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    Y4 TRANSISTOR Search Results

    Y4 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    Y4 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    xps-CM

    Abstract: telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch
    Text: Telemecanique XPS-CM U+ U– A1 UV Y4 Y5 Y33 Y3 Z1 Z3 H1 T1 13 23 Y1 Y2 VE NT TY PE Muting Start Y4 34 2 UV Y64 Y54U– 4U+ Muting 1 Start N TA XP S - Y33 13 23 Y1 Y2 UV H1 2 CM + 4 Y34 Y4 14 24 4 Y54 Y6 4 4 Y54 Y6 4 se ed requir /A2-Fu 1 – A1 command -24 closed


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    PDF 14IES 4V/20mA) A/143/00 xps-CM telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch

    MSM6352

    Abstract: QFP44-P-910-0 hsf1
    Text: E2E0011-27-Y4 ¡ Semiconductor MSM6352 ¡ Semiconductor This version: Jan. 1998 MSM6352 Previous version: Mar. 1996 Built-in DTMF Generator 4-Bit Microcontroller GENERAL DESCRIPTION The MSM6352 is a high-performance 4-bit microcontroller employing complementary metal


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    PDF E2E0011-27-Y4 MSM6352 MSM6352 QFP44-P-910-0 80-2K hsf1

    HVo5 diode

    Abstract: transistor bipolar driver schematic transistor r3n vfd circuit diagram MSC1164 MSC1164GS-K MSC1164SS SSOP32-P-430-1
    Text: E2C0011-27-Y4 ¡ Semiconductor MSC1164 ¡ Semiconductor This version: Nov. 1997 MSC1164 Previous version: Jul. 1996 20-Bit Grid/Anode Driver GENERAL DESCRIPTION The MSC1164 is a monolithic IC using the Bi-CMOS process technology for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register


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    PDF E2C0011-27-Y4 MSC1164 20-Bit MSC1164 32-pin HVo5 diode transistor bipolar driver schematic transistor r3n vfd circuit diagram MSC1164GS-K MSC1164SS SSOP32-P-430-1

    MSC1163

    Abstract: R3N datasheet 30KW VFD Diagram transistor r3n MSC1163GS MSC1163GS-BK
    Text: E2C0010-27-Y4 ¡ Semiconductor MSC1163 ¡ Semiconductor This version: Nov. 1997 MSC1163 Previous version: Jul. 1996 40-Bit Anode Driver GENERAL DESCRIPTION The MSC1163 is a monolithic IC using the Bi-CMOS process for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register and latch is


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    PDF E2C0010-27-Y4 MSC1163 40-Bit MSC1163 60-pin SSOP60-P-700-0 65-BK R3N datasheet 30KW VFD Diagram transistor r3n MSC1163GS MSC1163GS-BK

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y4 1.4 1.6


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    PDF TT4-EA-13067 FL6L52070L UL-94

    K72 V3

    Abstract: transistor bipolar k72 transistor k72 x5 transistor k72 t8 D5024 k72 v6 transistor k72 v6 k104 transistor grease k67 transistor k79
    Text: ORDER NO. CPD0512063C1 Personal Computer CF-Y4 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-Y4HWPZZ 1 2 1: Operation System B: Microsoft Windows® XP Professional 2: Area M: Refer to above area table 2005 Matsushita Electric Industrial Co., Ltd. All rights reserved.


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    PDF CPD0512063C1 EN60825 IC613 C0DBDJH00009 LTC4008EGN JS606 JS609 B1CFGD000004 2SK3019TL K72 V3 transistor bipolar k72 transistor k72 x5 transistor k72 t8 D5024 k72 v6 transistor k72 v6 k104 transistor grease k67 transistor k79

    SEG23

    Abstract: 3525 PWM analog dimming circuit 7 segment display duplex led type
    Text: E2C0016-27-Y4 ¡ Semiconductor MSC1200-xx/1200V-xx ¡ Semiconductor This version: Nov. 1997 MSC1200-xx/1200V-xx Previous version: Jul. 1996 30-Bit Duplex Controller/Driver with Digital/Analog Dimming and Keyscan Functions GENERAL DESCRIPTION The MSC1200-xx/1200V-xx is a Bi-CMOS display driver for 1/2-duty vacuum fluorescent


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    PDF E2C0016-27-Y4 MSC1200-xx/1200V-xx 30-Bit MSC1200-xx/1200V-xx 64-bit QFP56-P-910-0 65-2K SEG23 3525 PWM analog dimming circuit 7 segment display duplex led type

