h a 431 transistor
Abstract: transistor 431t transistor w 431 431T 431T1 a/TRANSISTOR+431t
Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity
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431DD
ER116C
ER136C
RF180,
ER116C,
ER136C
RF100,
RF103,
ER114,
ER134,
h a 431 transistor
transistor 431t
transistor w 431
431T
431T1
a/TRANSISTOR+431t
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transistor 431t
Abstract: h a 431 transistor 431T transistor w 431 J412 lm 431 DAtasheet a 431 transistor TRANSISTOR 431 431D 431 transistor
Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity
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431DD
ER116C
ER136C
RF180,
ER116C,
ER136C
RF100,
RF103,
ER114,
ER134,
transistor 431t
h a 431 transistor
431T
transistor w 431
J412
lm 431 DAtasheet
a 431 transistor
TRANSISTOR 431
431D
431 transistor
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6MBP50RTA060
Abstract: 6mbp160rta060 6MBP80RTA060 fuji ipm 6MBP100RTA060 7MBP50RTA060 6mbp20RTA060 7MBP160RTA060 fuji 6mbp 7MBP80RTA060
Text: R-IPM3 and Econo IPM Series of Intelligent Power Modules Manabu Watanabe Yoshiyuki Kusunoki Naotaka Matsuda 1. Introduction Fuji Electric has developed and mass-produced several series of IGBT-IPMs insulated gate bipolar transistor-intelligent power modules , beginning with
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CIPS2002,
6MBP50RTA060
6mbp160rta060
6MBP80RTA060
fuji ipm
6MBP100RTA060
7MBP50RTA060
6mbp20RTA060
7MBP160RTA060
fuji 6mbp
7MBP80RTA060
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5962L0053605VYC
Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A
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MIL-HDBK-103AJ
MIL-HDBK-103AH
MIL-HDBK-103AJ
5962L0053605VYC
5962-9069204QXA
ATMEL 302 24C16
UT9Q512E-20YCC
MOH0268D
UT54ACS164245SEIUCCR
Z085810
5962-9762101Q2A
UT28F256QLET-45UCC
5962R0250401KXA
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transistor 431 c
Abstract: 431 transistor transistor 431 a 431 transistor transistor 431t transistor 431 N transistor N 431 a n 431 transistor 431t transistor 431 a
Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity
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431DD
431/1203/Q1
ROP/1203/Q1
transistor 431 c
431 transistor
transistor 431
a 431 transistor
transistor 431t
transistor 431 N
transistor N 431 a
n 431 transistor
431t
transistor 431 a
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h a 431 transistor
Abstract: LH 431 IC 431 1N3913 431 transistors
Text: CÂ \X y . Series PTC 430, PTC 431 , V- /? % - High Voltage NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators
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2N6431
Abstract: 2N6432 2N6433 2N6430
Text: Datasheet Central 2N6430 2N6432 2 N 6 431 2N6433 NPN PN P Semiconductor Corp. C O M P L E M E N T A R Y SILICON T R A N S IS T O R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JE D E C T O -1 8 C A S E Manufacturers of W orld C la ss Discrete Sem iconductors
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2N6430
2N6431
2N6432
2N6433
2N6431
2N6430,
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transistor w 431
Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Text: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW
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transistor w 431
Abstract: a 431 transistor transistor 431 c n 431 transistor a 103 m Transistor y 431 transistor transistor 431 N transistor 431 Transistor Arrays transistor 431 a
Text: CONTENTS [1 ] INDEX . 7 IFD FAM ILY TREE . TD/TB62 SERIES . TRANSISTOR ARRAY SELECTION GUIDE .
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TD/TB62
transistor w 431
a 431 transistor
transistor 431 c
n 431 transistor
a 103 m Transistor
y 431 transistor
transistor 431 N
transistor 431
Transistor Arrays
transistor 431 a
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5126 ._ 2SC5238 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatures • High speed tf = 100ns typ . • High breakdown voltage (Vcbo = 1500V).
