOS MICROPROCESSOR SLICE IDT 49C403 IDT 49C403A FEATURES: DESCRIPTION: • M o no lith ic 16-bit C M O S yP S lice • R eplaces fo u r 2903As/29203s and a 2902A • Fast • Low p o w e r C M O S The ID T49C403 Is a hig h -sp ee d , fu lly ca s c a d a b le 16-bit CM OS
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16-BIT
49C403
49C403A
2903As/29203s
T49C403
2903s/29203s
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Untitled
Abstract: No abstract text available
Text: WF2M32-XXX WHITE /MICROELECTRONICS □ 2Mx3212V FLASH MODULE PRELIMINARY* FEATURES • A c c ess T im e s of 9 0 ,1 0 0 ,1 2 0 nS 12 V o lt P ro g ram m ing . 5 V ± 1 0 % S up p ly. ■ Packaging: Lo w P o w e r C M O S , 8 m A S ta n d b y T yp ic a l •
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WF2M32-XXX
2Mx3212V
66-pin,
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m37710
Abstract: MITSUBISHI MICROCOMPUTERS 7710
Text: MITSUBISHI MICROCOMPUTERS M377I0E4LXXXFP PROM VERSION of M 37710M 4LX X X FP DESCRIPTION • Low p o w e r dissipation The M37710E4LXXXFP is a bu ilt-in PROM s in g le -c h ip m i A t 3V supply voltage, 8M H z fre q u e n cy 12mW (T yp.) cro com pu ter d e s ig n e d w ith h igh -pe rform an ce C M O S s ili
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M377I0E4LXXXFP
37710M
M37710E4LXXXFP
80-pin
16-bit
37710E
m37710
MITSUBISHI MICROCOMPUTERS 7710
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MIL-STD-183
Abstract: 7c264 6135W
Text: CY7C261 CY7C263/CY7C264 p yp: v « *1 X X 8Kx 8 Power-Switched and Reprogrammable PROM - Features Functional Description • C M O S fo r o ptim u m sp ee d /p o w e r T h e C Y 7 C 2 6 1 , C Y 7C 263, and C Y 7 C 2 64 are high-perform ance 8192-w ord by 8-bit C M O S PRO M s. W hen de selected ,
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CY7C261
CY7C263/CY7C264
300-m
600-m
MIL-STD-183
7c264
6135W
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. FAST CMOS 16-BIT REGISTERED/LATCHED TRANSCEIVER WITH PARITY FEATURES: • • • • • 0 .5 M IC R O N C M O S T e c h n o lo g y T yp ica l tsk o (O u tput S kew ) < 2 5 0 p s , clo cke d m o de L o w in p u t an d o u tp u t leaka ge <1 (iA (m ax)
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16-BIT
4A25771
IDT54/74FCT162511AT/CT
16-BIT
E56-1
162511CT
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Untitled
Abstract: No abstract text available
Text: MI TSUBI SHI M E M O R Y C A R D FL A S H M E M O R Y CARDS MF84M1-G1EATXX 8/16-bit Data Bus Flash M e m o ry C ard C onn ector T yp e Two-piece 68-pin / ~ = 7 — DESCRIPTION T h e M F 84 M 1 - G 1 E A T X X w hich uses s i x t e e n • s ra s ab le and
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8/16-bit
MF84M1-G1EATXX
68-pin
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