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    Marathon Special Products MS600-XP-15-07A

    Marking Strips - 600 (800) Series - Double Row - XP (General Purpose Laminate) - 15 Terminals.
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    XP1507 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    XP1507 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    XP1507 Panasonic Composite Transistors Original PDF

    XP1507 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2631

    Abstract: XP01507 XP1507
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planar type Unit: mm (0.425) For high breakdown voltage and low-noise amplification 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors)


    Original     		PDF XP01507 XP1507) 2SC2631 XP01507 XP1507

    SC-88A npn

    Abstract: 2SD814 XP1507 4600ic
    Text: Composite Transistors XP1507 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 High breakdown voltage and for low noise amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD814 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP1507 2SD814 SC-88A npn 2SD814 XP1507 4600ic

    2SD0814

    Abstract: 2SD814 XP01507 XP1507
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planer transistor ● 5 4 Features 0.2±0.1 Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 5° ● 0.20±0.05


    Original     		PDF XP01507 XP1507) 2SD0814 2SD814) 2SD814 XP01507 XP1507

    2SC2631

    Abstract: XP01507 XP1507
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planar type Unit: mm (0.425) For high breakdown voltage and low-noise amplification 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05 –0.02 1 5˚ ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF XP01507 XP1507) 2SC2631 XP01507 XP1507

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planar type Unit: mm (0.425) For high breakdown voltage and low-noise amplification 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors)


    Original     		PDF XP01507 XP1507)

    2SD0814

    Abstract: 2SD814 XP01507 XP1507
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 High breakdown voltage and for low noise amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD0814(2SD814) x 2 elements 0 to 0.1 ● 0.7±0.1


    Original     		PDF XP01507 XP1507) 2SD0814 2SD814) 2SD814 XP01507 XP1507

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    XP1201

    Abstract: transistor d 2213 XP1212 XP1114
    Text: S Mini Type 5-pin Package Outline Transistors mn m - v • V- <X T ^ 7 h 5 > v * 2 4' ¿f CD1 ■ Û i 11ZM Æ U £ B m v ir - v T to ■ ft £ • ' J 7 P - g l i a f t it • 1m^mtc >>50%<»nmmno • 8 *x -1 ° > s a iftn s w iic w iS tfB ifiio •ffiiil£ 0 .2 iiim (fö * 0 .3 n > m )ll£ M U « A,/£ ^ 'J y vORSitlC


    OCR Scan     		PDF