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    Y PARAMETERS OF RF BJT Search Results

    Y PARAMETERS OF RF BJT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    1812WBT1.5-2LC Coilcraft Inc RF Transformer, 2.75MHz Min, 135MHz Max, 1.5:1, ROHS COMPLIANT Visit Coilcraft Inc Buy

    Y PARAMETERS OF RF BJT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EEsof Circuit Components for Manual for ADS

    Abstract: No abstract text available
    Text: Agilent GENESYS Affordable • Accurate • Easy-to-Use An integrated simulation and synthesis design tool for RF/microwave circuit board and subsystem designers Agilent Genesys is an affordable, accurate, easy-to-use RF and microwave simulation tool created for the circuit


    Original     		PDF

    XH035

    Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
    Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target


    Original     		PDF XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3

    RFMD RF1201

    Abstract: Bluetooth Jammer RF1201 jammer gsm gsm jammer Y parameters of rf bjt RFmd SPDT
    Text: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm        Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage: 2.6V to 5.0V


    Original     		PDF RF1201 RF1201broadband -80dBc 40dBm IEEE802 11b/g 1900MHz DS101202 RFMD RF1201 Bluetooth Jammer RF1201 jammer gsm gsm jammer Y parameters of rf bjt RFmd SPDT

    DRM005

    Abstract: FLASHPROG ESSEPIE 433 mhz UHF RECEIVER, pcb layout and Schematic Di "Remote Keyless Entry" protocol MC33491 Remote Keyless Entry 16 pin single chip 24GHz UHF transistor CRC232 MC908RF2 HC08
    Text: Remote Keyless Entry RKE Reference Design Using the MC68HC908RF2 Designer Reference Manual M68HC08 Microcontrollers DRM005/D 5/2002 WWW.MOTOROLA.COM/SEMICONDUCTORS Remote Keyless Entry (RKE) Reference Design Using the MC68HC908RF2 By: Andrea Martini ESSEPIE S.r.l. — Studio di progettazione


    Original     		PDF MC68HC908RF2 M68HC08 DRM005/D DRM005 DRM005 FLASHPROG ESSEPIE 433 mhz UHF RECEIVER, pcb layout and Schematic Di "Remote Keyless Entry" protocol MC33491 Remote Keyless Entry 16 pin single chip 24GHz UHF transistor CRC232 MC908RF2 HC08

    CMOS spice model

    Abstract: MOS RM3 Spice model inductor BSIM3v3.2 XH035 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library
    Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target


    Original     		PDF XH035 XH035 35-micron CMOS spice model MOS RM3 Spice model inductor BSIM3v3.2 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library

    Y parameters of rf bjt

    Abstract: RF1200 RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2
    Text: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features       Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:


    Original     		PDF RF1200 RF1200broadband -80dBc 11b/g RF1200 1900MHz DS101202 Y parameters of rf bjt RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2

    FLASHPROG ESSEPIE

    Abstract: hc49smx lanex max232so MC33491 433 mhz UHF RECEIVER, pcb layout and Schematic Di 74HC139D 433MHz RS232 Schematics PC MOTHER BOARD SCHEMATICS 74HC125D
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Remote Keyless Entry RKE Reference Design Using the MC68HC908RF2 Designer Reference Manual M68HC08 Microcontrollers DRM005/D 5/2002 WWW.MOTOROLA.COM/SEMICONDUCTORS For More Information On This Product,


    Original     		PDF MC68HC908RF2 M68HC08 DRM005/D FLASHPROG ESSEPIE hc49smx lanex max232so MC33491 433 mhz UHF RECEIVER, pcb layout and Schematic Di 74HC139D 433MHz RS232 Schematics PC MOTHER BOARD SCHEMATICS 74HC125D

    DSX221

    Abstract: 3500GIG3 14584 CMOS Bluetooth IC headset
    Text: SiW3500 Bluetooth SoC PLL Control • Uses standard 0.18-micron CMOS manufacturing process technology. Voltage Regulators and Power Distribution Clock Distribution CS, OE and WE Optional flash interface LNA ADC • Supports standard and 3-wire HCI transport layer modes with an


    Original     		PDF SiW3500 18-micron R00Krf DSX221 3500GIG3 14584 CMOS Bluetooth IC headset

    mos rm3 data

    Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 mos rm3 data MOS RM3 BSIM3V3 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials

    Characteristics of GaAs Spike Doped Collectors

    Abstract: kopin
    Text: > For Submission to BCTM 2012 < 1 Characteristics of GaAs Spike Doped Collectors P. J. Zampardi, K. Kwok, C. Cismaru, M. Sun, and A. Lo Abstract—Spike-doped collector designs have recently been studied in both Si BJT and GaAs HBTs as a way to improve the


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    MOS RM3

    Abstract: No abstract text available
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		PDF XO035 XO035 35-micron MOS RM3