    XPS-AV

    Abstract: telemecanique emergency stop telemecanique emergency stop relay telemecanique safety relays telemecanique contactor 24V 5A VDE RELAY telemecanique relays telemecanique relay safety telemecanique telemecanique switch telemecanique
    Text: Telemecanique XPS-AV 37 47 13 23 4 Y74 Y84 Y6 S12 2 S11 S14 Y+ S13 S31 S3 A1 9 Y4 4 Y3 3 S3 2 S3 A2 1 S2 58 57 48 04 38 03 24 14 Module de surveillance pour circuits d’ARRET D’URGENCE selon EN 418 / EN 60204-1 Safety relay for monitoring EMERGENCY STOP circuits


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    PDF A2S22 EN954-1 A/133/01 XPS-AV telemecanique emergency stop telemecanique emergency stop relay telemecanique safety relays telemecanique contactor 24V 5A VDE RELAY telemecanique relays telemecanique relay safety telemecanique telemecanique switch telemecanique

    transistor Y4

    Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
    Text: FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


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    PDF FMB1020 300mA. 100uA 100mA 150mA 200mA, 100MHz 100uA, fmb1020 transistor Y4 marking 004 Supersot 6 complementary npn-pnp marking Y4 150MA80

    2SC2412K

    Abstract: 2sc2412k smt6 2SA1037AK T108 T148
    Text: UMY4N / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors UMY4N / UMZ2N / FMY4A / IMZ2A (1) (5) 1.3 (2) 0.2 (4) UMY4N (3) !External dimensions (Units : mm) 0.65 0.65 !Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a UMT or SMT package.


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    PDF 2SA1037AK 2SC2412K 120mW 200mW SC-88A 100MHz 50mA/5mA 2sc2412k smt6 T108 T148

    mark a7 sot23 DIODE

    Abstract: GRM188R71H104K Y2 sot23 mark MARK Y6 Transistor Y5 sot23 C0603C224K4RAC C1608X5R0J106M C1608X7R1H104K GRM188R60J106M GRM188R71H221K
    Text: 19-0855; Rev 0; 7/07 MAX17010 Evaluation Kit Features The MAX17010 evaluation kit EV kit is a fully assembled and tested surface-mount printed circuit board (PCB) that provides the voltages and features required for active-matrix, thin-film transistor (TFT), liquid-crystal


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    PDF MAX17010 300mA MAX17010 mark a7 sot23 DIODE GRM188R71H104K Y2 sot23 mark MARK Y6 Transistor Y5 sot23 C0603C224K4RAC C1608X5R0J106M C1608X7R1H104K GRM188R60J106M GRM188R71H221K

    marking code z2

    Abstract: 2SA1037AK 2SC2412K T108 T148 2SC2412 T1483
    Text: EMZ2 / UMY4N / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors EMZ2 / UMY4N / UMZ2N / FMY4A / IMZ2A zFeatures 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. zExternal dimensions (Units : mm) (3) 0.22 (4) (5)


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    PDF 2SA1037AK 2SC2412K 100MHz 50mA/5mA marking code z2 T108 T148 2SC2412 T1483

    Untitled

    Abstract: No abstract text available
    Text: TARGET DATA SHEET ECM051 4 X 4 mm Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM051 is a 10 signal pin 4 X 4 mm dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide Heterojunction Bipolar Transistor HBT process. It is optimized for cellular CDMA (digital) and AMPS


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    PDF ECM051 ECM051 SS-000505-000

    Untitled

    Abstract: No abstract text available
    Text: E2C0010-27-Y4 O K I Semiconductor Previous version: Jul. 1996 MSC1163 40-Bit Anode Driver GENERAL DESCRIPTION The MSC1163 is a monolithic IC using the Bi-CMOS process for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register and latch is


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    PDF E2C0010-27-Y4 MSC1163 40-Bit MSC1163 60-pin

    Untitled

    Abstract: No abstract text available
    Text: E2C0011-27-Y4 O K I Semiconductor Previous version: Jul. 1996 M SC1164 20-Bit Grid/Anode Driver GENERAL DESCRIPTION The MSC1164 is a monolithic IC using the Bi-CMOS process technology for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register


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    PDF E2C0011-27-Y4 SC1164 20-Bit MSC1164 32-pin MSC1164

    Untitled

    Abstract: No abstract text available
    Text: E2C0011-27-Y4 O K I Semiconductor Previous version: Jul. 1996 M S C 1164 ~ 20-Bit Grid/Anode Driver GENERAL DESCRIPTION The MSC1164 is a monolithic IC using the Bi-CMOS process technology for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register


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    PDF E2C0011-27-Y4 20-Bit MSC1164 32-pin MSC1164 SDIP30-P-400-1

