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Catalog Datasheet	MFG & Type	PDF	Document Tags
YA868C15 Abstract: No abstract text available Text: DATE CHECKED Device Name ： Type Name ： YA868C15R Spec. No. ： MS5D1808 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any	Original	PDF	YA868C15R MS5D1808 H04-004-07 H04-004-03 YA868C15
YA868C15 Abstract: YA868C15R Text: YA868C15R 30A (150V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10+0.5 30 Tc=25°C MAX. 3.7±0.2 IO V V A 1.2 14 -0.5 150 0.90 15±0.2 Characteristics YA868C15R Units Condition 6.4±0.2 2.7±0.1 Major characteristics VRRM VF 4.5±0.2	Original	PDF	YA868C15R YA868C15R O-220 YA868C15
mp2a5100 Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 Text: 富士電機半導体総合カタログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors	Original	PDF	RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
YA868C15 Abstract: ya868c12 YG972S6 yg862c15 yg865c15 YG862C15R YG975C6R YA865C12R yg971s6 YG862C12R Text: 整流ダイオード / Rectifier Diodes • 高耐圧ショットキーバリアダイオード High Voltage Schottky-Barrier Diodes（SBD）デュアル 2 in one-package 形式 Device type YA862C12R YG862C12R TS862C12R YA865C12R YG865C12R TS865C12R	Original	PDF	O220AB O220F YA971S6R YG971S6R YA972S6R YG972S6R YA868C15 ya868c12 YG972S6 yg862c15 yg865c15 YG862C15R YG975C6R YA865C12R yg971s6 YG862C12R