    DSX221S

    Abstract: SiW3500 bluetooth Coexistence 3-wire OEN 46 1458 CLK32 l8838 bluetooth transmitter receiver parallel chip mobile
    Text: SiW3500 Preliminary • Bluetooth specification V1.2 qualified including mandatory and optional functions such as AFH and eSCO. PLL Control ADDRESS BUS VDD_P VBB_OUT VCC_OUT VBATT_DIG VBATT_ANA XTAL_N CLK_REQ_IN XTAL_P/CLK CLK_REQ_OUT VTUNE • RF System on Chip SoC for


    Original     		PDF SiW3500 18-micron R00Irf DSX221S bluetooth Coexistence 3-wire OEN 46 1458 CLK32 l8838 bluetooth transmitter receiver parallel chip mobile

    trace code marking RFMD

    Abstract: No abstract text available
    Text: SiW3500 Preliminary ULTIMATEBLUE Bluetooth SoC PLL Control • Uses standard 0.18-micron CMOS manufacturing process technology. Voltage Regulators and Power Distribution Clock Distribution CS, OE and WE Optional flash interface LNA ADC • Supports standard and 3-wire HCI


    Original     		PDF SiW3500 18-micron R00JIrf trace code marking RFMD

    HEMT GaN 8 GHz bare die

    Abstract: 14584 CMOS 0MFP1 trace code marking RFMD 3500GIG3 145845
    Text: SiW3500 Bluetooth SoC PLL Control • Uses standard 0.18-micron CMOS manufacturing process technology. Voltage Regulators and Power Distribution Clock Distribution CS, OE and WE Optional flash interface LNA ADC • Supports standard and 3-wire HCI transport layer modes with an


    Original     		PDF SiW3500 18-micron R00Lrf HEMT GaN 8 GHz bare die 14584 CMOS 0MFP1 trace code marking RFMD 3500GIG3 145845

    LOT CODE NE NEC

    Abstract: nec 08e 2SC5434 NE680 NE680M03 S21E nec manufacture year bf179
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


    Original     		PDF NE680M03 NE680M03 LOT CODE NE NEC nec 08e 2SC5434 NE680 S21E nec manufacture year bf179

    74xx76

    Abstract: TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32
    Text: Electronics Workbench TM Multisim 8 Simulation and Capture TM Component Reference Guide TitleShort-Hidden cross reference text May 2005 371587A-01 Support Worldwide Technical Support and Product Information ni.com National Instruments Corporate Headquarters


    Original     		PDF 71587A-01 74xx76 TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32

    MOS RM3

    Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		PDF XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"

    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3

    T105 25E3

    Abstract: GAL 16 v 8 D DIP 2SK 1110 5011F analog device 260a OP260G
    Text: ANALOGDEVICES fAX-ON-DEMAND HOTLINE - Page 38 -. ANALOG W DEVICES - m m Dual,High-Speed, CurrentFeedback Operational Amplifier OP-260 - PIN CONNECTIONS FEATURES Very High Slew Rate . .3dB Bandwidth Av=+10 . 550V/IlSTyp 40MHz Typ . BandwidthIndependentof Gain


    Original     		PDF OP-260 50V/IlSTyp 40MHz OP260ARCI883 OP260AJ' OP260EJ OP260FJ OP26OGP OP260GS1t MIL-STD-883, T105 25E3 GAL 16 v 8 D DIP 2SK 1110 5011F analog device 260a OP260G

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    Untitled

    Abstract: No abstract text available
    Text: RF610ÓTÌ MICRO-DEVICES 3 V 9 0 0 MHZ LINEAR POWER AMPLIFIER MODULE • 3V CDMA/AMPS Cellular Handset POWER AMPLIFIERS T y p ic a l A p p lic a tio n s Spread-Spectrum System • 3V CDMA20001/X Cellular Handset P ro d u c t D e s crip tio n The RF6100-1 is a high-power, high-efficiency linear


    OCR Scan     		PDF CDMA20001/X RF610 RF6100-1 IS-95/CDMA 824MHz 849MHz RF6100-1

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    RF Transistor s-parameter

    Abstract: bipolar transistor s-parameter lm 7803 s-parameter RF POWER TRANSISTOR NPN BJT with i-v characteristics transistor D 5032 bipolar transistor ghz s-parameter 60Ghz TRANSISTOR 30GHZ qubic4
    Text: IEEE BCTM 10.2 An S-parameter Technique for Substrate Resistance Characterization of RF Bipolar Transistors S.D. Harker*, R.J. Havenst , J.C.J. Paasschenst , D. Szmyd*, L.F. Tiemeijer*, and E.F. Weagel* ‘ Philips Semiconductors, 9201 Pan American Frwy. NE, Albuquerque, NM 87113, USA


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: RF6100-4 I MICRO-DEVICES 3 V 1 9 0 0 M HZ LINEAR POWER AM PLIFIER MODULE • 3V CDMA US-PCS Handset 3V CDMA2000/1X-EV-DO US-PCS • 3V CDMA2000/1XRTT US-PCS Handset Handset POWER AMPLIFIERS T y p ic a l A p p lic a tio n s Spread-Spectrum System P ro d u c t D e s c rip tio n


    OCR Scan     		PDF RF6100-4 CDMA2000/1XRTT CDMA2000/1X-EV-DO IS-95/CDMA 1850MHz 1910MHz de2-98 RF6100-4