13001 s 6d
Abstract: No abstract text available
Text: Automotive Grade Product Summary Features • AUIRS212 3,4 S Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune Gate drive supply range from 10 V to 20 V
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AUIRS212
AUIRS2123)
AUIRS2124)
AUIRS2123S
AUIRS2124;
13001 s 6d
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627A Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview Features Marking Symbol: QK
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2002/95/EC)
MTM86627A
MTM86627A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package Overview Features Marking Symbol: PK
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2002/95/EC)
MTM86627
MTM86627
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XTR20411
Abstract: XTR20412
Text: XTRM Series XTR20410 E HIGH-TEMPERATURE FAMILY OF N-CHANNEL POWER MOSFET WITH DRIVER DESCRIPTION ▲ Operation as low-side or high-side switch. ▲ Input-to-output stages offset voltage from -40V to +40V. ▲ Operational beyond the -60°C to +230°C temperature
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XTR20410
XTR20411:
XTR20412:
70nsec
90nsec
XTR20411
XTR20412
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te
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2002/95/EC)
2SK3547G
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KTQ-1
Abstract: AK4180 AK4180VT XP215
Text: [ASAHI KASEI] [AK4180] AK4180 Touch Screen Controller Features: General Description: Sampling Frequency: 125kHz max Pen Pressure Measurement On-Chip Thermo Sensor Two Auxiliary Analog Inputs Direct Battery Measurement 4-wire I/F On-Chip Voltage Reference(2.5V)
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AK4180]
AK4180
AK4180
12-bit
125kHz
MS0195-E-01>
KTQ-1
AK4180VT
XP215
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4181avt
Abstract: 001H AK4181A AK4181AVT capacitive touch screen theory pen driver circuit diagram
Text: ASAHI KASEI [AK4181A] AK4181A Touch Screen Controller General Description: The AK4181A is a 4-wire touch screen controller that incorporates a 12-bit 125kHz sampling SAR A/D converter. The AK4181A can detect the pressed screen location by performing two A/D conversions. In addition to location, the
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AK4181A]
AK4181A
AK4181A
12-bit
125kHz
MS0313-E-00
4181avt
001H
AK4181AVT
capacitive touch screen theory
pen driver circuit diagram
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AK4181AVT
Abstract: 4181A pen driver circuit diagram AKM4181AVT
Text: [AK4181A] AK4181A Touch Screen Controller General Description: The AK4181A is a 4-wire touch screen controller that incorporates a 12-bit 125kHz sampling SAR A/D converter. The AK4181A can detect the pressed screen location by performing two A/D conversions. In addition to location, the
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AK4181A]
AK4181A
125kHz
16pin
AK4181A
12-bit
MS0313-E-02
AK4181AVT
4181A
pen driver circuit diagram
AKM4181AVT
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Untitled
Abstract: No abstract text available
Text: ASAHI KASEI [AK4182A] Touch Screen Controller AK4182A General Description: The AK4182A is a 4-wire resistive touch screen controller that incorporates a 12-bit 125 kHz sampling SAR type A/D converter. The AK4182A operates down to 2.2V supply voltage and supports digital I/O interface voltage from 1.5V to VCC in
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AK4182A]
AK4182A
AK4182A
12-bit
MS0482-E-01
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fastest finger first indicator block diagram
Abstract: top 256 yn AK4182AVN resistive touch screen theory 001H AK4182A BLOCK DIAGRAM OF TOUCH PLATE 4182A pen driver circuit
Text: ASAHI KASEI [AK4182A] Touch Screen Controller AK4182A General Description: The AK4182A is a 4-wire resistive touch screen controller that incorporates a 12-bit 125 kHz sampling SAR type A/D converter. The AK4182A operates down to 2.2V supply voltage and supports digital I/O interface voltage from 1.5V to VCC in
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AK4182A]
AK4182A
AK4182A
12-bit
AK4182Asupport
MS0482-E-01
fastest finger first indicator block diagram
top 256 yn
AK4182AVN
resistive touch screen theory
001H
BLOCK DIAGRAM OF TOUCH PLATE
4182A
pen driver circuit
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na
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2002/95/EC)
2SK3539G
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fastest finger first indicator block diagram
Abstract: 4182A 001H AK4182A AK4182AVN capacitive touch screen theory top 256 yn
Text: ASAHI KASEI [AK4182A] AK4182A Touch Screen Controller General Description: The AK4182A is a 4-wire resistive touch screen controller that incorporates a 12-bit 125 kHz sampling SAR type A/D converter. The AK4182A operates down to 2.2V supply voltage and supports digital I/O interface voltage from 1.5V to VCC in
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AK4182A]
AK4182A
AK4182A
12-bit
MS0482-E-00
fastest finger first indicator block diagram
4182A
001H
AK4182AVN
capacitive touch screen theory
top 256 yn
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fastest finger first indicator block diagram
Abstract: top 256 yn 001H AK4182 AK4182VN
Text: ASAHI KASEI [AK4182] AK4182 Touch Screen Controller General Description: The AK4182 is a 4-wire resistive touch screen controller that incorporates a 12-bit 125 kHz sampling SAR type A/D converter. The AK4182 operates down to 2.2V supply voltage and supports digital I/O interface voltage from 1.5V to VCC in
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AK4182]
AK4182
AK4182
12-bit
MS0411-E-00
fastest finger first indicator block diagram
top 256 yn
001H
AK4182VN
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Diode marking TY
Abstract: GE 027
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MALD068XG Silicon planar type For ESD protection • Package MALD068XG is optimal for cell phones and AV application, all types of I/O circuits. It is possible to protect against forward and reverse surges.