    HV010

    Abstract: transistor bipolar driver schematic HV020 MSC1164 MSC1164GS-K MSC1164SS SSOP32-P-430-1 HV09
    Text: E2C0011-27-Y4 O K I Semiconductor P revious version: Jul. 1996 M S C 1 1 6 4 ~ 20-Bit Grid/Anode Driver GENERAL DESCRIPTION The M SC1164 is a monolithic IC using the Bi-CM OS process technology for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register


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    PDF E2C0011-27-Y4 MSC1164 20-Bit MSC1164 32-pin VoltaMSC1164 SDIP30-P-400-1 HV010 transistor bipolar driver schematic HV020 MSC1164GS-K MSC1164SS SSOP32-P-430-1 HV09

    QFP PACKAGE thermal resistance

    Abstract: transistor bipolar driver schematic MSC1163 MSC1163GS-BK HV02 high power driver circuit diagram
    Text: E2C0010-27-Y4 O K I Semiconductor P revious version: Jul. 1996 M S C 1 1 6 3 ~ 40-Bit Anode Driver GENERAL DESCRIPTION The M SC1163 is a m onolithic IC using the Bi-CM OS process for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register and latch is


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    PDF E2C0010-27-Y4 MSC1163 40-Bit MSC1163 60-pin SSOP60-P-700-0 65-BK QFP PACKAGE thermal resistance transistor bipolar driver schematic MSC1163GS-BK HV02 high power driver circuit diagram

    2PA733

    Abstract: 2PC945 bt 824
    Text: N AMER PHILIPS/DISCRETE bTE D • ^ 5 3 ^ 3 1 00201Ô5 T7S M A P X A Ü K U y4Ö SILICON SMALL-SIGNAL TRANSISTOR NPN small-signal tran sisto r, in a p la sticT O -9 2 envelope. I t is intended fo r use in audio a m p lifie r d rive r stages and lo w speed sw itching a pplications etc.


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    PDF plasticTO-92 2PA733. 2PA733 2PC945 bt 824

    DM74LS126AN

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm DM74LS126A Quad 3-STATE Buffer Buffer Connection Diagram Dual-ln-Line Package V cc C4 A4 Y4 C3 A3 Y3 DSOO6388-1 Order Number DM74LS126AM or DM74LS126AN See Package Number M14A or N14A Function Table Y = A Inputs Output A C L H L


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    PDF DM74LS126A DM74LS126A 14-Lead DM74LS126AM DM74LS126AN

    analog dimming circuit

    Abstract: sem 3040 ic
    Text: E2C0016-27-Y4 O K I Semiconductor Previous version: Jul. 1996 M S C 1 2 0 0 -X X /1 2 0 0 V -X X 30-Bit Duplex Controller/Driver with Digital/Analog Dimming and Keyscan Functions GENERAL DESCRIPTION The M SC1200-xx/1200V -xx is a Bi-CMOS display driver for 1 /2-d u ty vacuum fluorescent


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    PDF E2C0016-27-Y4 30-Bit SC1200-xx/1200V 64-bit SC1200-01/1200V -if01 analog dimming circuit sem 3040 ic

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


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    PDF FMB1020 300mA. 10OuA 100mA 150mA 200mA, 100MHz 10OuA, fmb1020

    2sc2412k smt6

    Abstract: marking code y4 Rohm part marking Z2 marking Z2 Rohm marking Z2 dual transistors sMT5 "marking Y4" 28-o FMY4A marking Y4
    Text: UMY4N / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors UMY4N / UMZ2N / FMY4A / IMZ2A •Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a UMT or SMT package. •External dimensions (Units: mm) UMY4N •Absolute maximum ratings (Ta = 25°C)


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    PDF 2SA1037AK 2SC2412K 120mW 200mW 50tiA 50mA/5mA 100MHz 2sc2412k smt6 marking code y4 Rohm part marking Z2 marking Z2 Rohm marking Z2 dual transistors sMT5 "marking Y4" 28-o FMY4A marking Y4

    NTE74LS193

    Abstract: NTE74181 B431Z NTE74LS181 NTE74LS194A NTE74197 NTE74182 NTE74193 32 bit carry select adder code NTE74185
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74181, 24-Lead DIP, See Diag. 252 NTE74LS181, NTE74S181 Arithmetic Logic Unit/Function Generator 16-Lead DIP, See Diag. 249 NTE74182, NTE74S182 Look-Ahead Carry Generator NTE74H183 14-Lead DIP, See Diag. 247


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    PDF NTE74181, 24-Lead NTE74LS181, NTE74S181 NTE74182, NTE74S182 16-Lead NTE74H183 14-Lead NTE74196, NTE74LS193 NTE74181 B431Z NTE74LS181 NTE74LS194A NTE74197 NTE74182 NTE74193 32 bit carry select adder code NTE74185