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    K 1358 fet transistor

    Abstract: 28428 A 27631 transistor xmfp1-m3 XMFP3-M3 064110 9-8318 GaAS fet sot89 S0731 65851
    Text: このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。 GaAs No.O35.pdf 98.3.18 GaAs FET GaAs FIELD EFFECT TRANSISTOR Cat.No. O35 このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。


    Original     		PDF O35webPDF CGRM39 RMCR03 1000pF 4700pF K 1358 fet transistor 28428 A 27631 transistor xmfp1-m3 XMFP3-M3 064110 9-8318 GaAS fet sot89 S0731 65851

    XMFP1-M3

    Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
    Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••


    Original     		PDF Rating3-5698410 XMFP1-M3 D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428

    transistor application

    Abstract: transistor XMFP1-M3 power transistor 23 transistor marking transistor mesfet low noise transistor "Power transistor" mesfet low noise DECT 6.0
    Text: Microwave Components Microwave Components Field-Effect Transistor MESFET Low Noise Transistor 1.5 0.4 0.65 (2) (3) B 2.9 1.9 A (4) 0.8 0.3 (1) XMFS2-M1 Pin (1):Source (2):Gate (3):Source (4):Drain Marking A : Part No. B : Lot No. in mm Type Application Gain


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS POWER FET’S XMFP Series FEATURES • High power output ■ Excellent linear power gain APPLICATIONS ■ C-band power amps up to 6GHz ■ Wireless telecommunication base stations GSM, DCS, PCS, ISM, etc.


    Original     		PDF 10dBm) 20dBm) 30dBm 24dBm) 35dBm 100ms 0-35-E, CG01-I

    XMFP1-M3

    Abstract: No abstract text available
    Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS POWER FET’S XMFP Series FEATURES • High power output ■ Excellent linear power gain APPLICATIONS ■ C-band power amps up to 6GHz ■ Wireless telecommunication base stations GSM, DCS, PCS, ISM, etc.


    Original     		PDF 10dBm) 23dBm 15dBm) 20dBm) 24dBm) 35dBm 100ms 0-35-E, CG01-H XMFP1-M3

    DFY2R902

    Abstract: DFY2R902CR947BHG MuRata Gigafil XMFP1-M3 DFY21R88 DFY2R902CR947 DFC3r LFJ30-03 Ferrite Circulators at 15 ghz MQE9
    Text: This is the PDF file of catalog No.K09E-4. No.K09E4.pdf 99.8.31 Murata Products for Mobile Communications GSM DCS1800 PCN E-TACS DECT CT-2 PCS (IS136) AMPS/ADC PCS (GSM) CDMA800 PCS (CDMA) ISM900 PDC800 PDC1500 NTACS/CDMA PHS GSM CDMA E-TACS/AMPS PHS DECT


    Original     		PDF K09E-4. K09E4 DCS1800 IS136) CDMA800 ISM900 PDC800 PDC1500 DFY2R902 DFY2R902CR947BHG MuRata Gigafil XMFP1-M3 DFY21R88 DFY2R902CR947 DFC3r LFJ30-03 Ferrite Circulators at 15 ghz MQE9

    murata lot no

    Abstract: xmfp1-m3 XMFP2-M3 marking .A gaas fet marking B marking A
    Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS POWER FET’S XMFP Series FEATURES • High power output ■ Excellent linear power gain APPLICATIONS ■ C-band power amps up to 6GHz ■ Wireless telecommunication base stations GSM, DCS, PCS, ISM, etc.


    Original     		PDF 30dBm 26dBm 10dBm) 23dBm 15dBm) 20dBm) 24dBm) 100ms 0-35-E, CG01-J murata lot no xmfp1-m3 XMFP2-M3 marking .A gaas fet marking B marking A

    transistor XM

    Abstract: transistor power transistor k 30 transistor TRANSISTOR P 3 transistor mesfet transistor l 2 xmfp1-m3
    Text: Microwave Components Microwave Components Field-Effect Transistor MESFET Low Noise Transistor r •■ i m cd (3l (2 ) '~'B - (4) m -m l XMFS2-M1 Pm M arking (1) So urce 12V. G a te (3): Source (4) : Dram A : Part No. B . Lo i No. in mm Gain (dB) Minimum Noise Figure


    OCR Scan     		PDF

    AS15D

    Abstract: sot89 fet GaAs FET sot89 FET SOT89 ANCLC2R45J100AAA
    Text: MICROWAVE PRODUCTS m u ffa ta GaAs FET/Antenna •Small Signal FET XMFS Series Parts Number j XMFS2-M1 Package Main Characteristics Application Plastic F m in= 0.4 dB @ 2G H zi Gas— ^ d B DBS Oscillator LNA (PCS. PDC, PHS F m in= 0.4 dB (@2GHz) G as=15dB


    OCR Scan     		PDF T-143) OT-89) Po--23dBm LDA36A1907A ANACLC1R90J025AAA R89J020AAa ANACGC1R48U024AAC AS15D sot89 fet GaAs FET sot89 FET SOT89 ANCLC2R45J100AAA

    .a h marking

    Abstract: marking A S220M
    Text: OTHER PRODUCTS G aA s f ie ld e f f e c t t r a n s is t o r s POWER FET'S m t t f ì n t a in E U c fy c n ta XMFP Series FEATURES • High power output ■ Excellent linear power gain APPLICATIONS ■ C-band power amps up to 6G H z ■ W ireless telecommunication base stations G SM , DCS,


    OCR Scan     		PDF 26dBm 30dBm 35dBm 0-35-E, .a h marking marking A S220M