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    Y22 TRANSISTOR SMD Search Results

    Y22 TRANSISTOR SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    Y22 TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking Y22 smd

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1461 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High gain bandwidth product: fT=510MHz. 0.4 3 High speed switching: tstg=110ns. 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF OT-23 510MHz. 110ns. -50mA -10mA marking Y22 smd

    SMD Transistor Y12

    Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
    Text: Technical Information Type Designation in Accordance with Pro Electron 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.


    Original     		PDF

    UJT APPLICATION

    Abstract: SMD Transistor Y12 "tunnel diode" oscillator SMD transistor y11 Y22 transistor smd SMD Transistor g22 y22c NF50 y-parameter Technical Explanations power transistor
    Text: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.


    Original     		PDF

    germanium diode smd

    Abstract: "tunnel diode" oscillator SMD Transistor Y12 "Step Recovery Diode" NF50 Z2E diode Technical Explanations power transistor tunnel diode diode varactor B11 g21 SMD Transistor
    Text: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.


    Original     		PDF

    transistor smd bc rn

    Abstract: SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 SMD transistor BC RN transistor ic equivalent book smd y12 GaAs tunnel diode Common collector configuration basic applications of ujt
    Text: GaAs Components Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.


    Original     		PDF

    Nordmende

    Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model
    Text: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


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    motorola JFET 2N3819

    Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current


    Original     		PDF MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 motorola JFET 2N3819 C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA

    motorola JFET 2N3819

    Abstract: Y12 SO-16 transistor u310 VK200 rfc BC238 h parameter BC237 6 21 X2 marking code sot 363 BF245 common emitter amplifier for transistor bc107 sod-123 marking L2s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBFU310LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol


    Original     		PDF MMBFU310LT1 236AB) Gat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 motorola JFET 2N3819 Y12 SO-16 transistor u310 VK200 rfc BC238 h parameter BC237 6 21 X2 marking code sot 363 BF245 common emitter amplifier for transistor bc107 sod-123 marking L2s

    symbol transistor BC108

    Abstract: BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion J308 J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate–Source Voltage VGS


    Original     		PDF 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 symbol transistor BC108 BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA

    K105 transistor

    Abstract: K110 B3 transistor k105 transistor C458 transistor C639 varistor 520 k14 Diode C84 009 pct303 g5020 toshiba l500
    Text: ORDER NO. CPD0212020C0 Personal Computer CF-T1 This is the Service Manual for the following areas. M …for U.S.A. and Canada E …for U.K. G …for Germany Model No. CF-T1R64ZZ1 2 1: Operation System G: Microsoft Windows® XP Professional MUI K: Microsoft® Windows® XP Professional


    Original     		PDF CPD0212020C0 CF-T1R64ZZ1 65536/16M dots/1024 dots/1280 UNR9113J0L K105 transistor K110 B3 transistor k105 transistor C458 transistor C639 varistor 520 k14 Diode C84 009 pct303 g5020 toshiba l500

    Sony Semiconductor Replacement Handbook 1991

    Abstract: 2sc5088 horizontal transistors tcxo philips 4322 20000w audio amplifier circuit diagram replacement for 2sc5088 horizontal transistors motorola power fet rf databook 2SK170BL Funkamateur transistor 1060 schematic diagram tv sony
    Text: Philips RF Manual product & design manual for RF small signal discretes 3 edition July 2003 rd / discretes/documentation/rf_manual Document number: 4322 252 06384 Date of release: July 2003 3rd edition


    Original     		PDF

    PN547

    Abstract: D1545 transistor transistor A562 a562 transistor d1545 PN521 dh52 D1136 7416373 b1658
    Text: Freescale Semiconductor User’s Guide PTKIT8102UG Rev. 1, 9/2005 MSC8102 Packet Telephony Farm Card MSC8102PFC The MSC8102 packet telephony farm card (MSC8102PFC) is a PCI telephony mezzanine card (PTMC) for evaluating media gateway products. This card is designed around the StarCore


    Original     		PDF PTKIT8102UG MSC8102 MSC8102PFC) 16-bit MSC8102PFC MSC8101 PN547 D1545 transistor transistor A562 a562 transistor d1545 PN521 dh52 D1136 7416373 b1658

    PDTA144E

    Abstract: lqfp-176 pcb LAYOUT VARTA L2 400 max1909 915gm c838 transistor transistor C730 foxconn transistor c708 transistor C715 Transistor HA17
    Text: 1 A B C 2 3 4 5 6 7 8 Schematics Page Index Title / Revision / Change Date Page Title of Schematics Page Title of Schematics Page Rev. Date Page 01 Title 0.2 050523 26 SCREW HOLE & PAD 02 BLOCK DIAGRAM 0.2 050523 27 MINI-PCI 03 Dothan(HOST BUS) 1/2 0.2 050523 28 LAN (82562ET)


    Original     		PDF 82562ET) CK-410M) KB3910 NV44M) 47ohm. 56ohm MS03-1-01 PDTA144E lqfp-176 pcb LAYOUT VARTA L2 400 max1909 915gm c838 transistor transistor C730 foxconn transistor c708 transistor C715 Transistor HA17

