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    Y 431 TRANSISTOR Search Results

    Y 431 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    Y 431 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    h a 431 transistor

    Abstract: transistor 431t transistor w 431 431T 431T1 a/TRANSISTOR+431t
    Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity


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    431DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, h a 431 transistor transistor 431t transistor w 431 431T 431T1 a/TRANSISTOR+431t PDF

    transistor 431t

    Abstract: h a 431 transistor 431T transistor w 431 J412 lm 431 DAtasheet a 431 transistor TRANSISTOR 431 431D 431 transistor
    Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity


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    431DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, transistor 431t h a 431 transistor 431T transistor w 431 J412 lm 431 DAtasheet a 431 transistor TRANSISTOR 431 431D 431 transistor PDF

    6MBP50RTA060

    Abstract: 6mbp160rta060 6MBP80RTA060 fuji ipm 6MBP100RTA060 7MBP50RTA060 6mbp20RTA060 7MBP160RTA060 fuji 6mbp 7MBP80RTA060
    Text: R-IPM3 and Econo IPM Series of Intelligent Power Modules Manabu Watanabe Yoshiyuki Kusunoki Naotaka Matsuda 1. Introduction Fuji Electric has developed and mass-produced several series of IGBT-IPMs insulated gate bipolar transistor-intelligent power modules , beginning with


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    CIPS2002, 6MBP50RTA060 6mbp160rta060 6MBP80RTA060 fuji ipm 6MBP100RTA060 7MBP50RTA060 6mbp20RTA060 7MBP160RTA060 fuji 6mbp 7MBP80RTA060 PDF

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


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    MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA PDF

    transistor 431 c

    Abstract: 431 transistor transistor 431 a 431 transistor transistor 431t transistor 431 N transistor N 431 a n 431 transistor 431t transistor 431 a
    Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity


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    431DD 431/1203/Q1 ROP/1203/Q1 transistor 431 c 431 transistor transistor 431 a 431 transistor transistor 431t transistor 431 N transistor N 431 a n 431 transistor 431t transistor 431 a PDF

    h a 431 transistor

    Abstract: LH 431 IC 431 1N3913 431 transistors
    Text: CÂ \X y . Series PTC 430, PTC 431 , V- /? % - High Voltage NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators


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    2N6431

    Abstract: 2N6432 2N6433 2N6430
    Text: Datasheet Central 2N6430 2N6432 2 N 6 431 2N6433 NPN PN P Semiconductor Corp. C O M P L E M E N T A R Y SILICON T R A N S IS T O R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JE D E C T O -1 8 C A S E Manufacturers of W orld C la ss Discrete Sem iconductors


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    2N6430 2N6431 2N6432 2N6433 2N6431 2N6430, PDF

    transistor w 431

    Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
    Text: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW


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    transistor w 431

    Abstract: a 431 transistor transistor 431 c n 431 transistor a 103 m Transistor y 431 transistor transistor 431 N transistor 431 Transistor Arrays transistor 431 a
    Text: CONTENTS [1 ] INDEX . 7 IFD FAM ILY TREE . TD/TB62 SERIES . TRANSISTOR ARRAY SELECTION GUIDE .


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    TD/TB62 transistor w 431 a 431 transistor transistor 431 c n 431 transistor a 103 m Transistor y 431 transistor transistor 431 N transistor 431 Transistor Arrays transistor 431 a PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5126 ._ 2SC5238 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatures • High speed tf = 100ns typ . • High breakdown voltage (Vcbo = 1500V).


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    EN5126 2SC5238 100ns 90195YK TA-0415 D0S0412 PDF

    BF451

    Abstract: BF450 transistor BF451 Bp451
    Text: N AMER PHILIPS/DISCRETE b'ÏE D 1^53^31 □G E 7 b tì4 STS J BF450 BF451 HF SILICON PLANAR EPITAXIALTRANSISTORS PNP transistors in a plastic envelope intended fo r HF and IF applications in radio receivers, especially fo r m ixer stages in AM receivers and IF stages in AM /FM receivers w ith negative earth.


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    BF450 BF451 BF450" BF450 Bp451 BF451 transistor BF451 PDF

    IRF 3302

    Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
    Text: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited


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    IRFF430, IRFF431, IRFF432, IRFF433 92CS-3374I IRFF432 IRFF433 IRF 3302 2sc 1894 IRFF430 IRFF431 irf 430 PDF

    2SC2673

    Abstract: 2SC4040 2sa881
    Text: / I ransistors Is "7 2SC 2673 2S C 4040 2SC2673/2SC4040 Power Amp. Epitaxial Planar NPN Silicon Transistors • W Fi \fi± |H /D im en sio n s Unit : mm 1) Pc =600m W 2) VCE(sat)=150m V Typ (at Ic / I b = 500mA/50mA) ¿r iS l'o 3) 2SA881 /2SA15601 =l > Z f') „


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    2SC2673/2SC4040 500mA/50mA) 2SA881 /2SA1560 600mW. 2SA881, 2SA1560. 500mA/50mA --50mA 2SC2673 2SC4040 PDF

    2SC2673

    Abstract: 2sa881 HM431
    Text: ROHM CO LTD 40E D 7ÖSäcn ci QGÜS7ST 7 BRHil //Transistors 2SC2673/2SC4040 T - 2 7 - iÇ - — 2 S C 2 3 7 3 2 S v 4 v 4 0 v '^ > h 7 > y 7 ^ 4 ,tt^JiH lIiffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistors 1ftffivfi& Ej/Pim ensions Unit : mm