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EN5126
2SC5238
100ns
90195YK
TA-0415
D0S0412
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BF451
Abstract: BF450 transistor BF451 Bp451
Text: N AMER PHILIPS/DISCRETE b'ÏE D 1^53^31 □G E 7 b tì4 STS J BF450 BF451 HF SILICON PLANAR EPITAXIALTRANSISTORS PNP transistors in a plastic envelope intended fo r HF and IF applications in radio receivers, especially fo r m ixer stages in AM receivers and IF stages in AM /FM receivers w ith negative earth.
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BF450
BF451
BF450"
BF450
Bp451
BF451
transistor BF451
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IRF 3302
Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
Text: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited
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IRFF430,
IRFF431,
IRFF432,
IRFF433
92CS-3374I
IRFF432
IRFF433
IRF 3302
2sc 1894
IRFF430
IRFF431
irf 430
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2SC2673
Abstract: 2SC4040 2sa881
Text: / I ransistors Is "7 2SC 2673 2S C 4040 2SC2673/2SC4040 Power Amp. Epitaxial Planar NPN Silicon Transistors • W Fi \fi± |H /D im en sio n s Unit : mm 1) Pc =600m W 2) VCE(sat)=150m V Typ (at Ic / I b = 500mA/50mA) ¿r iS l'o 3) 2SA881 /2SA15601 =l > Z f') „
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2SC2673/2SC4040
500mA/50mA)
2SA881
/2SA1560
600mW.
2SA881,
2SA1560.
500mA/50mA
--50mA
2SC2673
2SC4040
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2SC2673
Abstract: 2sa881 HM431
Text: ROHM CO LTD 40E D 7ÖSäcn ci QGÜS7ST 7 BRHil //Transistors 2SC2673/2SC4040 T - 2 7 - iÇ - — 2 S C 2 3 7 3 2 S v 4 v 4 0 v '^ > h 7 > y 7 ^ 4 ,tt^JiH lIiffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistors 1ftffivfi& Ej/Pim ensions Unit : mm
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2SC2673/2SC4040
500mA/50mA)
2SA881
/2SA1560
600mW.
150mV
2SA881,
2SA1560.
40IPATION
2SC2673
HM431
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ha 431 transistor
Abstract: PZTA44 PZTA45
Text: q. „ , „ . • Philips Semiconductors bbSB'lBl 00EL017 bbT H A P X N AMER PHILIPS/DISCRETE NPN high voltage transistor FEATURES Product apBrtflratlnr. b7E D — — PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION High voltage NPN transistor in a
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00EL017
PZTA44;
PZTA45
OT223
OT223
PZTA44
PZTA45=
PZTA44
ha 431 transistor
PZTA45
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BUV78
Abstract: BUV79 be35v 62901-B
Text: BUY 77, BUY 78, BUY 79 NPN Silicon power transistors P re lim in a ry d a ta BUY 77, BUY 78 and BUY 79 are triple-diffused NPN silicon power transistors in a case 3 A 2 DIN 4 1 8 7 2 T O -3 . The collector is electrically connected to the case. The transistors are particularly designed for use as high-speed power switches at
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Q62702-U
Q62702-U153
Q62901-B11
62901-B
BUV78
BUV79
be35v
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transistor buv 90
Abstract: BUV18
Text: rz7 Ä 7# SCS-THOMSON BUV18 BUV19 NPN HIGH CURRENT SWITCHING TRANSISTORS • HIGH EFFICIENCY SW ITCHING ■ VERY LOW SATURATION VOLTAGE AT 40A ■ FAST TURN-OFF AND TURN-ON T O -3 D E S C R IP T IO N High current, high speed transistors suited for low voltage applications : high efficiency converters,
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BUV18
BUV19
transistor buv 90
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Low Noise Zener Diode
Abstract: 1N5527 zener 431 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524