    KB3910SF-C1

    Abstract: KB3910SFC1 MMVZ5235BPT NVIDIA schematics vga nvidia transistor C871 transistor r14 ah16 hs8108 transistor C372 nvidia gpu BGA
    Text: 1 A B C 2 3 4 5 6 7 Schematics Page Index Title / Revision / Change Date Page Title of Schematics Page Title of Schematics Page Rev. Date Page 01 Index Page 1.00 051123 26 SCREW HOLE & PAD 02 BLOCK DIAGRAM 1.00 051123 27 MINI-PCI 03 Dothan(HOST BUS) 1/2


    Original     		PDF 82562ET) CK-410M) KB3910SFC1 NV44M) nMAX1845EEI MAX8743EEI MAX1845EEI MS04-1-01 IRF7821PBF KB3910SF-C1 MMVZ5235BPT NVIDIA schematics vga nvidia transistor C871 transistor r14 ah16 hs8108 transistor C372 nvidia gpu BGA

    WPCE773LA0DG

    Abstract: G5285T11U-GP ICS9LPRS365B g31 crb WPCE773LA intel g41 crb Realtek ALC269Q High Definition Audio g41 crb WPCE773LA0DG, ALC269 diode af52
    Text: 5 4 3 JM41 Block Diagram Intel D CLK GEN. 1 Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.011 REVISION : 08266-1 SYSTEM DC/DC 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 PCB STACKUP 3D3V_AUX_S5 Thermal Sensor CPU TOP L1 S L2 32 EMC2103


    Original     		PDF ICS9LPRS365B 4CQ01 TPS51125 EMC2103 RT8202 667/800/1066MHz PCIex16 RT9571 WPCE773LA0DG G5285T11U-GP ICS9LPRS365B g31 crb WPCE773LA intel g41 crb Realtek ALC269Q High Definition Audio g41 crb WPCE773LA0DG, ALC269 diode af52

    WPCE773LA0DG

    Abstract: TPS51125 Atheros AR8131 WISTRON power sequence RT8202 Realtek ALC269Q High Definition Audio NDS0610-NL-GP X-14D31818M-35GP Wistron Corporation winbond wpce773la0dg
    Text: 5 4 3 JM41 Block Diagram Intel D CLK GEN. 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SA REVISION : 08266-SA 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 PCB STACKUP 3D3V_AUX_S5 Thermal Sensor CPU TOP L1 S L2 32 EMC2103


    Original     		PDF ICS9LPRS365B 4CQ01 08266-SA TPS51125 EMC2103 RT8202 667/800/1066MHz PCIex16 WPCE773LA0DG TPS51125 Atheros AR8131 WISTRON power sequence RT8202 Realtek ALC269Q High Definition Audio NDS0610-NL-GP X-14D31818M-35GP Wistron Corporation winbond wpce773la0dg

    WPCE773LA0DG

    Abstract: gfx E3 diode ST330U2D5VDM-13GP GP 823* DIODE 2gp Transistor GFX DIODE 4gp transistor intel g41 crb jm41 TPS51125
    Text: 5 4 3 CLK GEN. 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 PCB STACKUP 3D3V_AUX_S5 Thermal Sensor TOP L1 S L2 VCC/GND 32 EMC2103 3 L3 S L4 D 37 RT8202 SMSC Penryn SFF ICS9LPRS365B 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SA


    Original     		PDF ICS9LPRS365B 4CQ01 08266-SA TPS51125 EMC2103 RT8202 667/800/1066MHz PCIex16 WPCE773LA0DG gfx E3 diode ST330U2D5VDM-13GP GP 823* DIODE 2gp Transistor GFX DIODE 4gp transistor intel g41 crb jm41 TPS51125

    20000w audio amplifier circuit diagram

    Abstract: Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767
    Text: 2nd edition RF Manual product & design manual for RF small signal discretes product & design manual for RF small signal discretes 2nd edition October 2002 Page: 1 2nd edition RF Manual product & design manual for RF small signal discretes Content 1. 2. 3.


    Original     		PDF BB202, BGA6589 20000w audio amplifier circuit diagram Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767

    88E1119R

    Abstract: 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide August 2012 Revision: EB62_01.5  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


    Original     		PDF 25MHz HDR40 ATS120SM-1 HC-49/US-SM 25MHZ 1K-0402SMT 20K-0402SMT 100PF-0402SMT 3UF-10V-0805SMT HC49US-25 88E1119R 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13

    88E1119R

    Abstract: 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide February 2012 Revision: EB62_01.4  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


    Original     		PDF HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X 100PF-0402SMT 88E1119R 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13

    npn transistor smd w19

    Abstract: LFE3-35E-FN484CES 88e1119r 88E1119 AA19 smd diode smd transistor w17 pDS4102-DL diode C238 88E111 FTD2232
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide July 2013 Revision: EB62_01.6  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


    Original     		PDF 25MHZ HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X npn transistor smd w19 LFE3-35E-FN484CES 88e1119r 88E1119 AA19 smd diode smd transistor w17 pDS4102-DL diode C238 88E111 FTD2232

    SIEMENS thyristor

    Abstract: transistor smd AFE smd transistor G9
    Text: SIEMENS 1 Technical Information Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.


    OCR Scan     		PDF

    smd transistor A11b

    Abstract: smd diode code 1B2 transistor book transistor ic equivalent book
    Text: GaAs Components Infineon •aîfinülogies Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips.


    OCR Scan     		PDF

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn