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    Y PARAMETER OF MOSFET Search Results

    Y PARAMETER OF MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    Y PARAMETER OF MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6R190C6

    Abstract: smd TRANSISTOR code marking PR smd transistor marking da IPP60R190C6 EL series SMD transistor TRANSISTOR marking ar code 6r190 smd transistor marking 1 da
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 1.0, 2009-06-19 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


    Original     		PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190C6 smd TRANSISTOR code marking PR smd transistor marking da EL series SMD transistor TRANSISTOR marking ar code 6r190 smd transistor marking 1 da

    6R199P

    Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description


    Original     		PDF IPL60R199CP 150mm² 6R199P mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199

    6r385P

    Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description


    Original     		PDF IPL60R385CP 150mm² 6r385P IPL60R385CP JESD22 EL series small size SMD transistor infineon msl

    EL series SMD transistor

    Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description


    Original     		PDF IPL60R299CP 150mm² EL series SMD transistor 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299

    80N75

    Abstract: No abstract text available
    Text: STL80N75F6 N-channel 75 V, 4.5 mΩ typ., 18 A STripFET DeepGATE™ VI Power MOSFET in PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS RDS on max ID STL80N75F6 75 V 5.5 mΩ 18 A • Low gate charge 1 2 • Very low on-resistance


    Original     		PDF STL80N75F6 DocID018785 80N75

    Untitled

    Abstract: No abstract text available
    Text: STFI5N95K3 N-channel 950 V, 3 Ω typ., 4 A Zener-protected SuperMESH3 Power MOSFET in I2PAKFP package Datasheet − production data Features 1 2 Order code VDS RDS on max ID PTOT STFI5N95K3 950 V 3.5 Ω 4A 25 W • Fully insulated and low profile package with


    Original     		PDF STFI5N95K3 O-281) AM01476v1 DocID023624

    TRANSISTOR bHrt

    Abstract: transistor 9a2a ga8c STT3PF20V bhrt transistor a6 s STT3PF20
    Text: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS !ÃW RDS on 1Ã!ÃWÃ5#$W 1Ã!$ÃWÃ5!&W ID !!Ã6 TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE


    Original     		PDF STT3PF20V OT23-6L TRANSISTOR bHrt transistor 9a2a ga8c STT3PF20V bhrt transistor a6 s STT3PF20

    Untitled

    Abstract: No abstract text available
    Text: STY130NF20D N-channel 200 V, 0.01 Ω typ., 130 A STripFET II with fast recovery diode Power MOSFET in a Max247 package Datasheet - production data Features Order code VDS RDS on max. STY130NF20D 200 V 0.012 Ω ID PTOT 130 A 450 W • Exceptional dv/dt capability


    Original     		PDF STY130NF20D Max247 Max247 DocID15300

    7N80K5

    Abstract: V/7N80K5
    Text: STL7N80K5 N-channel 800 V, 0.95 Ω typ., 3.6 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID STL7N80K5 800 V 1.2 Ω 3.6 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)


    Original     		PDF STL7N80K5 DocID025551 7N80K5 V/7N80K5

    Untitled

    Abstract: No abstract text available
    Text: STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 Ω typ., MESH OVERLAY Power MOSFET in a DPAK package Datasheet - production data Features TAB Order code VDS RDS on max. ID STD10NF30 300 V 0.33 Ω 10 A • Designed for automotive applications and


    Original     		PDF STD10NF30 AEC-Q101 DocID026136

    BN384M2.5X6

    Abstract: No abstract text available
    Text: STL70N4LLF5 N-channel 40 V, 6.1 mΩ typ., 18 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS RDS on ID STL70N4LLF5 40 V 6.7 mΩ 18 A • RDS(on) * Qg industry benchmark 1 2 3 • Extremely low on-resistance RDS(on)


    Original     		PDF STL70N4LLF5 DocID15229 BN384M2.5X6

    Untitled

    Abstract: No abstract text available
    Text: STL70N4LLF5 Automotive-grade N-channel 40 V, 6.1 mΩ typ., 18 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 Order code VDS RDS on max ID STL70N4LLF5 40 V 6.7 mΩ 18 A • Designed for automotive applications and