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EU2002/95/EC)
MALD068XG
IEC61000-4-5
IEC61000-4-2
150mWachievedwithaprintedcircuitboard.
Diode marking TY
GE 027
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D30L60
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode •¿m H D30L60 OUTLINE Unit : mm W eight 4.3« T yp P a c k a g e : IT O -3 P 5.5 15 600V 30A a -Æ H K W ) Date code N Feature • raiHŒ FRD • • • • • e y -fX • trr=150ns • yJlst-Jb F S3T High Voltage Super FRD
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D30L60
150ns
D30L60
J533-1
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LE 79A
Abstract: diode MARKING CODE 917 a915 BAS79D
Text: Silicon Switching Diodes BAS 79A. BAS 79D • Switching applications • High breakdown voltage • Common cathode T yp e Marking BAS 79A BAS79B O rdering code 12 -m m tape Package* BAS79A Q62702 - A914 SOT-223 BAS79B Q62702 - A915 SOT-223 BAS79C BAS79C
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BAS79B
BAS79C
BAS79D
BAS79A
Q62702
LE 79A
diode MARKING CODE 917
a915
BAS79D
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diode marking gg 2a
Abstract: BAW79C 79AB
Text: Silicon Switching Diodes • • • BAW 79 A BAW 79 D For high-speed switching High breakdown voltage Common cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape Package GE GF
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
diode marking gg 2a
BAW79C
79AB
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BAV170
Abstract: JXs sot
Text: Silicon Low Leakage Diode Array BAV170 • Low Leakage applications • Medium speed switching times • Common cathode Type Marking O rdering code 8-m m tape Package BAV170 JXs Q62702-A920 SOT 23 Maximum Ratings D escription Symbol Reverse voltage VR BAV170
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BAV170
Q62702-A920
BAV170
100ns
JXs sot
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DIODE S2v 73
Abstract: DIODE in s2v shindengen rectifier SHINDENGEN DIODE DIODE S2v 50 DIODE S2v S2V60
Text: -A S æ fE ^ *-K 7 Rectifier Diode Axial Diode OUTLINE DIMENSIONS S2V Case : 1.0 <f> Um l ; mm W e ig h t : 69g 24 MIS *4 8"“ , 73 1 600V 1.7A llfg M ° M > © _ Marking ffl C o lo r code, Cathode band i í • -B- © CD •M W Œ Red : S2V20 îj w
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S2V20
S2V20
S2V60
DIODE S2v 73
DIODE in s2v
shindengen rectifier
SHINDENGEN DIODE
DIODE S2v 50
DIODE S2v
S2V60
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DIODE FAST S2L
Abstract: DIODE s2l S2L60 S2L DIODE "S2L" DIODE
Text: n - n x V 'C X - Y Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS S2L60 600V 1-5A CD 26.5±2 • Unit • mm Package I AX10 <¡>4.4-0. 26.5« 7-0 h iîj ïl l d <> •trr50ns -N - •:-tSEPB*[ Marking S2L 07 •P F C / •SRSÍÜ • ^ B s O A ffi'E
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S2L60
trr50ns
J515-5
DIODE FAST S2L
DIODE s2l
S2L60
S2L DIODE
"S2L" DIODE
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diode GG 79
Abstract: BAW 79 W 79AB
Text: SIEMENS Silicon Switching Diodes • For high-speed switching • High breakdown voltage • Com mon cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D BAW 79 A . BAW 79 D Marking Ordering Code tape and reel GE GF GG GH Q62702-A781 Q 62702-A782 Q62702-A771
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Q62702-A781
62702-A782
Q62702-A771
Q62702-A733
EHA07003
EH800I00
diode GG 79
BAW 79 W
79AB
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TRANSISTOR SMD MARKING CODE kd
Abstract: No abstract text available
Text: BSP 123 Infineon t echnologi es SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •W = a8 -2 0V Type Vbs b f lDS on) Package Marking 0.38 A 6n SOT-223 BSP 123 BSP 123 100 V Type Ordering Code Tape and Reel Information
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OT-223
Q67000-S306
E6327
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
TRANSISTOR SMD MARKING CODE kd
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3sm diode
Abstract: 3SM* diode
Text: Schottky Barrier Diod» Axiaf Diode • W B -tfäsH , O U T L IN E DIM ENSIONS Case : Axial S3S6M 60V 3A 25±2 t 0.5 7 -0 ^0.2 0 4 . 4 - 0 .1 25±2 0— 14— 0 • * } £ E i] iti? 3 E i Marking Color code Blue 3SM 62- r ■ SÊfèf? -o v b tz n m ) Date code
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S5151 DIODE
Abstract: S5151 Diode S5151 S-5051A1 s5c diode S-5150A3 DIODE S51 5030a DIODE MARKING CODE B3
Text: Model S-5000 Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Tem p. Range -25°C TO + 7 5 °C Storage Tem p. Range -25°C TO + 7 5 °C Sealing M ethod 0 Ring Sealed Electrical Contact Rating N on-Sw itching
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S-5000
-5010A
S-5030A-
S5151 DIODE
S5151
Diode S5151
S-5051A1
s5c diode
S-5150A3
DIODE S51
5030a
DIODE MARKING CODE B3
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