Text: 2848352 AM DIODE BE | 2 0 4 3 3 5 5 TRANSISTOR CO DOGGl t M 84D INC 00 164 D T *• û I M f LOW VOLTAGE AVALANCHE ZENER DIODES These low voltage avalanche zener diodes are specifically designed for low current, low noise applica tions. The very sharp knees, low leakages, and low impedances at low currents make them ideal for voltage
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4fl355
1N5518
250uA
1N6082-43
1N6083
1N6084-51
IN6085
1N6086
1N6087
N6088
Low Noise Zener Diode
1N5527
zener 431
1N5518
1N5519
1N5520
1N5521
1N5522
1N5523
1N5524
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA " I . \ W Green " . I. TM L i n e MGSF1P02LT1 Motorola Preferred Device Low rDS on) Sm all-Signal RMOSFETs TMOS Single P-Channel Field Effect Transistors
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MGSF1P02LT1
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sd 431 transistor
Abstract: SD1422 transistor c5 178 x1 transistor voltronics jr M111 VK200 UNELCO 2 SD 427 transistor
Text: H /tw If /lt f f S 140CommerceDrive 1 i t Montgomeryville, PA18936-1013 Tel: 215 631-9840 IVI II III I y Till a I a » I \ß W I I MM — _ SD1422 P ro g re s s P o w e re d b y T ec h no log y RF & MICROWAVE TRANSISTORS 450 - 512MHz CLASS C, MOBILE APPLICATIONS
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512MHz
470MHz
SD1422
SD1422
450-512MHz
VK200
21/4-B
/18AWG
750pF
25VDC
sd 431 transistor
transistor c5 178
x1 transistor
voltronics jr
M111
UNELCO
2 SD 427 transistor
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transistor sl 431
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC4245 U n it in m m TV TUNER, UHF M IXER A PPLICATIO NS. V H F -U H F BAND RF AM PLIFIER APPLICATIO NS. M AXIM UM RATINGS Ta = 25°C CHARA CTERISTIC SYMBOL RATING U N IT VCBO VCEO Ve b o ic Ib I’C 30 15 3
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2SC4245
SC-70
800MHz
transistor sl 431
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LM431ACM3
Abstract: LM431AIM3 LM431BCM3 LM431BIM3 zener diode h49 LM43 431bc ic LM 356 LIA SOT23-3 lm 43
Text: & Semiconductor LM 431 A d ju s ta b le Precision Z e n e r S h u n t R e g u la to r Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range ot operation. The output voltage may be set at any
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LM431
LM431ACM3
LM431AIM3
LM431BCM3
LM431BIM3
zener diode h49
LM43
431bc
ic LM 356
LIA SOT23-3
lm 43
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HIGH POWER DIODE
Abstract: "Power Diode" 500V 20A 132 1506 diode D66DWT273 D66EW1 EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor
Text: HIGH VOLTAGE D 66D W T2T3 D66EW1,2,3 NPN POWER DARLINGTON VcER = 600-700 VOLTS VcEV = 800-900 VOLTS 50 AMP, 167 WATTS TRANSISTORS The D66DW/EW is a high voltage NPN high current power Darlington especially designed for applications requiring high blocking voltage capability such as: 460VAC line motor
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D66DWT273
D66EW1
D66DW/EW
460VAC
D66DW
-D66DW
HIGH POWER DIODE
"Power Diode" 500V 20A
132 1506 diode
EW NPN
D66DW3
NPN POWER DARLINGTON TRANSISTORS
EW1 transistor
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2sc3331 transistor
Abstract: 2SA1318 2SC3331 PJ 431
Text: Ordering number: EN 16 Q 0A N 0.I6O O A ¡I 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYOi AF Amp Applications Use Capable of being used in the low frequency to high frequency range. Features . Large current capacity and wide ASO. : 2SA1318
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2SA1318/2SC3331
2SA1318
2034/2034A
SC-43
7tlt17D7b
2sc3331 transistor
2SC3331
PJ 431
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