    Original     		PDF STL70N4LLF5 AEC-Q101 DocID15229

    Untitled

    Abstract: No abstract text available
    Text: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω


    Original     		PDF STF1N105K3, STFW1N105K3, STP1N105K3 O-220FP, O-220 STF1N105K3 STFW1N105K3 O-220FP O-220

    STW19NM50N

    Abstract: No abstract text available
    Text: STF19NM50N, STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω typ., 14 A MDmesh II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes RDS on max ID 550 V 0.25 Ω 14 A STF19NM50N 3 1 VDS @ TJmax 3 2 1


    Original     		PDF STF19NM50N, STP19NM50N, STW19NM50N O-220FP, O-220 O-247 STF19NM50N O-220FP O-220 STP19NM50N STW19NM50N

    Untitled

    Abstract: No abstract text available
    Text: STL90N3LLH6 N-channel 30 V, 0.0038 Ω typ., 24 A STripFET VI DeepGATE™ Power MOSFET in PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 Order code VDS RDS on max. ID STL90N3LLH6 30 V 0.0045 Ω 24 A (1) 1. The value is rated according Rthj-pcb


    Original     		PDF STL90N3LLH6 DocID15573

    fs8205A

    Abstract: FS8205A-DS-12 fs8205
    Text: FS8205A-DS-12_EN Datasheet AUG 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.2 FS8205A Fo Dual N-Channel Enhancement Mode Power MOSFET FS8205A Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司


    Original     		PDF FS8205A-DS-12 FS8205A 25Deg 125Deg Rds25 25mohm 32mohm Rds45 fs8205A fs8205

    IRFR48Z

    Abstract: IRFU48Z U120
    Text: PD - 95950 AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description IRFR48ZPbF IRFU48ZPbF HEXFET Power MOSFET D VDSS = 55V


    Original     		PDF IRFR48ZPbF IRFU48ZPbF IRFR/U48ZPbF O-251AA) IRFR48Z IRFU48Z U120

    K204 transistor

    Abstract: k2045 transistor smd XH UA356
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK200-50Y DESCRIPTION BUK204-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount


    OCR Scan     		PDF BUK200-50Y BUK204-50Y K204 transistor k2045 transistor smd XH UA356

    irf840 mosfet drive circuit diagram

    Abstract: Application of irf840 TPS2812 power supply IRF840 APPLICATION SCHEMATIC POWER SUPPLY irf840 irf840 power supply TPS2811 TPS2812D TPS2813 TPS2814
    Text: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS S LVS132C - N O VE M B E R 1995 - R EVISED JA N U A R Y 1997 • Industry-Standard Driver Replacement • 25-ns Max Rise/Fall Times and 40-ns Max Propagation Delay - 1-nF Load, V c c = 14 V


    OCR Scan     		PDF TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 SLVS132C TPS2813 25-ns irf840 mosfet drive circuit diagram Application of irf840 TPS2812 power supply IRF840 APPLICATION SCHEMATIC POWER SUPPLY irf840 irf840 power supply TPS2811 TPS2812D TPS2813 TPS2814

    PowerMOS transistor TOPFET high side switch

    Abstract: BUK203-50Y
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK203-50Y BUK203-50Y OT263 T0220 PowerMOS transistor TOPFET high side switch

    diode sg 5 ts

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK203-50Y DESCRIPTION BUK207-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount


    OCR Scan     		PDF BUK203-50Y BUK207-50Y diode sg 5 ts

    PowerMOS transistor TOPFET high side switch

    Abstract: 100-P BUK200-50Y C6560
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK200-50Y OT263 T0220 PowerMOS transistor TOPFET high side switch 100-P BUK200-50Y C6560

    5g smd transistor

    Abstract: transistor 5d smd smd transistor 3U
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK203-50Y DESCRIPTION BUK207-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount


    OCR Scan     		PDF BUK203-50Y BUK207-50Y BUK207-50Y 5g smd transistor transistor 5d smd smd transistor 3U

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6898~| P-Channel Silicon MOSFET 2SJ569LS Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. unit : mm 2078B Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    OCR Scan     		PDF ENN6898~ 2SJ569LS 2078B