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    Y626 Price and Stock

    Infineon Technologies AG CY6264-70SNC

    IC SRAM 64KBIT PARALLEL 28SOIC
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    DigiKey CY6264-70SNC Tube
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    Infineon Technologies AG CY6264-70SNXC

    IC SRAM 64KBIT PARALLEL 28SOIC
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    DigiKey CY6264-70SNXC Tube
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    JRH Electronics 770-009Y626W1

    CONNECTOR BACKSHELL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 770-009Y626W1 Bulk 1
    • 1 $3440.95
    • 10 $3440.95
    • 100 $2408.6643
    • 1000 $2408.6643
    • 10000 $2408.6643
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    Infineon Technologies AG CY6264-70SNXA

    IC SRAM 64KBIT PARALLEL 28SOIC
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    DigiKey CY6264-70SNXA Tube 270
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    Vishay Sfernice P0603Y6260BBT

    SFERNICE THIN FILMS
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    DigiKey P0603Y6260BBT Reel 100
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    • 100 $4.6721
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    Y626 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA 549 Class 130B transformer

    Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
    Text: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.


    Original     		PDF 000pF 000pF 0201ZD103KAT2A 0201ZC103KAT2A 0201YC101KAT2A 0201YC271KAT2A 0201YC471KAT2A 02013A1R0CAT2A 02013A4R7CAT2A 02013A100JAT2A EIA 549 Class 130B transformer mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR

    920c5

    Abstract: HY6264A-10 HY6264A 4A-10 HY6264A-12 HY6264A-15 HY6264A-70 HY6264A-85 C0553
    Text: HYUNDA SEMICONDUCTO 8KX 8-Bit CMOS SRAM M261201B-MAY92 DESCRIPTION FEATURES The H Y6264A is a high speed, low power 8,192 words by 8-bit CMOS static RAM fabrica­ ted using a twin tub CMOS process technolo­ gy. This high reliability process coupled with innovative circuit design techniques, yields


    OCR Scan     		PDF M261201B-MAY92 HY6264A speed-70/85/100/120/150ns PACKAGE-600MIL PACKAGE-330MIL 920c5 HY6264A-10 4A-10 HY6264A-12 HY6264A-15 HY6264A-70 HY6264A-85 C0553

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS Y6264 8K x 8 Static RAM Features • 55,70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CEj, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected F unctional D escription


    OCR Scan     		PDF CY6264 Y6264 CY6264 330-mil-wide CY6264â 28-Lead 330-Mil

    HY6264 RAM

    Abstract: No abstract text available
    Text: Y6264 HYUNDAI • ■ SEMICONDUCTOR »k x 8« S ilS M 2212 0 1 B-APR91 DESCRIPTION FEATURES The Y6264 is a high speed, low power 8,192 words by 8-bit CM OS static RAM fabrica­ ted using high performance CM OS process te­ chnology. This high reliability process coupled


    OCR Scan     		PDF HY6264 B-APR91 HY6264 HY6264 RAM