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    2SC2673/2SC4040 500mA/50mA) 2SA881 /2SA1560 600mW. 150mV 2SA881, 2SA1560. 40IPATION 2SC2673 HM431 PDF

    ha 431 transistor

    Abstract: PZTA44 PZTA45
    Text: q. „ , „ . • Philips Semiconductors bbSB'lBl 00EL017 bbT H A P X N AMER PHILIPS/DISCRETE NPN high voltage transistor FEATURES Product apBrtflratlnr. b7E D — — PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION High voltage NPN transistor in a


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    00EL017 PZTA44; PZTA45 OT223 OT223 PZTA44 PZTA45= PZTA44 ha 431 transistor PZTA45 PDF

    BUV78

    Abstract: BUV79 be35v 62901-B
    Text: BUY 77, BUY 78, BUY 79 NPN Silicon power transistors P re lim in a ry d a ta BUY 77, BUY 78 and BUY 79 are triple-diffused NPN silicon power transistors in a case 3 A 2 DIN 4 1 8 7 2 T O -3 . The collector is electrically connected to the case. The transistors are particularly designed for use as high-speed power switches at


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    Q62702-U Q62702-U153 Q62901-B11 62901-B BUV78 BUV79 be35v PDF

    transistor buv 90

    Abstract: BUV18
    Text: rz7 Ä 7# SCS-THOMSON BUV18 BUV19 NPN HIGH CURRENT SWITCHING TRANSISTORS • HIGH EFFICIENCY SW ITCHING ■ VERY LOW SATURATION VOLTAGE AT 40A ■ FAST TURN-OFF AND TURN-ON T O -3 D E S C R IP T IO N High current, high speed transistors suited for low voltage applications : high efficiency converters,


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    BUV18 BUV19 transistor buv 90 PDF

    Low Noise Zener Diode

    Abstract: 1N5527 zener 431 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524
    Text: 2848352 AM DIODE BE | 2 0 4 3 3 5 5 TRANSISTOR CO DOGGl t M 84D INC 00 164 D T *• û I M f LOW VOLTAGE AVALANCHE ZENER DIODES These low voltage avalanche zener diodes are specifically designed for low current, low noise applica­ tions. The very sharp knees, low leakages, and low impedances at low currents make them ideal for voltage


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    4fl355 1N5518 250uA 1N6082-43 1N6083 1N6084-51 IN6085 1N6086 1N6087 N6088 Low Noise Zener Diode 1N5527 zener 431 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA " I . \ W Green " . I. TM L i n e MGSF1P02LT1 Motorola Preferred Device Low rDS on) Sm all-Signal RMOSFETs TMOS Single P-Channel Field Effect Transistors


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    MGSF1P02LT1 PDF

    sd 431 transistor

    Abstract: SD1422 transistor c5 178 x1 transistor voltronics jr M111 VK200 UNELCO 2 SD 427 transistor
    Text: H /tw If /lt f f S 140CommerceDrive 1 i t Montgomeryville, PA18936-1013 Tel: 215 631-9840 IVI II III I y Till a I a » I \ß W I I MM — _ SD1422 P ro g re s s P o w e re d b y T ec h no log y RF & MICROWAVE TRANSISTORS 450 - 512MHz CLASS C, MOBILE APPLICATIONS


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    512MHz 470MHz SD1422 SD1422 450-512MHz VK200 21/4-B /18AWG 750pF 25VDC sd 431 transistor transistor c5 178 x1 transistor voltronics jr M111 UNELCO 2 SD 427 transistor PDF

    transistor sl 431

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC4245 U n it in m m TV TUNER, UHF M IXER A PPLICATIO NS. V H F -U H F BAND RF AM PLIFIER APPLICATIO NS. M AXIM UM RATINGS Ta = 25°C CHARA CTERISTIC SYMBOL RATING U N IT VCBO VCEO Ve b o ic Ib I’C 30 15 3


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    2SC4245 SC-70 800MHz transistor sl 431 PDF

    LM431ACM3

    Abstract: LM431AIM3 LM431BCM3 LM431BIM3 zener diode h49 LM43 431bc ic LM 356 LIA SOT23-3 lm 43
    Text: & Semiconductor LM 431 A d ju s ta b le Precision Z e n e r S h u n t R e g u la to r Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range ot operation. The output voltage may be set at any


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    LM431 LM431ACM3 LM431AIM3 LM431BCM3 LM431BIM3 zener diode h49 LM43 431bc ic LM 356 LIA SOT23-3 lm 43 PDF

    HIGH POWER DIODE

    Abstract: "Power Diode" 500V 20A 132 1506 diode D66DWT273 D66EW1 EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor
    Text: HIGH VOLTAGE D 66D W T2T3 D66EW1,2,3 NPN POWER DARLINGTON VcER = 600-700 VOLTS VcEV = 800-900 VOLTS 50 AMP, 167 WATTS TRANSISTORS The D66DW/EW is a high voltage NPN high current power Darlington especially designed for applications requiring high blocking voltage capability such as: 460VAC line motor


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    D66DWT273 D66EW1 D66DW/EW 460VAC D66DW -D66DW HIGH POWER DIODE "Power Diode" 500V 20A 132 1506 diode EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor PDF

    2sc3331 transistor

    Abstract: 2SA1318 2SC3331 PJ 431
    Text: Ordering number: EN 16 Q 0A N 0.I6O O A ¡I 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYOi AF Amp Applications Use Capable of being used in the low frequency to high frequency range. Features . Large current capacity and wide ASO. : 2SA1318


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    2SA1318/2SC3331 2SA1318 2034/2034A SC-43 7tlt17D7b 2sc3331 transistor 2SC3331 PJ 431 PDF